Primary studyCore evidenceThin Film Device

Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1%

Ahn D.Y., Lee D.Y., Shin C.Y. et al. · ACS Applied Materials and Interfaces · 2017 · 12930-12935

4materials
10samples
4synthesis routes
18measurements
85results
7claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: High

For 2000 rpm TiO2-mp devices, 15 Co-DAPV LbL cycles is the optimum sensitisation condition, giving 2.10% efficiency and the smallest EIS charge-transport resistance.

Caveat: The authors report preliminary replica spread down to 1.80% and defer further device optimisation.

12932-12933 · Results · Table 1; Figure 4 · Linked to 4 structured results

Application RelevanceSupport assessment: Medium

The authors claim the first successful MOF-sensitizer based solid-state solar cell with meaningful output power conversion efficiency, exceeding previously reported MOF-sensitized liquid-junction devices.

Caveat: This is a literature-positioning claim based on the authors' Table S2 comparison, not independently revalidated here.

12933 · Results · Table S2 · Linked to 1 structured result

Application RelevanceSupport assessment: Medium

Unlike typical MOFs, Co-DAPV is synthesised from aqueous metal-ion and ligand precursor solutions and is described as completely stable against water.

Caveat: The paper states water stability qualitatively; no separate water-stability experiment is extracted.

12934 · Summary

Structure Property LinkSupport assessment: Medium

The TiO2/Co-DAPV heterojunction forms a favourable energy cascade: photoinduced electrons can be driven to FTO and holes to the Au electrode.

Caveat: Based on energy-level alignment and photovoltaic response, not on direct carrier-dynamics measurement.

12932 · Results · Figure 2 · Linked to 4 structured results

Structure Property LinkSupport assessment: Medium

Increasing the Co-DAPV sensitizer loading beyond the optimum increases film thickness and resistance, limiting charge transport between TiO2-mp and Co-DAPV.

Caveat: Film resistance is inferred from device trends and EIS; no direct thickness-resolved Co-DAPV resistivity table is given.

12933 · Results · Figure S6; Table 1 · Linked to 4 structured results

Transport MechanismSupport assessment: High

Co-DAPV is an intrinsically p-type conductive Co-based MOF film, with Hall-measured p-type behaviour and hole mobility of 0.017 cm2 V-1 s-1.

Caveat: The reported hole concentration unit appears malformed in the text/OCR and is preserved separately.

12930-12931 · Abstract and Results · Linked to 3 structured results

Transport MechanismSupport assessment: Medium

Illumination decreases Co-DAPV film resistivity from 28.62 to 0.24 ohm cm; the paper attributes photoconductivity to metal-to-ligand charge transfer involving Co-centre d-d transitions and electron transfer to DAPV.

Caveat: Mechanistic assignment is interpretive; no time-resolved charge-transfer measurement is reported here.

12931 · Results · Linked to 3 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
Co-DAPV cobalt viologen metal-organic frameworkNot specifiedCo(II) ions · di(3-diaminopropyl)-viologen dibromide (DAPV)unknown · PristineSingle-crystalline Co-based MOF; bulk powder and thin-film XRD patterns match and show a dominant 2theta peak at 10.86 degrees. The film morphology is large thin sheets.12930-12931 · Abstract and Results · Figure 1
glass substrate controlNot specifiedunknown · UnknownNon-conducting glass control used in two-point current-density plots.S-3 · Supporting Figure · Figure S1
iodine-induced hole-doped Co-NDC comparison filmNot specifiedCo-based MOF · NDC linker; exact identity not specified in this paperunknown · UnknownDoped comparative Co-MOF film from earlier work; described here as intrinsically insulating before iodine-induced hole doping.12931 · Results
TiO2/Co-DAPV solid-state photovoltaic stackFTO/TiO2-bl/TiO2-mp/Co-DAPV/AuCo(II) in Co-DAPV; Ti in TiO2 oxide layers · DAPV in Co-DAPVunknown · CompositeComposite photoanode/device stack with TiO2 blocking layer, mesoporous TiO2, Co-DAPV sensitizer, and evaporated Au electrode.12932 · Results · Figure 3

