Measurement evidence
Li-TFSI endohedral Metal-Organic frameworks in stable perovskite solar cells for Anti-Deliquescent and restricting ion migration · Wang J., Zhang J., Yang Y. et al. · Chemical Engineering Journal · 2022 · 132481
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
PSC with Li-TFSI@NH2-MIL-101 doped HTL · Electrode
dark-condition device leakage comparison
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| dark leakage current comparison | lower leakage current for Li-TFSI@NH2-MIL-101 doped device | — | — | Qualitative Qualitative | 6 · 2.3. Device performance · Fig. 5f |
PSC with Li-TFSI@NH2-MIL-101 doped HTL · Electrode
Nyquist plots for conventional Li-TFSI and Li-TFSI@NH2-MIL-101 doped PSCs
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| recombination resistance comparison | Rrec significantly increased for Li-TFSI@NH2-MIL-101 doped PSC | — | — | Qualitative Qualitative | 6 · 2.3. Device performance · Fig. 5e |
| charge transport resistance comparison | Rtr slightly larger for Li-TFSI@NH2-MIL-101 doped PSC | — | — | Qualitative Qualitative | 6 · 2.3. Device performance · Fig. 5e |
Li-TFSI@NH2-MIL-101 doped HTL film, 20 mg mL-1 · Thin Film
HTL films; sigma = L/(Rwd); film thickness ~180 nm
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| conductivity of conventional Li-TFSI doped Spiro-OMeTAD | 1.90 x 10-5 S cm-1 | — | — | Figure Axis Rounded Reported | 5 · Supporting Information · Fig. S7b |
| conductivity of pure Spiro-OMeTAD | 9.47 x 10-7 S cm-1 | — | — | Text Exact Reported | 4 · 2.3. Device performance · Fig. S7b |
| conductivity of Li-TFSI@NH2-MIL-101 doped Spiro-OMeTAD, 10 mg mL-1 | 1.45 x 10-5 S cm-1 | — | — | Figure Axis Rounded Reported | 5 · Supporting Information · Fig. S7b |
| conductivity of Li-TFSI@NH2-MIL-101 doped Spiro-OMeTAD, 15 mg mL-1 | 1.65 x 10-5 S cm-1 | — | — | Figure Axis Rounded Reported | 5 · Supporting Information · Fig. S7b |
| conductivity of Li-TFSI@NH2-MIL-101 doped Spiro-OMeTAD, 20 mg mL-1 | 1.77 x 10-5 S cm-1 | — | — | Text Exact Reported | 4 · 2.3. Device performance · Fig. S7b |
| conductivity of Li-TFSI@NH2-MIL-101 doped Spiro-OMeTAD, 5 mg mL-1 | 9.44 x 10-6 S cm-1 | — | — | Figure Axis Rounded Reported | 5 · Supporting Information · Fig. S7b |
Li-TFSI@NH2-MIL-101 doped HTL film, 20 mg mL-1 · Thin Film
ITO/PEDOT:PSS/HTL/MoO3/Ag; Mott-Gurney equation
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| hole mobility of Li-TFSI doped Spiro-OMeTAD | 2.63 x 10-4 cm2 V-1 s-1 | — | — | Text Exact Reported | 4 · 2.3. Device performance · Fig. S8 |
| hole mobility of pure Spiro-OMeTAD | 1.86 x 10-5 cm2 V-1 s-1 | — | — | Text Exact Reported | 4 · 2.3. Device performance · Fig. S8 |
| hole mobility of Li-TFSI@NH2-MIL-101 doped Spiro-OMeTAD | 2.42 x 10-4 cm2 V-1 s-1 | — | — | Text Exact Reported | 4 · 2.3. Device performance · Fig. S8 |
PSC with Li-TFSI@NH2-MIL-101 doped HTL · Electrode
hole-only FTO/PEDOT:PSS/perovskite/HTL/Au devices in dark conditions
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| trap density, conventional Li-TFSI doped device | 1.63 x 10^16 cm-3 | — | — | Text Exact Reported | 5 · 2.3. Device performance · Fig. 4f |
| trap density, Li-TFSI@NH2-MIL-101 doped device | 1.32 x 10^16 cm-3 | — | — | Text Exact Reported | 5 · 2.3. Device performance · Fig. 4f |
| VTFL, conventional Li-TFSI doped device | 0.79 V | — | — | Text Exact Reported | 5 · 2.3. Device performance · Fig. 4f |
| VTFL, Li-TFSI@NH2-MIL-101 doped device | 0.64 V | — | — | Text Exact Reported | 5 · 2.3. Device performance · Fig. 4f |