Electrical Transport — Single Crystals of Electrically Conductive Two-Dimensional Metal-Organic Frameworks: Structural and Electrical Transport Properties

6 measurement groups · 21 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Room-temperature current-voltage measurements.

Electrical conductivity

Exfoliated Cu3(HHTP)2 flakes · Nanosheet

Exfoliated Cu3(HHTP)2 flake devices measured at 295 K; SI table lists two flake devices.

Temperature: 295
Geometry: SEM-measured channel width, height and length.
Context: Pristine exfoliated Cu3(HHTP)2 flake transport.
Measurement source: main p.3, article p.1961 · Results and Discussion · Figure 3c; SI Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(HHTP)2 Flake 1 conductivityMarked as a best value within this paper	Flake 1 conductivity = 0.57 S/cm	—	—	SI Table Rounded Reported	SI p.11 · Supplementary Figure 7 · SI Figure 7 table
Cu3(HHTP)2 Flake 2 conductivity	Flake 2 conductivity = 0.52 S/cm	—	—	SI Table Rounded Reported	SI p.11 · Supplementary Figure 7 · SI Figure 7 table

Pellet conductivity measurement.

Electrical conductivity

Cu3(HHTP)2 pellets from rod and particle batches · Pellet

Pellet conductivities reported for the Cu3(HHTP)2 particle batch used to exfoliate flakes and for the rod batch.

Geometry: Pellet; detailed geometry not reported in assigned text.
Context: Pristine polycrystalline Cu3(HHTP)2 batch comparison.
Measurement source: main p.3, article p.1961 · Results and Discussion · Figure 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(HHTP)2 particle-batch pellet conductivity	Pellet conductivity = 0.1 S/cm for particle batch used to exfoliate flakes	—	—	Text Rounded Reported	main p.3, article p.1961 · Results and Discussion · Figure 3
Cu3(HHTP)2 rod-batch pellet conductivity	Pellet conductivity = 0.09 S/cm for rod batch	—	—	Text Rounded Reported	main p.3, article p.1961 · Results and Discussion · Figure 3

Room-temperature current-voltage measurements.

Electrical conductivity

Cu3(HHTP)2 rods · Single Crystal

Cu3(HHTP)2 rod devices measured at 295 K; SI table lists three rod devices.

Temperature: 295
Geometry: SEM-measured channel dimensions; rods treated as approximately circular cross sections.
Context: Pristine Cu3(HHTP)2 rod transport.
Measurement source: main p.3, article p.1961 · Results and Discussion · Figure 3c; SI Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(HHTP)2 Rod 1 conductivity	Rod 1 conductivity = 1.5 S/cm	—	—	SI Table Rounded Reported	SI p.11 · Supplementary Figure 7 · SI Figure 7 table
Cu3(HHTP)2 Rod 2 conductivityMarked as a best value within this paper	Rod 2 conductivity = 1.93 S/cm	—	—	SI Table Rounded Reported	SI p.11 · Supplementary Figure 7 · SI Figure 7 table
Cu3(HHTP)2 Rod 3 conductivity	Rod 3 conductivity = 0.64 S/cm	—	—	SI Table Rounded Reported	SI p.11 · Supplementary Figure 7 · SI Figure 7 table
Cu3(HHTP)2 multi-device lower-limit conductivity	Over 10 single rod devices put a lower limit at ~0.1 S/cm.	—	—	Text Approximate	main p.3, article p.1961 · Results and Discussion · Figure 3

Four-probe variable-temperature conductance and Zabrodskii analysis.

Electrical conductivity

Polycrystalline Ni3(HITP)2 film device · Thin Film

Polycrystalline Ni3(HITP)2 film measured as comparison to single rods.

