Electrical Transport — Naphthalene Diimide-Based Hydrogen-Bonded Organic Framework for High Electrical Conductivity and Ammonia Sensor Applications

Measurement evidence

Electrical Transport

Naphthalene Diimide-Based Hydrogen-Bonded Organic Framework for High Electrical Conductivity and Ammonia Sensor Applications · Imaoka K., Kim H.S., Yamamoto Y. et al. · Advanced Functional Materials · 2024 · 2409299

5 measurement groups · 10 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

I-V comparison for amine-doped NDI(CPOH)2-SCs

ammonia-doped NDI(CPOH)2-SC sensor device · Single Crystal

Figure S16 compares pristine, hydrazine, ammonia, triethylamine, and diethylamine treatments

Atmosphere
amine vapour treatment under ambient conditions; ammonia requires UV irradiation
Geometry
single-crystal device
Context
dopant-size/accessibility comparison for porous HOF
Measurement source
p.17 · Figure S16 · Figure S16a
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
amine dopant conductivity selectivityonly ammonia showed high conductivity comparable to hydrazine; triethylamine and diethylamine were much lowerText
Qualitative
p.7 · 2.5 / Figure S16 · Figure S16

two-probe I-V; SMU B1500A

Device A pristine drop-cast NDI(CPOH)2-SC · Single Crystal

vacuum 10^-3 Pa, dark, gap-type device; C60/Au or Au electrodes on single crystal

Atmosphere
vacuum 10^-3 Pa
Geometry
gap-type device; W = 4.78 x 10^-3 cm and L = 7.82 x 10^-4 cm shown in Figure 2a
Context
pristine Device A control
Measurement source
p.4 · 2.3. Electronic Characterization of NDI(CPOH)2-Based HOF · Figure 2a,b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Device A pristine electrical conductivity5.4 x 10^-8 S cm^-1Text
Rounded Reported
p.5 · 2.3. Electronic Characterization of NDI(CPOH)2-Based HOF · Figure 2d
Device A estimated electron mobility6.8 x 10^-6 cm2 V^-1 s^-1Calculated From Reported
Rounded Reported
p.4 · 2.3. Electronic Characterization of NDI(CPOH)2-Based HOF · Figure 2b
Device A high-voltage I-V exponentI proportional V^2.06 +/- 0.007+/- 0.007Figure Axis
Exact Reported
p.4 · Figure 2 · Figure 2b
Device A channel length LL = 7.82 x 10^-4 cmFigure Axis
Exact Reported
p.4 · Figure 2 · Figure 2a
Device A channel width WW = 4.78 x 10^-3 cmFigure Axis
Exact Reported
p.4 · Figure 2 · Figure 2a

two-probe I-V; SMU B1500A

Device B hydrazine-doped NDI(CPOH)2-SC, normal treatment · Single Crystal

vacuum 10^-3 Pa, dark, hydrazine-doped normal-treated SC device

Atmosphere
vacuum 10^-3 Pa
Geometry
gap-type single-crystal device
Context
hydrazine-doped Device B compared with pristine Device A
Measurement source
p.4 · 2.3. Electronic Characterization of NDI(CPOH)2-Based HOF · Figure 2b,d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Device B hydrazine-doped electrical conductivity1.4 x 10^-3 S cm^-1Text
Rounded Reported
p.5 · 2.3. Electronic Characterization of NDI(CPOH)2-Based HOF · Figure 2d
Device B I-V exponentI proportional V^1.02 +/- 0.002+/- 0.002Figure Axis
Exact Reported
p.4 · Figure 2 · Figure 2b

two-probe I-V conductivity after vacuum pretreatment and hydrazine doping

Device C vacuum-pretreated hydrazine-doped NDI(CPOH)2-SC · Single Crystal

pristine SC vacuum-treated at 10^-5 Pa for 2 days then hydrazine-doped; I-V under vacuum 10^-3 Pa in dark

Atmosphere
vacuum 10^-3 Pa measurement; 10^-5 Pa pretreatment
Geometry
gap-type single-crystal device
Context
highest-conductivity hydrazine-doped Device C
Measurement source
p.5 · 2.3. Electronic Characterization of NDI(CPOH)2-Based HOF · Figure 2c,d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Device C vacuum-pretreated hydrazine-doped electrical conductivityMarked as a best value within this paper2.9 x 10^-2 S cm^-1Text
Rounded Reported
p.5 · 2.3. Electronic Characterization of NDI(CPOH)2-Based HOF · Figure 2d

temperature-dependent I-V

Device B hydrazine-doped NDI(CPOH)2-SC, normal treatment · Single Crystal

Device A measured from 303 to 263 K; Device B measured from 303 to 173 K

Temperature
173-303
Geometry
single-crystal device
Context
pristine and hydrazine-doped devices
Measurement source
Figure S15 caption · Figure S15
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
temperature-dependent electrical conductivityboth Device A and Device B exhibited temperature-dependent electrical conductivity characteristicsText
Qualitative
p.5 · 2.4. Theoretical Description of Charge Mobility · Figure S15