Diffraction Structure — Dielectric relaxation processes, electronic structure, and band gap engineering of MFU-4-type metal-organic frameworks: Towards a rational design of semiconducting microporous materials

Measurement evidence

Diffraction Structure

Dielectric relaxation processes, electronic structure, and band gap engineering of MFU-4-type metal-organic frameworks: Towards a rational design of semiconducting microporous materials · Sippel P., Denysenko D., Loidl A. et al. · Advanced Functional Materials · 2014 · 3885-3896

2 measurement groups · 3 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Isostructural assignment from crystallographic symmetry and atom positions

Co-MFU-4 powder heated at 280 C under vacuum · Powder

Co-MFU-4 is described as isostructural with MFU-4 after Zn2+ to Co2+ substitution.

Context
pristine Co-MFU-4 framework
Measurement source
p002 · Introduction · text
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Co-MFU-4 isostructural with MFU-4Marked as a best value within this paperCo-MFU-4 is isostructural with MFU-4Text
Qualitative
p002 · Introduction · text

Crystallographic structure assignment from reported MFU-4 structure

MFU-4 powder heated at 280 C under vacuum · Powder

Cubic MFU-4 framework described in introduction; structure source is previous crystallographic work cited by authors.

Context
pristine MFU-4 framework
Measurement source
p002 · Introduction · Fig. 1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
MFU-4 cubic lattice parameter aMarked as a best value within this papera = 21.697(3) A(3) A in last digitText
Exact Reported
p002 · Introduction · text
MFU-4 space groupFm(1)m (no. 225), interpreted as Fm-3mText
Exact Reported
p002 · Introduction · text