Electrical Transport — Conductive Stimuli-Responsive Coordination Network Linked with Bismuth for Chemiresistive Gas Sensing

5 measurement groups · 8 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Bi(HHTP) temperature-dependent I-V pellet · Pellet

Linear sweep -2.0 to +2.0 V from 293 to 383 K; ln(I) versus 1/T

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Arrhenius activation energyMarked as a best value within this paper	425 meV	—	—	Text Exact Reported	S22 · Arrhenius Activation Energy · Figure S24
temperature-dependent I-V behaviour	Ohmic response between +2 and -2 V	—	—	Caption Qualitative	S22 · Arrhenius Activation Energy · Figure S24

Bi(HHTP) four-point-probe pressed pellet · Pellet

0.100 g Bi(HHTP) powder compressed into 6 mm pellet; probe spacing 1.25 mm; correction factor F used in eq S2

Atmosphere: ambient
Geometry: 6 mm pellet; 0.41 mm SI thickness
Context: pristine
Measurement source: S21 · Conductivity measurements on pressed pellets · Equation S2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
bulk conductivityMarked as a best value within this paper	5.3 x 10^-3 S cm^-1	—	—	Text Exact Reported	60311 · Electronic Properties

Bi(HHTP) chemiresistor on 10 um gap gold electrodes · Electrode

Bi(HHTP) suspension drop-cast on 10 um gap interdigitated electrodes and dried before sensing

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
device resistance from main textMarked as a best value within this paper	~30 MΩ range	—	—	Text Approximate	60311 · Chemiresistive Gas Sensing
device resistance from SI text	1.50 + 1.0 kΩs (as extracted text)	—	+ 1.0 kΩ	Text Uncertain	S34 · Fabrication of sensing devices · Figure S33

Bi(HHTP) chemiresistor on 10 um gap gold electrodes · Electrode

Voltage swept -1.0 to +1.0 V at 0.1 V/s; scans 3-5 exposed to 1000 ppm EtOH at 35 C

Temperature: 308
Atmosphere: 1000 ppm EtOH in N2
Geometry: 10 um gap electrode device
Context: pristine
Measurement source: S38 · I-V Curves Plots with Exposure to Ethanol · Figure S39

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
EtOH-exposed I-V contact behaviour	Ohmic contacts after saturation; no Schottky barrier modulation	—	—	Text Qualitative	S38 · I-V Curves Plots with Exposure to Ethanol · Figure S39

HHTP precursor control · Powder

HHTP and Bi(OAc)3 precursor pellets; Extech EX430 maximum resistance limit 40 Mohm

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Bi(OAc)3 precursor conductivity	no measurable conductivity; resistance limit 40 Mohm	—	—	Text Qualitative	60311 · Electronic Properties
HHTP precursor conductivity	no measurable conductivity; resistance limit 40 Mohm	—	—	Text Qualitative	60311 · Electronic Properties