Wojciechowski M., Hovorova K. · Acta IMEKO · 2024
Open a family to keep every result attached to its sample, method and conditions.
Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.
Broadband noise testing in the 10 kHz to 100 MHz band is proposed as a quick screen to eliminate samples whose corner frequency is too high for QHRS applications.
Caveat: The example sample composition is not disclosed.
p005-p006 · 3. Testing the broadband electrical noise measurement setup · Figure 7 · Linked to 3 structured results
The proposed electrical-noise measurement setup is claimed to meet the assumptions for operation from 10 kHz to 100 MHz for detecting fc in candidate semiconductor structures.
Caveat: Material-specific validation is only shown for an anonymous semiconductor sample; no named MOF/COF sample is characterised.
p006 · Conclusions · Linked to 3 structured results
The paper is first-hand experimental work on a noise-measurement setup, but it does not report the synthesis, composition, or structure of a specific conductive MOF/COF sample.
Caveat: The article discusses 2D-COF/MOF structures as intended target materials; no SI or CIF is cited in the supplied main article.
p006 · Conclusions
Adding the low-noise preamplifier reduces the effective measurement-chain noise figure compared with the spectrum analyser alone.
Caveat: The exact best value depends on the preamplifier variant: 0.64 dB is reported for the built setup calculation, while Table 1 gives 0.35 dB for an optimised four-stage variant.
p004 · 2.2 Preamplifier · Linked to 3 structured results
Names and aliases are kept exactly within the paper’s own identity model.
| Material | Composition | Structure context | Source |
|---|---|---|---|
| unspecified two-dimensional COF/MOF semiconductor structures for QHRS | Not specifiedNot specified; described only as two-dimensional covalent- and metal-organic frameworks · Not specified | 2D · Model SystemTarget class of new Dirac-material semiconductor structures; no individual framework structure is reported. | p001 · Abstract |
| anonymous semiconductor material sample shown in Figure 7 | Not specified | unknown · UnknownUnspecified semiconductor sample used to demonstrate broadband noise screening; identity and framework status are not disclosed. | p006 · 3. Testing the broadband electrical noise measurement setup · Figure 7 |
| broadband electrical-noise measurement setup | Not specified | unknown · Model SystemInstrumental model system comprising an ESCI 3 spectrum analyser/RF receiver, low-noise preamplifier stages, noise source/generator, and 50 ohm impedance-matched connections. | p002 · 2. Description of the measuring setup |
Sample form, processing state and composition status define the context for measurements.
| Sample | Form and role | Processing and geometry | Source |
|---|---|---|---|
| paper-level 2D-COF/MOF semiconductor model targetsresearch_0746__mat__mat_2d_cof_mof_qhrs_class | Model · Model System · Model | No actual target material sample is synthesised or measured by composition; the paper defines the intended model-material class for later QHRS noise screening. | p006 · Conclusions |
| Figure 7 semiconductor material sampleresearch_0746__mat__mat_anonymous_semiconductor_fig7 | Unknown · Target Sample · Unknown | Placed in shielded housing with a current-forcing system and preamplifier; batteries also placed in the housing. | p006 · 3. Testing the broadband electrical noise measurement setup · Figure 7 |
| ESCI 3 spectrum analyser and low-noise preamplifier setupresearch_0746__mat__mat_broadband_noise_setup | Model · Model System · Model | Assembled and evaluated as a broadband electrical-noise measurement apparatus. | p004 · 3. Testing the broadband electrical noise measurement setup · Figure 4 |