Lee J.I., Kim M., Park K.C. et al. · Materials Chemistry and Physics · 2022 · 125661
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
The work supports MOF-OSC composite OTFT gas sensors as a route to high-responsivity and high-response-rate NO2 detection.
Caveat: Device stability, selectivity panel data beyond NH3, and raw calibration statistics are not available in the main text.
7 · 4. Conclusions · Linked to 3 structured results
PCN-222 nanocrystals act as NO2 analyte channels through the P3HT layer, increasing contact between NO2 and the buried OSC-dielectric channel region.
Caveat: Mechanistic interpretation is inferred from morphology, porosity, and device response rather than direct in situ transport mapping.
6 · 3. Results and discussion · Fig. 6 · Linked to 4 structured results
The synthesised dark-brown powder is PCN-222, supported by powder XRD matching the simulated PCN-222 pattern and characteristic diffraction peaks.
Caveat: No CIF or SI file was provided for independent structure verification.
4 · 3. Results and discussion · Fig. 2d · Linked to 5 structured results
A small amount of PCN-222 improves NO2 sensing, but loadings greater than 20 wt% reduce sensing ability because PCN-222 aggregation lowers accessible surface area and high carrier concentration reduces current modulation.
Caveat: Quantitative sensing summary values are visually estimated from Fig. 5c.
7 · 3. Results and discussion · Fig. 3; Fig. 5 · Linked to 4 structured results
PCN-222 improves P3HT OTFT charge transport, with mobility increasing as PCN-222 loading rises and reaching a reported 0.0054 cm2 V-1 s-1 at 100 wt%.
Caveat: Intermediate mobility values are figure-read estimates; only the 100 wt% mobility is text-reported.
5 · 3. Results and discussion · Fig. 4 · Linked to 9 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| P3HT films blended with comparison MOFs | Not specifiedHKUST-1, ZIF-8, ZIF-67, ZC@NC, and PCN-222 comparison set as labelled in Fig. 4a | unknown · CompositeComparison MOF/P3HT blends at 20 wt% used to show that PCN-222 uniquely enhanced field-effect mobility. | 5 · 3. Results and discussion · Fig. 4a |
| poly(3-hexylthiophene) (P3HT) | Not specified | unknown · Model SystemCommercial conjugated polymer semiconductor used as the pristine OTFT/gas-sensing control. | 2 · 2.2 Preparation of PCN-222/P3HT blend films and transistor-type gas sensors |
| Fe porous coordination network 222 (PCN-222)Browse family: PCN-222 / MOF-545 | Not specifiedZr6 cluster nodes with Fe(III) porphyrin centres · 5,10,15,20-tetrakis-(4-carboxyphenyl)-porphine-Fe(III) chloride (Fe-TCPP-Cl) | 3D · Pristine3D hemoglobin-like zirconium-porphyrin MOF; powder XRD matched the simulated PCN-222 pattern. | 2 · Introduction |
| PCN-222/P3HT blend filmBrowse family: PCN-222 / MOF-545 | Not specifiedPCN-222 Zr6/Fe-porphyrin component · Fe-TCPP-Cl within PCN-222; P3HT polymer matrix | 3D · CompositeComposite organic semiconductor/MOF thin film with PCN-222 nanocrystals embedded in P3HT. | 4 · 3. Results and discussion · Fig. 3 |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| P3HT blend films with comparison MOFs, 20 wt%research_0154__mat__mat_comparison_mof_p3ht_blends | Thin Film · Composite Sample · Composite | Prepared as comparison P3HT/MOF blends; individual route details absent from main text.HMDS-coated Si/SiO2 substrate · ~100 nm | 5 · 3. Results and discussion · Fig. 4a |
| PCN-222/P3HT blend film, 100 wt% PCN-222research_0154__mat__mat_pcn222_p3ht_blend | Thin Film · Composite Sample · Composite | Spin-coated PCN-222/P3HT blend film.HMDS-coated Si/SiO2 substrate · ~100 nm | 5 · 3. Results and discussion · Fig. 3a; Fig. 4d |
| PCN-222/P3HT blend film, 10 wt% PCN-222research_0154__mat__mat_pcn222_p3ht_blend | Thin Film · Target Sample · Composite | Spin-coated PCN-222/P3HT blend film.HMDS-coated Si/SiO2 substrate · ~100 nm | 6 · 3. Results and discussion · Fig. 5a,b |
| PCN-222/P3HT blend film, 20 wt% PCN-222research_0154__mat__mat_pcn222_p3ht_blend | Thin Film · Composite Sample · Composite | Spin-coated PCN-222/P3HT blend film.HMDS-coated Si/SiO2 substrate · ~100 nm | 5 · 3. Results and discussion · Fig. 4b,c; Fig. 5 |
| PCN-222/P3HT blend film, 30 wt% PCN-222research_0154__mat__mat_pcn222_p3ht_blend | Thin Film · Composite Sample · Composite | Spin-coated PCN-222/P3HT blend film.HMDS-coated Si/SiO2 substrate · ~100 nm | 5 · 3. Results and discussion · Fig. 4b,c; Fig. 5 |
| PCN-222/P3HT blend film, 50 wt% PCN-222research_0154__mat__mat_pcn222_p3ht_blend | Thin Film · Composite Sample · Composite | Spin-coated PCN-222/P3HT blend film.HMDS-coated Si/SiO2 substrate · ~100 nm | 5 · 3. Results and discussion · Fig. 3a |
| PCN-222/P3HT blend film seriesresearch_0154__mat__mat_pcn222_p3ht_blend | Thin Film · Composite Sample · Composite | PCN-222 added to P3HT solution, sonicated at 50 C, stirred at room temperature, and spin-coated.HMDS-coated Si/SiO2 substrate; highly n-doped Si gate; Au source/drain electrodes · ~100 nm | 4 · 3. Results and discussion · Fig. 3 |
| activated PCN-222 powderresearch_0154__mat__mat_pcn222 | Powder · Composite Component · Pristine Framework | Dark-brown powder washed with DMF and acetone and activated under dynamic vacuum at 120 C. | 2 · 2.1 Synthesis of PCN-222 |
| pristine P3HT OTFT filmresearch_0154__mat__mat_p3ht | Thin Film · Pristine Control · Model | P3HT solution spin-coated at 1500 rpm for 60 s on HMDS-coated Si/SiO2.HMDS-coated Si/SiO2 substrate; highly n-doped Si gate; Au source/drain electrodes · ~100 nm for P3HT film series | 2 · 2.2 Preparation of PCN-222/P3HT blend films and transistor-type gas sensors |