Electrical Transport — Electrochromism in Isoreticular Metal-Organic Framework Thin Films with Record High Coloration Efficiency

3 measurement groups · 6 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Zn-NDI@FTO thin film · Thin Film

Absorbance change of XDI radical anion monitored versus square root of time; averages of 3 different film preparations

Atmosphere: electrochemical conditions as above
Geometry: FTO-supported MOF thin film; charge propagation normal to substrate
Context: pristine_framework thin film on FTO
Measurement source: 22 · Apparent diffusion coefficients · Figure S28

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
apparent electron diffusion coefficient Dapp_e	3.2 +- 2.2 x 10^-10 cm2 s-1	—	+- 2.2 x 10^-10	Visual Estimate Approximate	22 · Apparent diffusion coefficients · Figure S28
finite-to-semi-infinite diffusion transition scan rate	approximately 50 mV s-1	—	—	Text Approximate	4 · Electrochemistry of Isoreticular MOF Thin Films · Figures S22/S24/S26

Zn-PDI@FTO thin film · Thin Film

Absorbance change of XDI radical anion monitored versus square root of time; averages of 3 different film preparations

Atmosphere: electrochemical conditions as above
Geometry: FTO-supported MOF thin film; charge propagation normal to substrate
Context: pristine_framework thin film on FTO
Measurement source: 22 · Apparent diffusion coefficients · Figure S28

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
apparent electron diffusion coefficient Dapp_e	1.06 +- 1.1 x 10^-10 cm2 s-1	—	+- 1.1 x 10^-10	Visual Estimate Approximate	22 · Apparent diffusion coefficients · Figure S28
finite-to-semi-infinite diffusion transition scan rate	approximately 50 mV s-1	—	—	Text Approximate	4 · Electrochemistry of Isoreticular MOF Thin Films · Figures S22/S24/S26

Zn-PMDI@FTO thin film · Thin Film

Absorbance change of XDI radical anion monitored versus square root of time; averages of 3 different film preparations

Atmosphere: electrochemical conditions as above
Geometry: FTO-supported MOF thin film; charge propagation normal to substrate
Context: pristine_framework thin film on FTO
Measurement source: 22 · Apparent diffusion coefficients · Figure S28

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
apparent electron diffusion coefficient Dapp_e	1.6 +- 1.5 x 10^-10 cm2 s-1	—	+- 1.5 x 10^-10	Visual Estimate Approximate	22 · Apparent diffusion coefficients · Figure S28
finite-to-semi-infinite diffusion transition scan rate	approximately 50 mV s-1	—	—	Text Approximate	4 · Electrochemistry of Isoreticular MOF Thin Films · Figures S22/S24/S26