Porosity — Dielectric relaxation processes, electronic structure, and band gap engineering of MFU-4-type metal-organic frameworks: Towards a rational design of semiconducting microporous materials

Measurement evidence

Porosity

Dielectric relaxation processes, electronic structure, and band gap engineering of MFU-4-type metal-organic frameworks: Towards a rational design of semiconducting microporous materials · Sippel P., Denysenko D., Loidl A. et al. · Advanced Functional Materials · 2014 · 3885-3896

1 measurement group · 5 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Framework void/cavity assessment and TGA-derived solvent loading from cited MFU-4 data

As-prepared DMF-loaded MFU-4 powder · Powder

Freshly prepared MFU-4 contains occluded DMF in the large voids.

Context
guest-loaded MFU-4
Measurement source
p002 · Introduction · Fig. 2 / text
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
MFU-4 spherical cavity diameterapprox. diameter of ca. 12 Aca.Text
Approximate
p002 · Introduction · text
DMF loading per MFU-4 cavityMarked as a best value within this paperup to six DMF molecules per cavityup toText
Rounded Reported
p002 · Introduction · Fig. 2 / text
DMF loading per MFU-4 unit cellup to 24 DMF molecules in totalup toCaption
Rounded Reported
p003 · Figure caption · Fig. 2
MFU-4-type specific surface area typical lower boundtypically exceeding 1000 m2 g-1exceeding; typical family valueText
Approximate
p002 · Introduction · text
MFU-4 unit-cell void-volume fractionMarked as a best value within this paperabout 58%0.58 fractionaboutText
Approximate
p002 · Introduction · text