Reported material

In10-doped Spiro-OMeTAD hole transport layer

This group combines only harmless case, dash and spacing variants of the reported identity. It does not assert a broader chemical equivalence without source review.

1primary papers
1material records
6linked samples
15linked measurements
32linked results
2019–2019publication span

Evidence coverage

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Primary papers

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1 papers

Per-paper identity records

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Show 1 material identity record
Paper and reported nameFormula and componentsStructure contextSource
In10-doped Spiro-OMeTAD hole transport layer2019 · Metal organic framework doped Spiro-OMeTAD with increased conductivity for improving perovskite solar cell performanceSpiro-OMeTAD/TBP/Li-TFSI with 2, 4 or 6 mg mL-1 In10In(III) and K(I) nodes in dispersed In10 MOF component · quinoline-3-dicarboxylate in In10 plus molecular Spiro-OMeTAD matrixunknown · CompositeComposite hole-transport layer; In10 addition oxidises Spiro-OMeTAD and changes conductivity, optical response and morphology.2 · 2.2. Device fabrication