Electrical Transport — 2D Cd(II)-MOF of Pyridyl-Imidazoquinazoline: Structure, Luminescence, and Selective Detection of TNP and Fabrication of Semiconducting Devices

3 measurement groups · 32 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Capacitance-frequency dielectric constant and SCLC/Mott-Gurney carrier-transport analysis

Space-charge-limited current analysis

ITO/CP 1/Al metal-semiconductor thin-film device · Thin Film

Capacitance vs frequency in log scale at fixed bias; I vs V2 and high-voltage SCLC region used for mobility, transit time, diffusion coefficient and diffusion length.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/CP 1/Al thin film, thickness approximately 1 um
Context: pristine CP 1 thin-film device
Measurement source: p006-p007 / article pp.3143-3144 · Band Gap and Electrical Properties of a Schottky Device · Figures 11-12; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
relative dielectric constant	6.02 x 10^-2	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
diffusion coefficient (dark)	0.000311	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
diffusion coefficient (light)Marked as a best value within this paper	0.000996	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
diffusion length (dark)	1.24e-07 m	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
diffusion length (light)Marked as a best value within this paper	1.32e-07 m	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
effective carrier mobility (dark)	0.0121 m^2 V^-1 s^-1	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
effective carrier mobility (light)Marked as a best value within this paper	0.0386 m^2 V^-1 s^-1	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
mu_eff tau product (dark)	2.97e-13 m^2 V^-1	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
mu_eff tau product (light)	3.35e-13 m^2 V^-1	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
transit time (dark)	2.46e-11 s	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2
transit time (light)	8.69e-12 s	—	—	Table Exact Reported	p006 / article p.3143 · Band Gap and Electrical Properties · Table 2

Two-probe current-voltage measurement of ITO/CP 1/Al MS junction using Keithley 2635B SourceMeter

Electrical conductivity

ITO/CP 1/Al metal-semiconductor thin-film device · Thin Film

Room temperature, ambient conditions; dark and AM 1.5G photoirradiation/light measurements; forward/reverse bias around +/-2 V.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/CP 1/Al sandwich metal-semiconductor junction thin film
Context: pristine CP 1 thin-film device
Measurement source: p015 · Device Fabrication · Figures 7-10

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
barrier height (dark)	0.53 eV	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
barrier height (light)Marked as a best value within this paper	0.42 eV	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
electrical conductivity (dark)	1.12e-03 S m^-1	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
electrical conductivity (light)Marked as a best value within this paper	6.33e-03 S m^-1	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
ideality factor (dark)	2.89	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
ideality factor (light)Marked as a best value within this paper	2.12	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
current at +2 V in dark	about 0.14 A from Figure 7	—	—	Figure Axis Approximate	p005 / article p.3142 · Band Gap and Electrical Properties · Figure 7
current at +2 V under illumination	about 0.56 A from Figure 7	—	—	Figure Axis Approximate	p005 / article p.3142 · Band Gap and Electrical Properties · Figure 7
rectification/on-off ratio (dark)	55.15	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
rectification/on-off ratio (light)Marked as a best value within this paper	86.95	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
photosensitivity factorMarked as a best value within this paper	4.13	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
series resistance from dV/dln I (dark)	1428.68 ohm	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
series resistance from dV/dln I (light)Marked as a best value within this paper	771.45 ohm	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
series resistance from H(I) (dark)	1392.91 ohm	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
series resistance from H(I) (light)Marked as a best value within this paper	733.05 ohm	—	—	Table Exact Reported	p005 / article p.3142 · Band Gap and Electrical Properties · Table 1
transport regimes from log I vs log V	region I slope close to 1 (ohmic); region II slope close to 2 (space-charge-limited current)	—	—	Text Qualitative	p007 / article p.3144 · Band Gap and Electrical Properties · Figure 10

Photoresponse I-V measurements under varied light wavelength and intensity

Photoresponse and photoelectrochemistry Electrical conductivity

ITO/CP 1/Al metal-semiconductor thin-film device · Thin Film

310 nm UV and 700 nm visible light; intensity varied at 80, 100 (AM1.5G standard), and 120 mW cm^-2; calibrated photodiodes used at point of measurement.

Temperature: room temperature
Atmosphere: ambient
Geometry: ITO/CP 1/Al sandwich metal-semiconductor junction thin film
Context: pristine CP 1 thin-film device
Measurement source: p015-p016 · Electrical Property Analysis · Figure S16

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
reported conductivity at standard AM1.5G intensity 100 mW cm^-2Marked as a best value within this paper	7.64 x 10^-3 S m^-1	—	—	Text Rounded Reported	p016 · Electrical Property Analysis · Figure S16
reported conductivity at illumination intensity 120 mW cm^-2	6.33 x 10^-3 S m^-1	—	—	Text Rounded Reported	p016 · Electrical Property Analysis · Figure S16
conductivity under 310 nm illumination	2.81 x 10^-3 S m^-1	—	—	Text Rounded Reported	p015-p016 · Electrical Property Analysis · Figure S16
conductivity under 700 nm illuminationMarked as a best value within this paper	6.33 x 10^-3 S m^-1	—	—	Text Rounded Reported	p015-p016 · Electrical Property Analysis · Figure S16
reported conductivity at illumination intensity 80 mW cm^-2	2.81 x 10^-3 S m^-1	—	—	Text Rounded Reported	p016 · Electrical Property Analysis · Figure S16