Electrical Transport — Effect on Schottky behaviour of 1D coordination polymers by altering para-substituents on benzoate ligands

6 measurement groups · 28 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Capacitance-frequency measurement used to determine relative dielectric constant.

Al/compound 1/ITO Schottky diode · Thin Film

Capacitance decreases at low frequency and saturates at high frequency; saturated capacitance used in epsilon_r = Csat L/(epsilon0 A).

Temperature: room temperature
Geometry: Compound 1 film device; effective area 7.065 x 10^-6 m^2 and film thickness approximately 1 um from main text.
Context: pristine framework thin-film device
Measurement source: p003 · Supporting Information · Fig. S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
saturated high-frequency capacitanceMarked as a best value within this paper	approximately 4.3 x 10^-12 F from Fig. S4 plateau	—	visual estimate from plotted axis; plateau lies below the 1.0 x 10^-11 tick	Figure Axis Approximate	p003 · Supporting Information · Fig. S4

Two-probe current-voltage measurement using Keithley 2635B source meter; thermionic emission and Cheung analysis.

Electrical conductivity

Al/compound 1/ITO Schottky diode · Thin Film

Bias from -1 V to +1 V at room temperature under dark and light conditions; table values correspond to device Schottky analysis.

Temperature: room temperature
Geometry: Al/compound 1/ITO metal-semiconductor diode; active area 7.065 x 10^-6 m^2; film thickness approximately 1 um.
Context: pristine framework thin-film device
Measurement source: 13972-13975 · Electrical characterisation · Fig. 5; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier heightMarked as a best value within this paper	0.61 eV	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
conductivity repeated in SI comparison table	3.29 x 10^-4 S m^-1	0.000329 S m^-1	—	SI Table Exact Reported	p010 · Supporting Information · Table S7
low-voltage-region conductivityMarked as a best value within this paper	3.29 x 10^-4 S m^-1	0.000329 S m^-1	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
current density at +1 VMarked as a best value within this paper	approximately 1000 A m^-2 from Fig. 5a	—	visual estimate from plotted axis	Figure Axis Approximate	13974 · Electrical characterisation · Fig. 5a
ideality factor	1.58	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
series resistance from dV/dlnJMarked as a best value within this paper	242 ohm	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
series resistance from H(J)Marked as a best value within this paper	250 ohm	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1

SCLC analysis from ln J vs ln V and J vs V^2 plots using Mott-Gurney equation.

Space-charge-limited current analysis

Al/compound 1/ITO Schottky diode · Thin Film

Forward-bias regime; low-bias Ohmic and high-bias space-charge-limited regions analysed.

Temperature: room temperature
Geometry: Al/compound 1/ITO metal-semiconductor diode
Context: pristine framework thin-film device
Measurement source: 13975 · Electrical characterisation · Fig. 5d,e; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration in SCLC regionMarked as a best value within this paper	6.39 x 10^19 m^-3	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
carrier lifetime	7.5 x 10^-9 s	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
effective carrier mobilityMarked as a best value within this paper	1.32 x 10^-4 m^2 V^-1 s^-1	0.000132 m^2 V^-1 s^-1	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
mobility-lifetime productMarked as a best value within this paper	9.9 x 10^-13	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
relative dielectric constantMarked as a best value within this paper	0.69	—	—	Text Exact Reported	13975 · Electrical characterisation · Fig. S4
SCLC-region conductivityMarked as a best value within this paper	13.5 x 10^-4 S m^-1	0.00135 S m^-1	—	Table Exact Reported	13975 · Electrical characterisation · Table 2

Capacitance-frequency measurement used to determine relative dielectric constant.

Al/compound 2/ITO Schottky diode · Thin Film

Capacitance decreases at low frequency and saturates at high frequency; saturated capacitance used in epsilon_r = Csat L/(epsilon0 A).

Temperature: room temperature
Geometry: Compound 2 film device; effective area 7.065 x 10^-6 m^2 and film thickness approximately 1 um from main text.
Context: pristine framework thin-film device
Measurement source: p003 · Supporting Information · Fig. S4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
saturated high-frequency capacitance	approximately 2.63 x 10^-12 F from Fig. S4 plateau	—	visual estimate from plotted axis; plateau is near 2.6 x 10^-12 F	Figure Axis Approximate	p003 · Supporting Information · Fig. S4

Two-probe current-voltage measurement using Keithley 2635B source meter; thermionic emission and Cheung analysis.

Electrical conductivity

Al/compound 2/ITO Schottky diode · Thin Film

Bias from -1 V to +1 V at room temperature under dark and light conditions; table values correspond to device Schottky analysis.

Temperature: room temperature
Geometry: Al/compound 2/ITO metal-semiconductor diode; active area 7.065 x 10^-6 m^2; film thickness approximately 1 um.
Context: pristine framework thin-film device
Measurement source: 13972-13975 · Electrical characterisation · Fig. 5; Table 1

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height	0.63 eV	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
conductivity repeated in SI comparison table	2.22 x 10^-4 S m^-1	0.000222 S m^-1	—	SI Table Exact Reported	p010 · Supporting Information · Table S7
low-voltage-region conductivity	2.22 x 10^-4 S m^-1	0.000222 S m^-1	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
current density at +1 V	approximately 600 A m^-2 from Fig. 5a	—	visual estimate from plotted axis	Figure Axis Approximate	13974 · Electrical characterisation · Fig. 5a
ideality factorMarked as a best value within this paper	1.19	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
series resistance from dV/dlnJ	456 ohm	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1
series resistance from H(J)	430 ohm	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 1

SCLC analysis from ln J vs ln V and J vs V^2 plots using Mott-Gurney equation.

Space-charge-limited current analysis

Al/compound 2/ITO Schottky diode · Thin Film

Forward-bias regime; low-bias Ohmic and high-bias space-charge-limited regions analysed.

Temperature: room temperature
Geometry: Al/compound 2/ITO metal-semiconductor diode
Context: pristine framework thin-film device
Measurement source: 13975 · Electrical characterisation · Fig. 5d,e; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
carrier concentration in SCLC region	4.43 x 10^19 m^-3	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
carrier lifetimeMarked as a best value within this paper	7.8 x 10^-9 s	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
effective carrier mobility	1.2 x 10^-4 m^2 V^-1 s^-1	0.00012 m^2 V^-1 s^-1	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
mobility-lifetime product	9.36 x 10^-13	—	—	Table Exact Reported	13975 · Electrical characterisation · Table 2
relative dielectric constant	0.42	—	—	Text Exact Reported	13975 · Electrical characterisation · Fig. S4
SCLC-region conductivity	8.5 x 10^-4 S m^-1	0.00085 S m^-1	—	Table Exact Reported	13975 · Electrical characterisation · Table 2