Synthesis · Thin film thermoelectric metal-organic framework with high seebeck coefficient and low thermal conductivity

3 structured synthesis routes

Completeness describes how fully the route could be reconstructed from the main article and supporting information.

Partial recipeSource: Main

Route 1: Other

main p.6, article p.3458 · Growth and Characterization of MOF Thin Films

Metal precursorsNot specified in this paper; Cu3(BTC)2 liquid-phase layer-by-layer film growth cited to a previously described procedure.

Linker precursorsNot specified in this paper; BTC linker implied by Cu3(BTC)2.

SolventsLiquid phase; solvent not specified for framework growth in this paper.

AtmosphereVacuum only specified for activation, about 10^-6 Torr.

Temperatureroom temperature deposition described generally; activation at 180 deg C

Timeactivation 1 h; growth time not specified

Substrate orientationFused quartz substrate with prepatterned Au pads; no crystal orientation specified for substrate.

Work-upNot specified for growth; residual solvent and precursors removed by heating before infiltration.

ActivationHeated at 180 deg C in vacuum (about 10^-6 Torr) for 1 h before TCNQ infiltration.

Scalability contextAutomated layer-by-layer approach; grain size varies from tens of nanometres to about 1 um depending on film thickness and growth conditions.

Show 3 structured reagent records

Role	Reagent	Amount / concentration	Source
Metal Source	Cu source not specified in this paper	Not specified	main p.6, article p.3458 · Growth and Characterization of MOF Thin Films
Linker	BTC linker implied; exact reagent not specified in this paper	Not specified	main p.6, article p.3458 · Growth and Characterization of MOF Thin Films
Other	fused quartz substrate with prepatterned Au pads	19 x 19 mm2, 0.55 mm thick; Au pads 200 x 500 um	main p.6, article p.3458 · Growth and Characterization of MOF Thin Films

Vague recipeSource: Main

Route 2: Other

main p.6, article p.3458 · Thermal Conductivity Measurements · Figure 4

Metal precursorsPreformed Cu3(BTC)2 film; detailed Cu source not specified.

Linker precursorsBTC framework linker and TCNQ guest molecule; detailed framework-growth reagent names not specified.

SolventsTCNQ infiltration solvent inferred from similar method as methanol; growth solvent not specified.

Substrate orientationp-Si wafer coated with 100 nm thermal oxide; patterned Au pads for conductivity measurements.

Oxidant / reductantTCNQ redox-active guest molecule

Work-up200 nm thick, 0.75 mm diameter Al dots deposited on top for TDTR measurements.

Show 2 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	p-Si wafer coated with 100 nm thermal oxide	Not specified	main p.6, article p.3458 · Thermal Conductivity Measurements · Figure 4
Other	Al TDTR transducer dots	200 nm thick, 0.75 mm diameter	main p.6, article p.3458 · Thermal Conductivity Measurements · Figure 4

Partial recipeSource: Main

Route 3: Other

main p.6, article p.3458 · Growth and Characterization of MOF Thin Films · Figure 1

Metal precursorsPreformed Cu3(BTC)2 thin film.

Linker precursorsTCNQ guest molecule; BTC already present in framework.

SolventsMethanol

AtmosphereN2 stream used for drying; infiltration atmosphere not specified.

Temperatureroom temperature

Timeabout 24 h infiltration

Substrate orientationDevice held vertically in a glass bottle by side ridges; roughly lower half immersed in TCNQ/methanol.

Oxidant / reductantTCNQ redox-active guest molecule

Work-upRemoved after about 24 h, rinsed with methanol, dried under a stream of N2.

ActivationImmediately before infiltration, residual solvent and precursors were removed by heating at 180 deg C in vacuum (about 10^-6 Torr) for 1 h.

Scalability contextPartial immersion creates infiltrated, transition and uninfiltrated regions in the same device.

Show 3 structured reagent records

Role	Reagent	Amount / concentration	Source
Other	preformed activated Cu3(BTC)2 thin film	200 nm nominal film on quartz	main p.6, article p.3458 · Growth and Characterization of MOF Thin Films · Figure 1
Oxidant	TCNQ (tetracyanoquinodimethane)	saturated solution in methanol	main p.6, article p.3458 · Growth and Characterization of MOF Thin Films · Figure 1
Solvent	methanol	Not specified	main p.6, article p.3458 · Growth and Characterization of MOF Thin Films · Figure 1