Electrical Transport — Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1%

Measurement evidence

Electrical Transport

Novel Solid-State Solar Cell Based on Hole-Conducting MOF-Sensitizer Demonstrating Power Conversion Efficiency of 2.1% · Ahn D.Y., Lee D.Y., Shin C.Y. et al. · ACS Applied Materials and Interfaces · 2017 · 12930-12935

5 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

four-point probe conductivity/resistivity

Co-DAPV film on glass · Thin Film

Resistivity of Co-DAPV film in dark/ambient condition and under 1 sun illumination.

Geometry
thin film
Context
pristine Co-DAPV film
Measurement source
12931 · Results
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Co-DAPV film resistivity28.62 ohm cmText
Exact Reported
12931 · Results
Co-DAPV film resistivity under 1 sunMarked as a best value within this paper0.24 ohm cm when the measurement was performed under 1 sun light irradiationText
Exact Reported
12931 · Results

Hall-effect measurement

Co-DAPV film on glass · Thin Film

Hall measurement used to determine carrier type, hole concentration and mobility.

Geometry
thin film
Context
pristine Co-DAPV film
Measurement source
12931 · Results
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
carrier typep-type characteristicText
Qualitative
12931 · Results
hole concentration3.35 x 10+8 cm3Text
Exact Reported
12931 · Results
hole mobility0.017 cm2 V-1 s-1Text
Exact Reported
12931 · Results

four-point probe resistivity comparison

iodine-induced hole-doped Co-NDC film on glass · Thin Film

Iodine-induced hole-doped Co-NDC film measured under similar conditions as comparison.

Geometry
thin film
Context
doped Co-NDC comparison film
Measurement source
12931 · Results
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
iodine-doped Co-NDC resistivity5.37 x 10^6 ohm cmText
Exact Reported
12931 · Results

temperature-dependent resistance

Co-DAPV film on glass · Thin Film

Resistance of Co-DAPV film on glass measured as a function of temperature from 300 to 650 K.

Temperature
300-650
Geometry
film on glass substrate
Context
pristine Co-DAPV film
Measurement source
S-4 · Figure S2 · Figure S2
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Co-DAPV resistance at 300 Kapproximately 63 Mohm at 300 Kvisual estimateFigure Axis
Approximate
S-4 · Figure S2 · Figure S2
Co-DAPV resistance at 650 KMarked as a best value within this paperapproximately 22 Mohm at 650 Kvisual estimateFigure Axis
Approximate
S-4 · Figure S2 · Figure S2
temperature dependence interpretationresistance decreases with increasing temperature, revealing semiconductor natureCaption
Qualitative
S-4 · Figure S2 caption · Figure S2

two-point probe current density versus bias potential

Co-DAPV film on glass · Thin Film

Current density-bias curves for glass, glass/Co-NDC, glass/Co-DAPV in dark, and glass/Co-DAPV under light.

Geometry
films on glass substrate
Context
pristine Co-DAPV compared with glass and Co-NDC controls
Measurement source
S-3 · Figure S1 · Figure S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Co-DAPV dark current density at +2 Vapproximately -0.10 microA cm-2 at +2 Vvisual estimateFigure Axis
Approximate
S-3 · Figure S1 · Figure S1
Co-DAPV light current density at +2 VMarked as a best value within this paperapproximately -0.15 microA cm-2 at +2 Vvisual estimateFigure Axis
Approximate
S-3 · Figure S1 · Figure S1
Co-NDC comparison current density at +2 Vapproximately -0.015 microA cm-2 at +2 Vvisual estimateFigure Axis
Approximate
S-3 · Figure S1 · Figure S1
bare glass current density at +2 Vapproximately 0 microA cm-2 at +2 Vvisual estimateFigure Axis
Approximate
S-3 · Figure S1 · Figure S1