cMOF Evidence Base
Electrical Transport — Two-dimensional d-π conjugated metal-organic framework based on hexahydroxytrinaphthylene

Measurement evidence

Electrical Transport

Two-dimensional d-π conjugated metal-organic framework based on hexahydroxytrinaphthylene · Meng Z., Mirica K.A. · Nano Research · 2021 · 369-375

2 measurement groups · 11 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Two-contact bulk conductivity on pressed pellet

Electrical conductivity

pressed Cu3(HHTN)2 pellet · Pellet

Pressed pellet measured from 298 to 385 K under constant 4.0 V bias; conductivity calculated using sigma = I L/(V A).

Temperature
298-385
Geometry
6 mm pellet; L=0.091 cm; two-contact probe
Context
pristine target framework
Measurement source
14-15 · S10 Measurement of Conductivity · Fig. S25-S27
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
activation energy, low-temperature zone I827 meV0.827 eV—Text
Exact Reported		4 · 2.5 Electronic properties and tunability · Fig. 4c, Fig. S27
bulk conductivity at 385 KMarked as a best value within this paper9.01 x 10^-8 S cm^-1 at 385 K——Text
Exact Reported		4 · 2.5 Electronic properties and tunability · Fig. 4b
thermal conductivity increase factor from 298 to 385 K94-fold increase within DeltaT of 87 K——Text
Exact Reported		4 · 2.5 Electronic properties and tunability · Fig. 4b
bulk conductivity at room temperature9.55 x 10^-10 S cm^-1 at room temperature——Text
Exact Reported		4 · 2.5 Electronic properties and tunability · Fig. 4b
constant voltage for pellet conductivity4.0 V——Text
Exact Reported		14 · S10 Measurement of Conductivity · Fig. S25
thermal band gap, low-temperature zone I1.65 eV at 298-319 K——Text
Exact Reported		4 · 2.5 Electronic properties and tunability · Fig. 4c, Fig. S27
thermal band gap, high-temperature zone IIMarked as a best value within this paper0.75 eV at 324-385 K——Text
Exact Reported		4 · 2.5 Electronic properties and tunability · Fig. 4c, Fig. S27

Chemiresistive current/conductance response under iodine vapour

Cu3(HHTN)2 drop-cast resistor device · Thin Film

Drop-cast Cu3(HHTN)2 device exposed to approximately 400 ppm I2 at room temperature under 4.0 V bias; recovery under N2.

Temperature
room temperature
Atmosphere
I2 about 400 ppm, then N2
Geometry
interdigitated Au electrodes, 5 um gap in main text; Metrohm G-IDEAU5 device in SI
Context
pristine framework oxidatively doped in device
Measurement source
5 · 2.5 Electronic properties and tunability · Fig. 4d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
iodine vapour concentration~400 ppm—~Text
Approximate		18 · S11 I2 Doping Study of Cu3(HHTN)2 · Fig. S33
current increase after iodine exposureMarked as a best value within this paper360-fold increase——Text
Exact Reported		18 · S11 I2 Doping Study of Cu3(HHTN)2 · Fig. S33
conductance increase after iodine exposureMarked as a best value within this paper36,000% after about 30 min I2 exposure360 foldabout 30 minText
Exact Reported		5 · 2.5 Electronic properties and tunability · Fig. 4d
current after iodine stream off and N2 recovery157-fold of initial value——Text
Exact Reported		18 · S11 I2 Doping Study of Cu3(HHTN)2 · Fig. S33