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 10 sample records
SampleForm and roleProcessing and geometrySource
bulk Co-DAPV powderresearch_0231__mat__mat_co_dapvPowder · Pristine Control · Pristine FrameworkHydrothermally prepared bulk MOF reference material.S-2 · Synthesis of bulk Co-DAPV
Co-DAPV thin film on glass, 8 LbL cyclesresearch_0231__mat__mat_co_dapvThin Film · Target Sample · Pristine FrameworkAqueous layer-by-layer deposited Co-DAPV film.glass substrate · approximately 140 nm in 8 LbL deposition cycles12931 · Results · Figure 1
Co-DAPV film on glassresearch_0231__mat__mat_co_dapvThin Film · Target Sample · Pristine FrameworkAqueous LbL Co-DAPV film grown on glass.amine-functionalised non-conducting glass · 30 LbL cycles in SI recipe; thickness varies by cycle count and is not specified for all transport plotsS-2 · Layer-by-layer (LbL) growth of Co-DAPV thin film
Co-DAPV film on ITO electroderesearch_0231__mat__mat_co_dapvElectrode · Target Sample · Pristine FrameworkLbL Co-DAPV film deposited on ITO for cyclic voltammetry.ITO glass electrodeS-5 · Figure S3 caption · Figure S3c
2000 rpm TiO2/Co-DAPV device series, 5-30 LbL cyclesresearch_0231__mat__mat_tio2_co_dapv_photoanodeElectrode · Composite Sample · CompositeMesoporous TiO2 film deposited at 2000 rpm and sensitized with Co-DAPV for 5, 10, 15, 20, or 30 LbL cycles.FTO glass with TiO2 blocking layer and Au top electrode · optimized device: about 50 nm TiO2 blocking layer, about 500 nm mesoporous TiO2 film, about 300 nm Co-DAPV overlay12932-12933 · Results · Figures 3-4; Table 1
doctor-bladed TiO2/Co-DAPV device, 20 LbL cyclesresearch_0231__mat__mat_tio2_co_dapv_photoanodeElectrode · Composite Sample · CompositePreliminary FTO/TiO2-bl/TiO2-mp/Co-DAPV/Au solid-state photovoltaic device made with doctor-bladed mesoporous TiO2.FTO glass with TiO2 blocking layer and Au top electrode · approximately 50 nm TiO2 blocking layer; about 4 um doctor-bladed TiO2-mp; approximately 100 nm Au; Co-DAPV sensitized for 20 LbL cycles12932 · Results · Figure S4
spin-coated TiO2 thickness optimisation device series, 20 LbL cyclesresearch_0231__mat__mat_tio2_co_dapv_photoanodeElectrode · Composite Sample · CompositeFTO/TiO2-bl/TiO2-mp/Co-DAPV/Au devices used to optimise TiO2-mp film thickness via spin speed.FTO glass with TiO2 blocking layer and Au top electrode · TiO2-mp films spin coated at 500, 1000, 2000, and 3000 rpm; Co-DAPV deposited for 20 LbL cyclesS-7 · Figure S5 and Table S1 · Figure S5; Table S1
bare glass controlresearch_0231__mat__mat_glass_controlThin Film · Pristine Control · UnknownBare glass substrate used as current-density control.glassS-3 · Figure S1 · Figure S1
iodine-induced hole-doped Co-NDC film on glassresearch_0231__mat__mat_iodine_doped_co_ndcThin Film · Pristine Control · DopedPrior/comparison iodine-doped Co-NDC film measured under similar transport conditions.glass substrate12931 · Results · Figure S1 referenced
unsensitized 500 nm mesoporous TiO2 film on FTOresearch_0231__mat__mat_tio2_co_dapv_photoanodeElectrode · Pristine Control · CompositeFTO/TiO2-bl/TiO2-mp before Co-DAPV sensitisation.FTO glass electrode · about 500 nm-thick mesoporous TiO2 filmS-8 · Figure S7 caption · Figure S7