Electrical Transport — Intercatenated Coordination Polymers (ICPs) of Carboxylato Bridged Zn(II)-Isoniazid and Their Electrical Conductivity

9 measurement groups · 27 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Impedance spectroscopy, Bode phase, AC conductivity, and capacitance

Electrical conductivity Impedance spectroscopy

Pressed pellet of 1 with silver-paste electrodes · Pellet

Frequency-dependent capacitance recorded with Agilent 4294A LCR meter; impedance and phase evaluated from 40 Hz to 11 MHz at room temperature.

Temperature: room temperature
Geometry: Pellet with silver-paste electrodes on opposite faces
Context: pristine framework pellet
Measurement source: main p.5-main p.6 · Dielectric Measurements · Figures 4-7; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
charge transfer resistance of 1Marked as a best value within this paper	624 Ohm	—	—	Table Exact Reported	main p.6 · Table 2 · Table 2
DC conductivity of 1Marked as a best value within this paper	2.26 x 10^-4 S m^-1	0.000226 S m^-1	—	Table Exact Reported	main p.6 · Table 2 · Table 2
dielectric constant of 1Marked as a best value within this paper	6.11 F m^-1	—	—	Table Exact Reported	main p.6 · Table 2 · Table 2
electron lifetime of 1Marked as a best value within this paper	28.9 x 10^-8 s	2.89e-7 s	—	Table Exact Reported	main p.6 · Table 2 · Table 2

Impedance spectroscopy, Bode phase, AC conductivity, and capacitance

Electrical conductivity Impedance spectroscopy

Pressed pellet of 2 with silver-paste electrodes · Pellet

Frequency-dependent capacitance recorded with Agilent 4294A LCR meter; impedance and phase evaluated from 40 Hz to 11 MHz at room temperature.

Temperature: room temperature
Geometry: Pellet with silver-paste electrodes on opposite faces
Context: pristine framework pellet
Measurement source: main p.5-main p.6 · Dielectric Measurements · Figures 4-7; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
charge transfer resistance of 2	1264 Ohm	—	—	Table Exact Reported	main p.6 · Table 2 · Table 2
DC conductivity of 2	1.12 x 10^-4 S m^-1	0.000112 S m^-1	—	Table Exact Reported	main p.6 · Table 2 · Table 2
dielectric constant of 2	2.68 F m^-1	—	—	Table Exact Reported	main p.6 · Table 2 · Table 2
electron lifetime of 2	3.6 x 10^-8 s	3.6e-8 s	—	Table Exact Reported	main p.6 · Table 2 · Table 2

Impedance spectroscopy, Bode phase, AC conductivity, and capacitance

Electrical conductivity Impedance spectroscopy

Pressed pellet of 3 with silver-paste electrodes · Pellet

Frequency-dependent capacitance recorded with Agilent 4294A LCR meter; impedance and phase evaluated from 40 Hz to 11 MHz at room temperature.

Temperature: room temperature
Geometry: Pellet with silver-paste electrodes on opposite faces
Context: pristine framework pellet
Measurement source: main p.5-main p.6 · Dielectric Measurements · Figures 4-7; Table 2

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
charge transfer resistance of 3	1130 Ohm	—	—	Table Exact Reported	main p.6 · Table 2 · Table 2
DC conductivity of 3	1.25 x 10^-4 S m^-1	0.000125 S m^-1	—	Table Exact Reported	main p.6 · Table 2 · Table 2
dielectric constant of 3	3.91 F m^-1	—	—	Table Exact Reported	main p.6 · Table 2 · Table 2
electron lifetime of 3	8.4 x 10^-8 s	8.4e-8 s	—	Table Exact Reported	main p.6 · Table 2 · Table 2

Dark I-V measurement and Cheung analysis of Schottky junction

Electrical conductivity

ITO/1/Al Schottky thin-film device · Thin Film

Keithley 2400 SourceMeter; applied bias swept within +/-2 V under dark condition.

