Electrical Transport — Boosting the Optoelectronic Performance by Regulating Exciton Behaviors in a Porous Semiconductive Metal-Organic Framework

7 measurement groups · 7 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

I-V measurement under dark and X-ray irradiation

Electrical conductivity

mechanical mixture pelleted wafer detector · Pellet

Dark and 17.5 mGyair/s X-ray irradiation; Ag/sample/Ag detector.

Atmosphere: electromagnetic shielding loading platform
Geometry: Ag/mechanical-mixture/Ag sandwich pellet detector
Context: Physical-mixture control detector.
Measurement source: p016 / SI S14 · Supplementary figures · Figure S25

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source

I-V measurement under X-ray dose rates

Electrical conductivity

RhB+@TbTATAB pelleted wafer detector · Pellet

Tungsten anode radiation device; tube voltage/current 30-160 kV and 2-25 mA; dose-rate calibrated 0.883-17.52 mGyair s-1; current recorded by Keithley 6517B.

Atmosphere: electromagnetic shielding loading platform; air ionization minimized
Geometry: Ag/RhB+@TbTATAB/Ag sandwich pellet detector; 10 V bias used for on/off ratio
Context: Target detector compared with parent and mechanical mixture.
Measurement source: p005 / article p2193 · Modified Photoconductivity and X-ray Photoelectric Performance · Figures S23-S25

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ohmic contact from linear I-V	linear I-V dependence under different X-ray dose rates	—	—	Text Qualitative	p005 / article p2193 · Modified Photoconductivity and X-ray Photoelectric Performance · Figures S23-S25
Average sample temperature before X-ray irradiation	22.2 degC	295.35 K	—	Text Exact Reported	p006 / article p2194 · Modified Photoconductivity and X-ray Photoelectric Performance
Average sample temperature during X-ray irradiation	22.6 degC	295.75 K	—	Text Exact Reported	p006 / article p2194 · Modified Photoconductivity and X-ray Photoelectric Performance

I-V measurement under dark and X-ray irradiation

Electrical conductivity

TbTATAB pelleted wafer detector · Pellet

Dark and 17.5 mGyair/s X-ray irradiation; Ag/sample/Ag detector.

Atmosphere: electromagnetic shielding loading platform
Geometry: Ag/TbTATAB/Ag sandwich pellet detector
Context: Pristine parent detector control.
Measurement source: p015 / SI S13 · Supplementary figures · Figure S24

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source

Mobility-lifetime product from bias-dependent photoconductivity curve using modified Hecht equation

RhB+@TbTATAB pelleted wafer detector · Pellet

Bias-dependent photocurrent curve; material thickness L and applied bias V used in modified Hecht equation.

Geometry: pellet X-ray detector
Context: Target guest-loaded detector.
Measurement source: p006 / article p2194 · Modified Photoconductivity and X-ray Photoelectric Performance · Figure 5b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Mobility-lifetime product of RhB+@TbTATAB detectorMarked as a best value within this paper	1.12 x 10-3 cm2 V-1	—	—	Text Exact Reported	p006 / article p2194 · Modified Photoconductivity and X-ray Photoelectric Performance · Figure 5b

Mobility-lifetime product from bias-dependent photoconductivity curve using modified Hecht equation

TbTATAB pelleted wafer detector · Pellet

Bias-dependent photocurrent curve; pristine detector.

Geometry: pellet X-ray detector
Context: Pristine parent detector control.
Measurement source: p006 / article p2194 · Modified Photoconductivity and X-ray Photoelectric Performance · Figure 5b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Mobility-lifetime product of TbTATAB detector	3.21 x 10-4 cm2 V-1	—	—	Text Exact Reported	p006 / article p2194 · Modified Photoconductivity and X-ray Photoelectric Performance · Figure 5b

Temperature-dependent resistivity

RhB+@TbTATAB pelleted wafer detector · Pellet

20-40 degC; plotted as resistivity in 10^11 ohm cm.

Temperature: 293-313
Geometry: pellet detector
Context: Target guest-loaded detector.
Measurement source: p016 / SI S14 · Supplementary figures · Figure S26

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Approximate resistivity range of RhB+@TbTATAB from 20-40 degC	about 6.6-7.7 x 10^11 ohm cm over 20-40 degC	—	visual range approximately 6.6 to 7.7 in plotted 10^11 ohm cm units	Figure Axis Approximate	p016 / SI S14 · Supplementary figures · Figure S26

Temperature-dependent resistivity

TbTATAB pelleted wafer detector · Pellet

20-40 degC; plotted as resistivity in 10^9 ohm cm.

Temperature: 293-313
Geometry: pellet detector
Context: Pristine parent detector control.
Measurement source: p016 / SI S14 · Supplementary figures · Figure S27

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Approximate resistivity range of TbTATAB from 20-40 degC	about 3.2-3.8 x 10^9 ohm cm over 20-40 degC	—	visual range approximately 3.2 to 3.8 in plotted 10^9 ohm cm units	Figure Axis Approximate	p016 / SI S14 · Supplementary figures · Figure S27