cMOF Evidence Base
Primary studyCore evidenceThin Film Device

Conductive, Large-Area, and Continuous 7,7,8,8-Tetracyanoquinodimethane@HKUST-1 Thin Films Fabricated Using Solution Shearing

Jung S., Huelsenbeck L., Hu Q. et al. · ACS Applied Materials and Interfaces · 2021 · 10202-10209

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2materials
16samples
3synthesis routes
21measurements
42results
9claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Microscopy Morphology9 measurements20 results →Electrical Transport8 measurements12 results →Spectroscopy2 measurements7 results →Diffraction Structure2 measurements3 results →

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: High

The best solution-sheared TCNQ@HKUST-1 thin film reaches 2.42 x 10-2 S m-1, over seven orders of magnitude higher than pristine HKUST-1.

Caveat: Pristine HKUST-1 baseline is reported qualitatively as no current response, without a numeric detection limit.

10202 · Abstract · Figure 5C · Linked to 3 structured results

CaveatSupport assessment: Medium

The solution-sheared films are less conductive than previously reported solvothermal-grown TCNQ@HKUST-1 thin films, which the authors attribute to greater film thickness and slower TCNQ diffusion.

Caveat: This is an author hypothesis rather than a directly isolated variable in the present data.

10207 · Results and Discussion · Linked to 3 structured results

Phase AssignmentSupport assessment: Medium

TCNQ loading preserves the HKUST-1 structure and does not produce detectable Cu(TCNQ) peaks in XRD.

Caveat: Authors explicitly limit this conclusion to the resolution of XRD.

10205 · Results and Discussion · Figure 3A · Linked to 2 structured results

Phase AssignmentSupport assessment: High

TCNQ is incorporated into HKUST-1 and binds to open metal sites, evidenced by FT-IR nitrile shift from 2224 to 2201 cm-1.

10205 · Results and Discussion · Figure 3B · Linked to 3 structured results

Structure Property LinkSupport assessment: Medium

The solution-sheared TCNQ@HKUST-1 thin film is more conductive than pressed TCNQ@HKUST-1 pellets because the continuous film has fewer grain boundaries.

Caveat: Pressed-pellet value is a literature comparison, not a first-hand control made in this paper.

10207 · Results and Discussion · Linked to 3 structured results

Synthesis MechanismSupport assessment: Medium

The SI parameter screen indicates that increasing coating speed and lowering substrate temperature reduce HKUST-1 optical-image film coverage/feature size under the tested conditions.

Caveat: These Figure S1 optical-image coverage percentages differ from the cycle-count coverage values in Table S1 and are kept as a separate metric.

S-2 · Supporting Information · Figure S1 · Linked to 4 structured results

Synthesis MechanismSupport assessment: High

Multiple solution-shearing cycles create large-area continuous HKUST-1 thin films through secondary crystallisation and crystal growth on seed crystals from earlier passes.

Caveat: Detailed cycle-dependent coverage table and EDS image are in missing SI.

S-5-S-6 · Supporting Information · Figure S4; Table S1 · Linked to 8 structured results

Synthesis MechanismSupport assessment: High

Solvent-exchange activation with anhydrous CH2Cl2 minimises Cu(TCNQ) byproduct formation by retaining Cu(II), whereas thermal treatment reduces surface Cu(II) to Cu(I).

Caveat: XPS probes only around 5 nm depth, so bulk reduction state is not fully resolved.

10207 · Results and Discussion · Figure 4D · Linked to 6 structured results

Transport MechanismSupport assessment: High

Increasing TCNQ soaking time increases TCNQ binding probability and raises TCNQ@HKUST-1 conductivity up to a 240 h optimum.

Caveat: Most intermediate conductivity values were figure-read estimates; exact numerical table is not present in the main article.

10207 · Results and Discussion · Figure 5C · Linked to 6 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
HKUST-1Browse family: HKUST-1 / Cu₃(BTC)₂Cu3(BTC)2Cu(II) dimers · 1,3,5-benzenetricarboxylate (BTC; trimesic acid-derived)3D · PristineHKUST-1 copper(II)-benzene-1,3,5-tricarboxylate framework; simple cubic structure reported in introduction.10203 · Introduction
TCNQ@HKUST-1Browse family: HKUST-1 / Cu₃(BTC)₂TCNQ@Cu3(BTC)2Cu(II) dimers / open metal sites in HKUST-1 · BTC framework linkers plus 7,7,8,8-tetracyanoquinodimethane guest3D · CompositeGuest-loaded HKUST-1 in which TCNQ binds to open metal sites while XRD indicates the HKUST-1 crystal structure is retained.10202 · Abstract

