Partial recipeSource: Main
Route 1: Drop Cast
7 · Experimental section · Device fabrication
Metal precursorsnone
Linker precursorsnone
Solventschlorobenzene; acetonitrile carrier for Li-TFSI stock
AdditivesLi-TFSI; tBP
Atmosphereambient processing implied; not fully specified
Temperaturenot specified for HTL spin coating
Time20 s spin coating
Substrate orientationspin-coated on perovskite/device substrate
Oxidant / reductantambient oxygen participates in Spiro-OMeTAD oxidation according to discussion
Work-upspin-coated at 4000 rpm for 20 s
Activationnone after film formation reported
Scalability contextStandard solution-processed HTL control.
Show 4 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Other | Spiro-OMeTAD | 72.3 mg mL-1 in chlorobenzene · 72.3 mg mL-1 | 7 · Experimental section · Device fabrication |
| Additive | Li-TFSI | 17.5 uL stock · 520 mg mL-1 in acetonitrile; 9.1 mg mL-1 final | 7 · Experimental section · Device fabrication |
| Additive | tBP | 29 uL | 7 · Experimental section · Device fabrication |
| Solvent | chlorobenzene | not specified | 7 · Experimental section · Device fabrication |