Porosity — Boosting the Optoelectronic Performance by Regulating Exciton Behaviors in a Porous Semiconductive Metal-Organic Framework

Measurement evidence

Porosity

Boosting the Optoelectronic Performance by Regulating Exciton Behaviors in a Porous Semiconductive Metal-Organic Framework · Liang C., Cheng L., Zhang S. et al. · Journal of the American Chemical Society · 2022 · 2189-2196

1 measurement group · 2 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

N2 sorption isotherm; BET and Langmuir surface area

Gas sorption and porosity

as-synthesised TbTATAB powder/crystals · Powder

N2 sorption at 77 K.

Temperature: 77
Atmosphere: N2
Context: Pristine parent framework.
Measurement source: p008 / SI S6 · Supplementary figures · Figure S5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
BET surface areaMarked as a best value within this paper	663.4 cm2/g	—	—	Caption Exact Reported	p008 / SI S6 · Supplementary figures · Figure S5
Langmuir surface area	670.4 cm2/g	—	—	Caption Exact Reported	p008 / SI S6 · Supplementary figures · Figure S5