Geometry: Four-probe film device; detailed geometry not reported in assigned text.
Context: Pristine polycrystalline comparison.
Measurement source: main p.2-3, article pp.1960-1961 · Results and Discussion · Figure 2d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Polycrystalline Ni3(HITP)2 film Zabrodskii slope	Negative Zabrodskii slope; conductance approaches 0 as T goes to 0 K.	—	—	Text Qualitative	main p.3, article p.1961 · Results and Discussion · Figure 2d

Two-probe and four-probe DC current-voltage sweeps plus AC variable-temperature conductance.

Electrical conductivity

Single-rod Ni3(HITP)2 electrical devices · Single Crystal

Representative single Ni3(HITP)2 rod device measured at 295 K and 1.4 K; VT conductance extended from 295 K down to 0.3 K; additional Ni rod devices shown in SI Figure 2.

Temperature: 0.3-295
Geometry: Single rod on Si/SiO2 with Ti/Pd contacts; representative four-probe channel L23 = 164 nm and D23 = 188 nm.
Context: Pristine single-crystal rod transport.
Measurement source: main p.2, article p.1960 · Results and Discussion · Figure 2a-c; SI Figures 2 and 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ni3(HITP)2 representative single-rod two-probe conductance at 1.4 K	G = 0.13 mS at 1.4 K	—	—	Text Rounded Reported	main p.2, article p.1960 · Results and Discussion · Figure 2b
Ni3(HITP)2 representative single-rod four-probe conductance at 1.4 K	G = 0.7 mS at 1.4 K	—	—	Text Rounded Reported	main p.2, article p.1960 · Results and Discussion · Figure 2b-c
Ni3(HITP)2 representative single-rod two-probe conductance at 295 K	G = 0.25 mS at 295 K	—	—	Text Rounded Reported	main p.2, article p.1960 · Results and Discussion · Figure 2b
Ni3(HITP)2 representative single-rod four-probe conductance at 295 K	G = 1.3 mS at 295 K	—	—	Text Rounded Reported	main p.2, article p.1960 · Results and Discussion · Figure 2b
Ni3(HITP)2 representative single-rod two-probe conductivity	sigma = 40 S/cm for R14 = 8.6 kOhm and L14 = 955 nm	—	—	Text Rounded Reported	SI p.8 · Supplementary Figure 4 · SI Figure 4
Ni3(HITP)2 representative single-rod four-probe conductivity	sigma = 142 S/cm for R23 = 415 Ohm, L23 = 164 nm and D23 = 188 nm	—	—	Text Rounded Reported	SI p.5 and p.8 · Device Discussion; Supplementary Figure 4 · SI Figure 4
Additional Ni3(HITP)2 device conductivity	102 S/cm	—	—	Text Rounded Reported	SI p.5 · Device Discussion
Additional Ni3(HITP)2 device conductivity	104 S/cm	—	—	Text Rounded Reported	SI p.5 · Device Discussion
Additional Ni3(HITP)2 device conductivityMarked as a best value within this paper	148 S/cm	—	—	Text Rounded Reported	SI p.5 · Device Discussion
Additional Ni3(HITP)2 device conductivity	95 S/cm	—	—	Text Rounded Reported	SI p.5 · Device Discussion
Ni3(HITP)2 single-rod Zabrodskii slope	Positive slope for all single rod devices.	—	—	Text Qualitative	main p.3, article p.1961 · Results and Discussion · Figure 2c; SI Figure 2

Magnetic-field-dependent conductance / normalised magnetoresistance.

Single-rod Ni3(HITP)2 electrical devices · Single Crystal

Magnetoresistance measured at fixed temperatures from 1.4 K to 10 K.

Temperature: 1.4-10
Geometry: Single rod device; authors note possible mixing of Hall and longitudinal resistance.
Context: Pristine single-crystal rod transport.
Measurement source: main p.2, article p.1960 · Results and Discussion · Figure 2b inset

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ni3(HITP)2 magnetoresistance sign and temperature trend	Reversible positive magnetoresistance, enhanced at low temperature and decreasing from 1.4 K to 10 K.	—	—	Text Qualitative	main p.2, article p.1960 · Results and Discussion · Figure 2b inset