Electrical Transport — Influence of Axial Linkers on Polymerization in Paddle-Wheel Cu(II) Coordination Polymers for the Application of Optoelectronics Devices

Measurement evidence

Electrical Transport

Influence of Axial Linkers on Polymerization in Paddle-Wheel Cu(II) Coordination Polymers for the Application of Optoelectronics Devices · Jana S., Jana R., Sil S. et al. · Crystal Growth and Design · 2019 · 6283-6290

8 measurement groups · 37 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

capacitance-frequency dielectric analysis

compound 1 Al/compound/ITO Schottky thin-film device · Thin Film

Capacitance versus frequency; dielectric constant calculated from saturation capacitance and film geometry.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
6 · Electrical Characterization · Figure 12; Figure S6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
dielectric constant1.36Text
Exact Reported
6 · Electrical Characterization · Figure 12; Figure S6

capacitance-frequency dielectric analysis

compound 2 Al/compound/ITO Schottky thin-film device · Thin Film

Capacitance versus frequency; dielectric constant calculated from saturation capacitance and film geometry.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
6 · Electrical Characterization · Figure 12; Figure S6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
dielectric constant1.25Text
Exact Reported
6 · Electrical Characterization · Figure 12; Figure S6

impedance spectroscopy and frequency-dependent AC conductivity

compound 1 Al/compound/ITO Schottky thin-film device · Thin Film

40 Hz-10 MHz at room temperature; dark condition; dc conductivity extrapolated from low-frequency AC conductivity plot.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
4,6 · Electrical Characterization; Materials and General Method · Figure 7
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
conductivity advantage of compound 1 over compound 2~150 times higher than 2Text
Approximate
1 · Abstract
room-temperature dc conductivityMarked as a best value within this paper3.12 x 10-4 S m-1Text
Exact Reported
4 · Electrical Characterization · Figure 7

impedance spectroscopy and frequency-dependent AC conductivity

compound 2 Al/compound/ITO Schottky thin-film device · Thin Film

40 Hz-10 MHz at room temperature; dark condition; dc conductivity extrapolated from low-frequency AC conductivity plot.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
4,6 · Electrical Characterization; Materials and General Method · Figure 7
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
room-temperature dc conductivity2.65 x 10-6 S m-1Text
Exact Reported
4 · Electrical Characterization · Figure 7

current-voltage measurement and thermionic-emission/Cheung analysis

compound 1 Al/compound/ITO Schottky thin-film device · Thin Film

Bias -1 to +1 V; dark and AM 1.5 light irradiation; white-light irradiance about 1000 W m-2; room temperature.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
4-5,6 · Electrical Characterization; Materials and General Method · Figures 8-10; Table S5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Schottky barrier height from H(I) vs I0.6SI Table
Exact Reported
9 · Optical Study · Table S5
Schottky barrier height from H(I) vs I0.58SI Table
Exact Reported
9 · Optical Study · Table S5
ideality factor eta1.23SI Table
Exact Reported
9 · Optical Study · Table S5
ideality factor eta1.05SI Table
Exact Reported
9 · Optical Study · Table S5
on/off rectification ratio16.0SI Table
Exact Reported
9 · Optical Study · Table S5
on/off rectification ratio34.64SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from d(V)/d(lnI) vs I286.71SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from d(V)/d(lnI) vs I148.09SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from H(I) vs I287.3SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from H(I) vs I147.56SI Table
Exact Reported
9 · Optical Study · Table S5

current-voltage measurement and thermionic-emission/Cheung analysis

compound 2 Al/compound/ITO Schottky thin-film device · Thin Film

Bias -1 to +1 V; dark and AM 1.5 light irradiation; white-light irradiance about 1000 W m-2; room temperature.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
4-5,6 · Electrical Characterization; Materials and General Method · Figures 8-10; Table S5
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Schottky barrier height from H(I) vs I0.76SI Table
Exact Reported
9 · Optical Study · Table S5
Schottky barrier height from H(I) vs I0.74SI Table
Exact Reported
9 · Optical Study · Table S5
ideality factor eta2.23SI Table
Exact Reported
9 · Optical Study · Table S5
ideality factor eta1.42SI Table
Exact Reported
9 · Optical Study · Table S5
on/off rectification ratio17.39SI Table
Exact Reported
9 · Optical Study · Table S5
on/off rectification ratio28.25SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from d(V)/d(lnI) vs I75700.0SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from d(V)/d(lnI) vs I32800.0SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from H(I) vs I74900.0SI Table
Exact Reported
9 · Optical Study · Table S5
series resistance from H(I) vs I35900.0SI Table
Exact Reported
9 · Optical Study · Table S5

SCLC analysis from I versus V^2 plot

compound 1 Al/compound/ITO Schottky thin-film device · Thin Film

Dark and light conditions; effective mobility derived from Mott-Gurney SCLC equation; transit time derived by reported equation.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
5-6 · Electrical Characterization · Figure 11; Table S6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
effective carrier mobility5.21e-05SI Table
Exact Reported
9-10 · Optical Study · Table S6
effective carrier mobility0.000107SI Table
Exact Reported
9-10 · Optical Study · Table S6
SCLC conductivity0.00074SI Table
Exact Reported
9-10 · Optical Study · Table S6
SCLC conductivity0.00172SI Table
Exact Reported
9-10 · Optical Study · Table S6
transit time2.3e-08SI Table
Exact Reported
9-10 · Optical Study · Table S6
transit time1.11e-08SI Table
Exact Reported
9-10 · Optical Study · Table S6

SCLC analysis from I versus V^2 plot

compound 2 Al/compound/ITO Schottky thin-film device · Thin Film

Dark and light conditions; effective mobility derived from Mott-Gurney SCLC equation; transit time derived by reported equation.

Temperature
room temperature
Geometry
Al/compound/ITO sandwich thin-film device
Context
pristine framework thin film
Measurement source
5-6 · Electrical Characterization · Figure 11; Table S6
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
effective carrier mobility6.48e-07SI Table
Exact Reported
9-10 · Optical Study · Table S6
effective carrier mobility1.21e-06SI Table
Exact Reported
9-10 · Optical Study · Table S6
SCLC conductivity3.66e-06SI Table
Exact Reported
9-10 · Optical Study · Table S6
SCLC conductivity1.15e-05SI Table
Exact Reported
9-10 · Optical Study · Table S6
transit time1.91e-06SI Table
Exact Reported
9-10 · Optical Study · Table S6
transit time1.02e-06SI Table
Exact Reported
9-10 · Optical Study · Table S6