Electrical Transport — Cation dependent charge transport in linear dicarboxylate based isotypical 1D coordination polymers

4 measurement groups · 27 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

two-probe current-voltage measurement using Keithley 2400

Electrical conductivity

Device-a, Al/compound 1/ITO · Thin Film

Bias from -6 V to +6 V at room temperature, dark and illumination.

Temperature: room temperature
Geometry: Al/compound 1/ITO Schottky diode; film thickness ca. 10 um; Al electrode area 7.065 x 10^-6 m2
Context: pristine compound 1 device
Measurement source: 2 · Electrical characterization · Fig. 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
electrical conductivity under darkMarked as a best value within this paper	1.53 x 10^-7 S cm^-1	0.0000153 S m-1	—	Text Rounded Reported	4 · Electrical characterization · Fig. 4
electrical conductivity under illuminationMarked as a best value within this paper	3.04 x 10^-7 S cm^-1	0.0000304 S m-1	—	Text Rounded Reported	4 · Electrical characterization · Fig. 4
photosensitivityMarked as a best value within this paper	1.99	—	—	Text Rounded Reported	4 · Electrical characterization · Fig. 4
compound 1 conductivity enhancement over compound 2Marked as a best value within this paper	2.55 times greater	—	—	Text Rounded Reported	1 · Abstract

two-probe current-voltage measurement using Keithley 2400

Electrical conductivity

Device-b, Al/compound 2/ITO · Thin Film

Bias from -6 V to +6 V at room temperature, dark and illumination.

Temperature: room temperature
Geometry: Al/compound 2/ITO Schottky diode; film thickness ca. 10 um; Al electrode area 7.065 x 10^-6 m2
Context: pristine compound 2 device
Measurement source: 2 · Electrical characterization · Fig. 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
electrical conductivity under dark	5.90 x 10^-8 S cm^-1	0.0000059 S m-1	—	Text Rounded Reported	4 · Electrical characterization · Fig. 4
electrical conductivity under illumination	7.78 x 10^-8 S cm^-1	0.00000778 S m-1	—	Text Rounded Reported	4 · Electrical characterization · Fig. 4
photosensitivity	1.32	—	—	Text Rounded Reported	4 · Electrical characterization · Fig. 4

SCLC analysis from I-V and I-V2 plots; Mott-Gurney and den Boer methods

Electrical conductivity Space-charge-limited current analysis

Device-a, Al/compound 1/ITO · Thin Film

Forward-bias regions analysed from dark I-V; dielectric constant for compound 1 taken as 10.26.

Temperature: room temperature
Geometry: Al/compound 1/ITO; d ca. 10 um; area 7.065 x 10^-6 m2
Context: pristine compound 1 device
Measurement source: 5 · Electrical characterization · Fig. 5-Fig. 6; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
zero-bias barrier heightMarked as a best value within this paper	0.72 eV	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
carrier concentration near junctionMarked as a best value within this paper	10.45 x 10^19 m^-3	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
diffusion lengthMarked as a best value within this paper	1.116 um	0.000001116 m	—	Table Exact Reported	6 · Electrical characterization · Table 1
density of states near quasi-Fermi levelMarked as a best value within this paper	2.576 x 10^39 V^-1 m^-3	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
effective carrier mobilityMarked as a best value within this paper	9.15 x 10^-7 m2 V^-1 s^-1	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
mobility-lifetime productMarked as a best value within this paper	2.406 x 10^-11 m2 V^-1	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
SCLC conductivityMarked as a best value within this paper	3.885 x 10^-8 S cm^-1	0.000003885 S m-1	—	Table Exact Reported	6 · Electrical characterization · Table 1
transit timeMarked as a best value within this paper	2.63 x 10^-5 s	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
turn-on voltageMarked as a best value within this paper	0.9746 V	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
SCLC region-II slope range	1.92-1.94	—	—	Text Range	4 · Electrical characterization · Fig. 5
SCLC region-III slope range	3.17-3.78	—	—	Text Range	4 · Electrical characterization · Fig. 5

SCLC analysis from I-V and I-V2 plots; Mott-Gurney and den Boer methods

Electrical conductivity Space-charge-limited current analysis

Device-b, Al/compound 2/ITO · Thin Film

Forward-bias regions analysed from dark I-V; dielectric constant for compound 2 taken as 5.99.

Temperature: room temperature
Geometry: Al/compound 2/ITO; d ca. 10 um; area 7.065 x 10^-6 m2
Context: pristine compound 2 device
Measurement source: 5 · Electrical characterization · Fig. 5-Fig. 6; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
zero-bias barrier height	0.75 eV	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
carrier concentration near junction	6.78 x 10^19 m^-3	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
diffusion length	1.050 um	0.00000105 m	—	Table Exact Reported	6 · Electrical characterization · Table 1
density of states near quasi-Fermi level	3.525 x 10^39 V^-1 m^-3	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
effective carrier mobility	5.44 x 10^-7 m2 V^-1 s^-1	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
mobility-lifetime product	2.132 x 10^-11 m2 V^-1	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
SCLC conductivity	1.522 x 10^-8 S cm^-1	0.000001522 S m-1	—	Table Exact Reported	6 · Electrical characterization · Table 1
transit time	3.92 x 10^-5 s	—	—	Table Exact Reported	6 · Electrical characterization · Table 1
turn-on voltage	1.082 V	—	—	Table Exact Reported	6 · Electrical characterization · Table 1