Electrical Transport — Tunable electrical conductivity in metal-organic framework thin-film devices

7 measurement groups · 14 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

TCNQ-infiltrated Cu3(BTC)2 thin-film device · Thin Film

TCNQ-infiltrated devices with 100, 150 and 200 um electrode gaps

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Resistance at 100 um electrode gap	approximately 0.23 x 10^6 ohm	—	—	Figure Axis Approximate	2 · figure · Fig. 2B
Resistance at 150 um electrode gap	approximately 0.45 x 10^6 ohm	—	—	Figure Axis Approximate	2 · figure · Fig. 2B
Resistance at 200 um electrode gap	approximately 1.0 x 10^6 ohm	—	—	Figure Axis Approximate	2 · figure · Fig. 2B

TCNQ-infiltrated Cu3(BTC)2 thin-film device · Thin Film

Several devices monitored as TCNQ exposure time increased up to roughly 200 h

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Conductivity near 200 h exposure	approximately 0.1-0.2 S/m at 200 h in Fig. 2F	—	range across plotted devices	Figure Axis Range	2 · figure · Fig. 2F
Percolation fit for conductivity versus exposure time	sigma = 4 x 10^-6 (t - 0.5)^2	—	—	Caption Exact Reported	2 · caption · Fig. 2F

F4-TCNQ-infiltrated Cu3(BTC)2 thin-film device · Thin Film

Guest identity varied; F4-TCNQ measured immediately after infiltration; H4-TCNQ nonconjugated guest

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
F4-TCNQ@Cu3(BTC)2 current at 10 V	approximately 2e-9 A at 10 V from Fig. 2A	—	—	Figure Axis Approximate	2 · figure · Fig. 2A
H4-TCNQ@Cu3(BTC)2 I-V behaviour	essentially the same as uninfiltrated, nonconducting MOF	—	—	Text Qualitative	3 · main text · Fig. 2A

As-grown Cu3(BTC)2.xH2O thin-film device on Pt/SiO2 · Thin Film

As-grown hydrated Cu3(BTC)2 thin-film device measured in air

Atmosphere: air
Geometry: Pt pads 800 um by 400 um, 100 nm thick; gaps 100, 150 and 200 um; 100 nm MOF film
Context: pristine control
Measurement source: 1 · main text · Fig. 2A

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
As-grown Cu3(BTC)2 conductivity	~10^-6 S/m	—	—	Text Approximate	1 · main text · Fig. 2A

TCNQ-infiltrated Cu3(BTC)2 thin-film device · Thin Film

TCNQ-infiltrated devices after 72 h exposure to saturated TCNQ/CH2Cl2 solution

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Conductivity enhancement after TCNQ infiltration	six orders of magnitude greater than uninfiltrated device	—	—	Text Rounded Reported	2 · main text · Fig. 2A
TCNQ@Cu3(BTC)2 conductivity after 72 h exposureMarked as a best value within this paper	7 S/m	—	—	Text Rounded Reported	1 · main text · Fig. 2A

TCNQ-infiltrated Cu3(BTC)2 thin-film device · Thin Film

Several TCNQ-infiltrated devices tracked in ambient atmosphere

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ambient conductivity stability duration	at least 40 days	—	—	Text Rounded Reported	2 · main text · Fig. 2C
Approximate conductivity range during ambient stability test	approximately 3.5-9 S/m over 40 days across devices	—	range across several plotted devices	Figure Axis Range	2 · figure · Fig. 2C

TCNQ-infiltrated Cu3(BTC)2 thin-film device · Thin Film

Conductivity measured from about 125 K to 300 K; Arrhenius plot of sigma versus 1/T

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Thermal activation energy	Ea = 41 +/- 1 meV	—	+/- 1 meV	Text Exact Reported	2 · main text · Fig. 2E
Current at 300 K and 10 V	approximately 45 uA at 10 V	—	—	Figure Axis Approximate	2 · figure · Fig. 2D