cMOF Evidence Base
Electrical Transport — In Situ Oxidation of Pyridyl-Dihydrobenzoimidazoquinazoline and the Synthesis of a Highly Luminescent Cd(II) Coordination Polymer: A Promising Candidate for Mutagenic Nitroaromatic Detection and Device Fabrication

Measurement evidence

Electrical Transport

In Situ Oxidation of Pyridyl-Dihydrobenzoimidazoquinazoline and the Synthesis of a Highly Luminescent Cd(II) Coordination Polymer: A Promising Candidate for Mutagenic Nitroaromatic Detection and Device Fabrication · Bairy G., Das P., Dutta B. et al. · Inorganic Chemistry · 2023 · 12773-12782

2 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Two-probe current-density-voltage (J-V) measurement using Keithley 2635B; Cheung analysis of Schottky diode parameters

Electrical conductivity

Al/compound 1/ITO thin-film metal-semiconductor device · Thin Film

Room temperature (303 K), dark ambient condition; Al/compound/ITO metal-semiconductor device; effective area 7.065 x 10-6 m2; film thickness 1 micrometre.

Temperature
303
Atmosphere
ambient dark measurement
Geometry
Al/compound 1/ITO; metal-semiconductor junction
Context
pristine framework thin-film device
Measurement source
p021 / SI page 21 · Device Fabrication · Figures 7-8; Table 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Schottky barrier heightMarked as a best value within this paper0.693 eV——Table
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Table 1
electrical conductivityMarked as a best value within this paper1.10 x 10-5 S m-10.000011 S m-1—Table
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Table 1
effective diode area7.065 x 10-6 m20.000007065 m2—Text
Exact Reported		p020 / SI page 20 · Device Fabrication
device film thicknessone micrometre0.000001 m—Text
Rounded Reported		p020 / SI page 20 · Device Fabrication
Schottky ideality factor2.06——Table
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Table 1
approximate current density at +1 Vapproximately 70 A/m2 at +1 V from Figure 7a—visual estimateFigure Axis
Approximate		p006 / journal page 12778 · Figure 7 · Figure 7a
rectification ratio8.75——Table
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Table 1
series resistance from dV/dlnJMarked as a best value within this paper6.21 kOhm6210 Ohm—Table
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Table 1
series resistance from H(J)6.34 kOhm6340 Ohm—Table
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Table 1
lnJ-lnV region I slope1——Text
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Figure 8a
lnJ-lnV region II slope2——Text
Exact Reported		p007 / journal page 12779 · Electrical Characterization · Figure 8a

Tauc analysis from UV-vis absorption

UV-visible and optical absorption spectroscopy

Compound 1 suspension in acetonitrile · Unknown

Absorption spectrum from 250 to 500 nm in acetonitrile suspension; direct optical band gap derived using Tauc equation.

Temperature
298
Context
pristine
Measurement source
p006 / journal page 12778 · Electrical Characterization · Figure 6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
direct optical band gapMarked as a best value within this paper3.31 eV——Text
Exact Reported		p006 / journal page 12778 · Electrical Characterization · Figure 6b