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 16 sample records
SampleForm and roleProcessing and geometrySource
Solution-sheared HKUST-1 thin film, 1 cycleresearch_0333__mat__hkust1Thin Film · Pristine Control · Pristine Frameworkone solution-shearing pass at 160 deg C and 0.5 mm s-1glass substrate · 2.1 +/- 0.4 um10204-10205 · Results and Discussion · Figure 2
Solution-sheared HKUST-1 thin film, 2 cyclesresearch_0333__mat__hkust1Thin Film · Pristine Control · Pristine Frameworktwo solution-shearing passesglass substrate · ca. 3.3 um from Figure 2D10204 · Experimental/Results · Figure 2B,D
Solution-sheared HKUST-1 thin film, 3 cyclesresearch_0333__mat__hkust1Thin Film · Pristine Control · Pristine Frameworkthree solution-shearing passesglass substrate · ca. 4.7 um from Figure 2D10204 · Results and Discussion · Figure 2D
Solution-sheared HKUST-1 thin film, 4 cyclesresearch_0333__mat__hkust1Thin Film · Pristine Control · Pristine Frameworkfour solution-shearing passes; solvent-exchange activated before TCNQ loading when used for target samplesglass substrate · 5.4 +/- 0.8 um10205 · Results and Discussion · Figure 2C,D
Thermally treated HKUST-1 thin filmresearch_0333__mat__hkust1Thin Film · Pristine Control · Pristine Frameworkvacuum oven 120 deg C for 10 h then 180 deg C for 2 hglass substrate10204, 10207 · Experimental Section; Results and Discussion · Figure 4D
HKUST-1 thin films from solution-shearing parameter screenresearch_0333__mat__hkust1Thin Film · Pristine Control · Pristine Frameworksolution-sheared HKUST-1 films with varied heated-substrate temperature and coating speedglass substrateS-2 · Supporting Information · Figure S1
TCNQ@HKUST-1 thin film, 120 h TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedsolvent-exchanged; soaked in saturated TCNQ/anhydrous dichloromethane for 120 hglass substrate · 5.4 +/- 0.8 um HKUST-1 platform10206 · Results and Discussion · Figure 5B,C
TCNQ@HKUST-1 thin film, 168 h TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedsolvent-exchanged; soaked in saturated TCNQ/anhydrous dichloromethane for 168 hglass substrate · 5.4 +/- 0.8 um HKUST-1 platform10206 · Results and Discussion · Figure 4C; Figure 5B,C
TCNQ@HKUST-1 thin film, 240 h (10 day) TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedsolvent-exchanged; soaked in saturated TCNQ/anhydrous dichloromethane for 240 h / 10 daysglass substrate · 5.4 +/- 0.8 um HKUST-1 platform10202, 10207 · Abstract; Results and Discussion · Figure 5B,C
TCNQ@HKUST-1 thin film, 24 h TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedsolvent-exchanged; soaked in saturated TCNQ/anhydrous dichloromethane for 24 hglass substrate · 5.4 +/- 0.8 um HKUST-1 platform10206 · Results and Discussion · Figure 4B; Figure 5A
TCNQ@HKUST-1 thin film, 480 h TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedsolvent-exchanged; soaked in saturated TCNQ/anhydrous dichloromethane for 480 hglass substrate · 5.4 +/- 0.8 um HKUST-1 platform10207 · Results and Discussion · Figure 5B,C
TCNQ@HKUST-1 thin film, 48 h TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedsolvent-exchanged; soaked in saturated TCNQ/anhydrous dichloromethane for 48 hglass substrate · 5.4 +/- 0.8 um HKUST-1 platform10206 · Results and Discussion · Figure 5B,C
TCNQ@HKUST-1 thin film, 72 h TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedsolvent-exchanged; soaked in saturated TCNQ/anhydrous dichloromethane for 72 hglass substrate · 5.4 +/- 0.8 um HKUST-1 platform10206 · Results and Discussion · Figure 5B,C
Thermally activated TCNQ@HKUST-1 thin films, 72 and 168 h TCNQ soakresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest LoadedHKUST-1 film thermally activated, then soaked in TCNQ solution for 72 h or 168 hglass substrateS-8 · Supporting Information · Figure S6
Thermally activated TCNQ@HKUST-1 comparison thin filmresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest LoadedHKUST-1 film thermally treated before TCNQ loadingglass substrate10206-10207 · Results and Discussion · Figure 4D
Solvent-exchanged TCNQ@HKUST-1 thin film, loading time unspecifiedresearch_0333__mat__tcnq_hkust1Thin Film · Target Sample · Guest Loadedfour-cycle HKUST-1 film solvent-exchanged in anhydrous CH2Cl2, then soaked in TCNQ solutionglass substrate · based on 4-cycle HKUST-1 platform, 5.4 +/- 0.8 um before/at loading10205 · Results and Discussion · Figure 3