Electrical Transport — Integration of a (–Cu–S–) n plane in a metal–organic framework affords high electrical conductivity

6 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Annealed compound 1 sample 1 · Single Crystal

Sample 1 annealed at 50 C for 24 h; conductivity followed during heating/cooling and over 18 h.

Atmosphere: vacuum/air stability context
Geometry: Single-crystal device, t = 645 nm
Context: pristine
Measurement source: 4 · Electrical conductivity measurement · Supplementary Fig. 13

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Conductivity at 50 C after annealing	7.747 S cm^-1	774.7 S m^-1	—	Text Exact Reported	4 · Electrical conductivity measurement · Supplementary Fig. 13
Conductivity after cooling to room temperature	7.508 S cm^-1	750.8 S m^-1	—	Text Exact Reported	4 · Electrical conductivity measurement · Supplementary Fig. 13
Conductivity after 50 C annealing	7.514 S cm^-1	751.4 S m^-1	—	Text Exact Reported	4 · Electrical conductivity measurement · Supplementary Fig. 13
Repetitive-run standard deviation	standard deviation 0.00065	—	0.00065	Caption Exact Reported	S-12 · Supplementary Figures · Supplementary Fig. 14

Compound 1 single-crystal device, sample 3 · Single Crystal

FIB-deposited Pt contacts on single-crystal device; I-V curve at 300 K.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivity, 1250 nm single crystal	1.81 S cm^-1	181 S m^-1	—	Text Exact Reported	3 · Electrical conductivity measurement · Fig. 3a

Compound 1 single-crystal device, sample 1 · Single Crystal

FIB-deposited Pt contacts on single-crystal device; I-V curve at 300 K.

Temperature: 300
Geometry: Four-probe single crystal, t = 645 nm
Context: pristine
Measurement source: 3-4 · Electrical conductivity measurement · Fig. 3a; Supplementary Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivity, 645 nm single crystalMarked as a best value within this paper	10.96 S cm^-1	1096 S m^-1	—	Text Exact Reported	3 · Electrical conductivity measurement · Fig. 3a; Supplementary Table 2

Compound 1 single-crystal device, sample 2 · Single Crystal

FIB-deposited Pt contacts on single-crystal device; I-V curve at 300 K.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Electrical conductivity, 957 nm single crystal	4.18 S cm^-1	418 S m^-1	—	Text Exact Reported	3 · Electrical conductivity measurement · Fig. 3a

Compound 1 single-crystal device, sample 1 · Single Crystal

LakeShore Cryotronics TTP4 cryogenic probe station; Keithley 4200-SCS; 110-300 K; 0.1 V reported in Fig. 3c.

Temperature: 110-300
Geometry: Single-crystal devices with FIB Pt contacts; result rows cover all three thickness samples.
Context: pristine
Measurement source: 3-6 · Electrical conductivity measurement; Methods · Fig. 3c,d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Activation energy, 1250 nm single crystal	9 meV	0.009 eV	—	Text Exact Reported	3 · Electrical conductivity measurement · Fig. 3d
Activation energy, 645 nm single crystalMarked as a best value within this paper	6 meV	0.006 eV	—	Text Exact Reported	3 · Electrical conductivity measurement · Fig. 3d; Supplementary Table 2
Activation energy, 957 nm single crystalMarked as a best value within this paper	6 meV	0.006 eV	—	Text Exact Reported	3 · Electrical conductivity measurement · Fig. 3d
Temperature dependence of conductivity	Conductivity increased with increasing temperature; semiconducting behaviour.	—	—	Text Qualitative	3 · Electrical conductivity measurement · Fig. 3c

Compound 1 single-crystal device, sample 1 · Single Crystal

Contact resistance calculated for MOF 1 sample 1 with thickness 645 nm.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Contact resistance	2550 ohm	—	—	Text Exact Reported	3 · Electrical conductivity measurement · Fig. 3b