Electrical Transport — Enhancement of Electrical Conductivity due to Structural Distortion from Linear to Nonlinear Dicarboxylato-Bridged Zn(II) 1D-Coordination Polymers

6 measurement groups · 22 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Two-probe direct current I-V conductivity measurement

Electrical conductivity

Compound 1 ITO/film/Ag two-probe conductivity sample · Thin Film

Spin-coated ITO/compound/silver two-probe sample; Keithley 2635B source meter; room temperature, open atmosphere.

Temperature: room temperature
Atmosphere: open atmosphere
Geometry: ITO-coated glass/compound film/silver electrodes; l=1 um; A=7.065e-6 m2
Context: pristine compound 1 thin film
Measurement source: p010-p011; SI pages S10-S11 · Two-probe direct current I-V conductivity measurement · Figure S8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
direct-current conductivity	1.08 x 10^-4 S m^-1	—	—	Text Rounded Reported	p011; SI page S11 · Conductivity measurement · Figure S8
direct-conductivity electrode area	7.065 x 10^-6 m2	—	—	Text Exact Reported	p011; SI page S11 · Conductivity measurement
direct-conductivity film thickness	1 um	—	—	Text Exact Reported	p011; SI page S11 · Conductivity measurement

Impedance spectroscopy; Nyquist and frequency-dependent ac conductivity

Electrical conductivity Impedance spectroscopy

Compound 1 ITO/compound/Al Schottky thin-film device · Thin Film

Agilent 4295A LCR impedance spectroscopy; main text states frequency range 40 Hz to 10 MHz at room temperature under dark conditions.

Temperature: room temperature
Atmosphere: dark conditions
Geometry: thin-film device on ITO-coated glass
Context: pristine compound 1 thin-film device
Measurement source: p008-p009; SI pages S8-S9 · Materials and physical method

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
dc conductivity from impedanceMarked as a best value within this paper	1.22 x 10^-4 S m^-1	—	—	Text Rounded Reported	p005; article page 2636 · Impedance Spectroscopy · Figure 5

Current-voltage measurement and Schottky barrier diode analysis

Electrical conductivity

Compound 1 ITO/compound/Al Schottky thin-film device · Thin Film

ITO/compound/Al Schottky device; Keithley 2635B source meter, -2 V to +2 V under dark room-temperature ambient conditions; thermionic-emission and SCLC analyses.

Temperature: room temperature
Atmosphere: dark conditions
Geometry: ITO-coated glass/compound film/Al; film thickness 1 um; effective diode area 7.065e-6 m2
Context: pristine compound 1 thin-film device
Measurement source: p009; SI page S9 · Fabrication of Schottky device

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier heightMarked as a best value within this paper	0.55 eV	—	—	Table Rounded Reported	p006-p007; article pages 2637-2638 · Electrical Characterization · Table 2
effective carrier mobilityMarked as a best value within this paper	8.16 x 10^-5 m2 V^-1 s^-1	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Figure 8; Table 2
density of states near quasi-Fermi levelMarked as a best value within this paper	9.30 x 10^21 V^-1 m^-3	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Table 2
forward current at +2 V from I-V plot	approximately 0.26 A at +2 V	—	—	Figure Axis Approximate	p005; article page 2636 · Electrical Characterization · Figure 6a
rectification ratio under dark conditionsMarked as a best value within this paper	59.41	—	—	Text Rounded Reported	p005; article page 2636 · Electrical Characterization · Figure 6
SCLC / SBD conductivityMarked as a best value within this paper	1.31 x 10^-2 S m^-1	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Table 2
carrier transit timeMarked as a best value within this paper	5.26 x 10^-9 s	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Table 2
Schottky-device effective diode area	7.065 x 10^-6 m2	—	—	Text Exact Reported	p009; SI page S9 · Fabrication of Schottky device
Schottky-device film thickness	1 um	—	—	Text Exact Reported	p009; SI page S9 · Fabrication of Schottky device

Two-probe direct current I-V conductivity measurement

Electrical conductivity

Compound 2 ITO/film/Ag two-probe conductivity sample · Thin Film

Spin-coated ITO/compound/silver two-probe sample; Keithley 2635B source meter; room temperature, open atmosphere.

Temperature: room temperature
Atmosphere: open atmosphere
Geometry: ITO-coated glass/compound film/silver electrodes; l=1 um; A=7.065e-6 m2
Context: pristine compound 2 thin film
Measurement source: p010-p011; SI pages S10-S11 · Two-probe direct current I-V conductivity measurement · Figure S8

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
direct-current conductivity	5.55 x 10^-6 S m^-1	—	—	Text Rounded Reported	p011; SI page S11 · Conductivity measurement · Figure S8

Impedance spectroscopy; Nyquist and frequency-dependent ac conductivity

Electrical conductivity Impedance spectroscopy

Compound 2 ITO/compound/Al Schottky thin-film device · Thin Film

Agilent 4295A LCR impedance spectroscopy; main text states frequency range 40 Hz to 10 MHz at room temperature under dark conditions.

Temperature: room temperature
Atmosphere: dark conditions
Geometry: thin-film device on ITO-coated glass
Context: pristine compound 2 thin-film device
Measurement source: p008-p009; SI pages S8-S9 · Materials and physical method

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
dc conductivity from impedance	3.24 x 10^-6 S m^-1	—	—	Text Rounded Reported	p005; article page 2636 · Impedance Spectroscopy · Figure 5

Current-voltage measurement and Schottky barrier diode analysis

Electrical conductivity

Compound 2 ITO/compound/Al Schottky thin-film device · Thin Film

ITO/compound/Al Schottky device; Keithley 2635B source meter, -2 V to +2 V under dark room-temperature ambient conditions; thermionic-emission and SCLC analyses.

Temperature: room temperature
Atmosphere: dark conditions
Geometry: ITO-coated glass/compound film/Al; film thickness 1 um; effective diode area 7.065e-6 m2
Context: pristine compound 2 thin-film device
Measurement source: p009; SI page S9 · Fabrication of Schottky device

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height	0.63 eV	—	—	Table Rounded Reported	p006-p007; article pages 2637-2638 · Electrical Characterization · Table 2
effective carrier mobility	2.15 x 10^-7 m2 V^-1 s^-1	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Figure 8; Table 2
density of states near quasi-Fermi level	10.79 x 10^21 V^-1 m^-3	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Table 2
forward current at +2 V from I-V plot	approximately 3.4 x 10^-4 A at +2 V	—	—	Figure Axis Approximate	p005; article page 2636 · Electrical Characterization · Figure 6b
rectification ratio under dark conditions	38.68	—	—	Text Rounded Reported	p005; article page 2636 · Electrical Characterization · Figure 6
SCLC / SBD conductivity	1.80 x 10^-5 S m^-1	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Table 2
carrier transit time	2.24 x 10^-6 s	—	—	Table Rounded Reported	p007; article page 2638 · Electrical Characterization · Table 2