Atmosphere: dark condition
Geometry: ITO/1/Al sandwich-like thin-film device
Context: pristine framework thin-film device
Measurement source: main p.6-main p.7 · Electrical Properties of Schottky Device · Figure 8; Table 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height of 1Marked as a best value within this paper	0.368 eV	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3
rectification ratio of 1 under dark conditionMarked as a best value within this paper	176	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3
series resistance of 1Marked as a best value within this paper	567.22 Ohm	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3

Dark I-V measurement and Cheung analysis of Schottky junction

Electrical conductivity

ITO/2/Al Schottky thin-film device · Thin Film

Keithley 2400 SourceMeter; applied bias swept within +/-2 V under dark condition.

Atmosphere: dark condition
Geometry: ITO/2/Al sandwich-like thin-film device
Context: pristine framework thin-film device
Measurement source: main p.6-main p.7 · Electrical Properties of Schottky Device · Figure 8; Table 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height of 2	0.511 eV	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3
rectification ratio of 2 under dark condition	80.62	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3
series resistance of 2	1385.71 Ohm	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3

Dark I-V measurement and Cheung analysis of Schottky junction

Electrical conductivity

ITO/3/Al Schottky thin-film device · Thin Film

Keithley 2400 SourceMeter; applied bias swept within +/-2 V under dark condition.

Atmosphere: dark condition
Geometry: ITO/3/Al sandwich-like thin-film device
Context: pristine framework thin-film device
Measurement source: main p.6-main p.7 · Electrical Properties of Schottky Device · Figure 8; Table 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height of 3	0.501 eV	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3
rectification ratio of 3 under dark condition	81.73	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3
series resistance of 3	1133.96 Ohm	—	—	Table Exact Reported	main p.7 · Table 3 · Table 3

Space-charge-limited-current analysis using Mott-Gurney equation

Space-charge-limited current analysis

ITO/1/Al Schottky thin-film device · Thin Film

Effective carrier mobility estimated from high-voltage region of I vs V2 graph; transient time estimated from forward I-V slope.

Atmosphere: dark condition
Geometry: ITO/1/Al; film thickness considered about 1 um
Context: pristine framework thin-film device
Measurement source: main p.7-main p.8 · Electrical Properties of Schottky Device · Figure 10; Table 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
effective carrier mobility of 1Marked as a best value within this paper	2.53 x 10^-10 m2 V^-1 s^-1	2.53e-10 m^2 V^-1 s^-1	—	Table Exact Reported	main p.8 · Table 4 · Table 4
transient time of 1Marked as a best value within this paper	1.7 x 10^-3 s	0.0017 s	—	Table Exact Reported	main p.8 · Table 4 · Table 4

Space-charge-limited-current analysis using Mott-Gurney equation

Space-charge-limited current analysis

ITO/2/Al Schottky thin-film device · Thin Film

Effective carrier mobility estimated from high-voltage region of I vs V2 graph; transient time estimated from forward I-V slope.

Atmosphere: dark condition
Geometry: ITO/2/Al; film thickness considered about 1 um
Context: pristine framework thin-film device
Measurement source: main p.7-main p.8 · Electrical Properties of Schottky Device · Figure 10; Table 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
effective carrier mobility of 2	1.86 x 10^-10 m2 V^-1 s^-1	1.86e-10 m^2 V^-1 s^-1	—	Table Exact Reported	main p.8 · Table 4 · Table 4
transient time of 2	1.2 x 10^-3 s	0.0012 s	—	Table Exact Reported	main p.8 · Table 4 · Table 4

Space-charge-limited-current analysis using Mott-Gurney equation

Space-charge-limited current analysis

ITO/3/Al Schottky thin-film device · Thin Film

Effective carrier mobility estimated from high-voltage region of I vs V2 graph; transient time estimated from forward I-V slope.

Atmosphere: dark condition
Geometry: ITO/3/Al; film thickness considered about 1 um
Context: pristine framework thin-film device
Measurement source: main p.7-main p.8 · Electrical Properties of Schottky Device · Figure 10; Table 4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
effective carrier mobility of 3	1.89 x 10^-10 m2 V^-1 s^-1	1.89e-10 m^2 V^-1 s^-1	—	Table Exact Reported	main p.8 · Table 4 · Table 4
transient time of 3	1.6 x 10^-3 s	0.0016 s	—	Table Exact Reported	main p.8 · Table 4 · Table 4