Hall-effect measurement.
HHB-Cu nanosheets · Nanosheet
Magnetic field perpendicular to sample plane swept from -4 T to 4 T at 300 K.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Charge carrier mobilityMarked as a best value within this paper | 2.4 +/- 0.3 cm2 V^-1 s^-1 | — | +/- 0.3 cm2 V^-1 s^-1 | Text Exact Reported | main p.4 · Results and discussion · Fig. S17 |
| Carrier type | p-type semiconducting behaviour | — | — | Text Qualitative | main p.4 · Results and discussion · Fig. S17 |
| Hole concentrationMarked as a best value within this paper | ~1.4 x 10^14 cm^-3 | — | — | Text Approximate | main p.4 · Results and discussion · Fig. S17 |