Electrical Transport — Ultrathin Self-Assembly Two-Dimensional Metal-Organic Framework Films as Hole Transport Layers in Ideal-Bandgap Perovskite Solar Cells

6 measurement groups · 23 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

J-V photovoltaic measurement and bending stability

flexible Cu3(HHTT)2-based PSC · Electrode

Flexible PET/ITO devices based on MOF and NiOx HTLs; bending radius 5 mm for 300 cycles.

Geometry: PET/ITO/HTL/perovskite/PCBM/BCP/Ag
Context: MOF flexible target compared with NiOx control
Measurement source: p013 / SI p.13 · Characterization of MOF and perovskite · Table S4; Figure 3h-i

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF flexible device retained PCE after bendingMarked as a best value within this paper	about 90% after 300 cycles at 5 mm radius	—	about	Text Approximate	p005 / article p.3366 · Main text · Figure 3i
flexible MOF-HTL reverse PCEMarked as a best value within this paper	20.29%	—	—	SI Table Exact Reported	p013 / SI p.13 · Characterization of MOF and perovskite · Table S4
flexible NiOx-control reverse PCE	18.31%	—	—	SI Table Exact Reported	p013 / SI p.13 · Characterization of MOF and perovskite · Table S4

J-V photovoltaic measurement

standard Cu3(HHTT)2-based inverted PSC · Electrode

MOF HTL with HHTT dipping fixed at 10 min and Cu-ion dipping varied at 2, 5 and 10 min; measured under AM 1.5G one-sun illumination.

Geometry: ITO/Cu3(HHTT)2/perovskite/PCBM/BCP/Ag
Context: MOF-based PSC dipping optimisation
Measurement source: p012 / SI p.12 · Characterization of MOF and perovskite · Table S1; Figure 3d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu 10 min / HHTT 10 min forward PCE	17.83%	—	—	SI Table Exact Reported	p012 / SI p.12 · Characterization of MOF and perovskite · Table S1
Cu 2 min / HHTT 10 min forward PCE	12.16%	—	—	SI Table Exact Reported	p012 / SI p.12 · Characterization of MOF and perovskite · Table S1
Cu 5 min / HHTT 10 min forward PCEMarked as a best value within this paper	22.01%	—	—	SI Table Exact Reported	p012 / SI p.12 · Characterization of MOF and perovskite · Table S1

J-V photovoltaic measurement

standard Cu3(HHTT)2-based inverted PSC · Electrode

MOF HTL with Cu dipping fixed at 5 min and HHTT dipping varied at 5, 10 and 20 min.

Geometry: ITO/Cu3(HHTT)2/perovskite/PCBM/BCP/Ag
Context: MOF-based PSC dipping optimisation
Measurement source: p013 / SI p.13 · Characterization of MOF and perovskite · Table S3; Figure 3e

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu 5 min / HHTT 10 min forward PCEMarked as a best value within this paper	22.01%	—	—	SI Table Exact Reported	p013 / SI p.13 · Characterization of MOF and perovskite · Table S3
Cu 5 min / HHTT 20 min forward PCE	20.60%	—	—	SI Table Exact Reported	p013 / SI p.13 · Characterization of MOF and perovskite · Table S3
Cu 5 min / HHTT 5 min forward PCE	16.01%	—	—	SI Table Exact Reported	p013 / SI p.13 · Characterization of MOF and perovskite · Table S3

J-V photovoltaic measurement

standard Cu3(HHTT)2-based inverted PSC · Electrode

Champion standard PSCs based on Cu3(HHTT)2 or NiOx HTLs compared.

Geometry: ITO/HTL/perovskite/PCBM/BCP/Ag
Context: MOF target device compared with NiOx control
Measurement source: p004 / article p.3365 · Main text · Figure 3f; Figure S11

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
standard MOF-HTL champion FFMarked as a best value within this paper	79.42%	—	—	SI Table Exact Reported	p012 / SI p.12 · Characterization of MOF and perovskite · Table S1
standard MOF-HTL champion JscMarked as a best value within this paper	30.13 mA cm-2	—	—	SI Table Exact Reported	p012 / SI p.12 · Characterization of MOF and perovskite · Table S1
standard MOF-HTL champion PCEMarked as a best value within this paper	22.01%	—	—	SI Table Exact Reported	p004 / article p.3365 · Main text · Figure 3f; Table S1
standard MOF-HTL champion VocMarked as a best value within this paper	0.92 V	—	—	SI Table Exact Reported	p012 / SI p.12 · Characterization of MOF and perovskite · Table S1
standard NiOx-control PCE	20.17%	—	—	Text Exact Reported	p004 / article p.3365 · Main text · Figure 3f; Figure S11

J-V photovoltaic measurement

1 cm2 Cu3(HHTT)2-based PSC · Electrode

ca. 1 cm2 PSCs based on MOF and NiOx HTLs.

Geometry: large-area ITO/HTL/perovskite/PCBM/BCP/Ag
Context: MOF large-area target compared with NiOx control
Measurement source: p013 / SI p.13 · Characterization of MOF and perovskite · Table S5; Figure S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
large-area MOF-HTL reverse PCEMarked as a best value within this paper	19.86%	—	—	SI Table Exact Reported	p013 / SI p.13 · Characterization of MOF and perovskite · Table S5
large-area NiOx-control forward PCE	17.90%	—	—	SI Table Exact Reported	p013 / SI p.13 · Characterization of MOF and perovskite · Table S5

PL, Jph-Veff, dark J-V, SCLC and stability tests

Photoluminescence and fluorescence spectroscopy Space-charge-limited current analysis

hole-only Cu3(HHTT)2/perovskite/Au device · Electrode

Photocarrier extraction, charge collection, dark current, trap-density, light-soaking stability and bending stability comparisons for MOF and NiOx devices.

Atmosphere: N2 for light-soaking stability; white LED 100 mW cm-2
Geometry: standard PSCs and ITO/HTL/perovskite/Au hole-only devices
Context: MOF target compared with NiOx control
Measurement source: p005 / article p.3366 · Main text · Figure 4; Figures S12-S13

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
MOF-based PSC charge collection probability at maximum powerMarked as a best value within this paper	95.2%	—	—	Text Exact Reported	p005 / article p.3366 · Main text · Figure 4b
NiOx-based PSC charge collection probability at maximum power	90.3%	—	—	Text Exact Reported	p005 / article p.3366 · Main text · Figure 4b
MOF device retained PCE after 300 h light soakingMarked as a best value within this paper	85% of original PCE after 300 h	—	—	Text Rounded Reported	p004 / article p.3365 · Main text · Figure S12
NiOx device retained PCE after 300 h light soaking	65% of original PCE after 300 h	—	—	Text Rounded Reported	p004 / article p.3365 · Main text · Figure S12
MOF-based perovskite trap densityMarked as a best value within this paper	2.9 x 10^15 cm-3	—	—	Text Exact Reported	p005 / article p.3366 · Main text · Figure 4d
NiOx-control perovskite trap density	3.3 x 10^15 cm-3	—	—	Text Exact Reported	p005 / article p.3366 · Main text · Figure 4d
MOF device VTFLMarked as a best value within this paper	0.19 V	—	—	Text Exact Reported	p005 / article p.3366 · Main text · Figure 4d