Electrical Transport — Correlation in Structural Architecture toward Fabrication of Schottky Device with a Series of Pyrazine Appended Coordination Polymers

9 measurement groups · 54 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Impedance spectroscopy; Nyquist, Bode phase and AC/DC conductivity analysis

Electrical conductivity Impedance spectroscopy

As-synthesised crystals/powder of 1 · Powder

As-synthesised powder form of crystalline material; room-temperature frequency-dependent conductivity analysis.

Context: pristine framework powder
Measurement source: 20953 · Electrical Characterization · Table 1; Figure 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DC conductivity from impedance	9.18 x 10^-6 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 1
Electron lifetime from impedance	4.39 x 10^-8 s	4.39e-8 s	—	Table Exact Reported	20953 · Electrical Characterization · Table 1
Charge transfer resistance	8988 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 1

Impedance spectroscopy; Nyquist, Bode phase and AC/DC conductivity analysis

Electrical conductivity Impedance spectroscopy

As-synthesised crystals/powder of 2 · Powder

As-synthesised powder form of crystalline material; room-temperature frequency-dependent conductivity analysis.

Context: pristine framework powder
Measurement source: 20953 · Electrical Characterization · Table 1; Figure 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DC conductivity from impedance	5.51 x 10^-5 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 1
Electron lifetime from impedance	15.1 x 10^-8 s	1.51e-7 s	—	Table Exact Reported	20953 · Electrical Characterization · Table 1
Charge transfer resistance	5013 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 1

Impedance spectroscopy; Nyquist, Bode phase and AC/DC conductivity analysis

Electrical conductivity Impedance spectroscopy

As-synthesised crystals/powder of 3 · Powder

As-synthesised powder form of crystalline material; room-temperature frequency-dependent conductivity analysis.

Context: pristine framework powder
Measurement source: 20953 · Electrical Characterization · Table 1; Figure 5

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
DC conductivity from impedanceMarked as a best value within this paper	1.10 x 10^-4 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 1
Electron lifetime from impedanceMarked as a best value within this paper	38.6 x 10^-8 s	3.86e-7 s	—	Table Exact Reported	20953 · Electrical Characterization · Table 1
Charge transfer resistanceMarked as a best value within this paper	2529 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 1

Current-voltage Schottky diode analysis and Cheung method

Electrical conductivity

ITO/1/Al Schottky thin-film device · Thin Film

ITO/1/Al thin-film device under dark and light conditions; bias range +/-1.5 V.

Geometry: ITO/1/Al, 5 um film, 3 x 3 mm2 diode area
Context: pristine CP thin film between ITO and Al contacts
Measurement source: 20953 · Electrical Characterization · Table 2; Figures 6-7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Barrier height, dark	0.74 eV	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Barrier height, light	0.72 eV	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Photo sensitivity	1.12	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Rectification ratio, dark	8.05	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Rectification ratio, light	10.20	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Series resistance from dV/dlnI, dark	51031 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Series resistance from dV/dlnI, light	27235 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Schottky device conductivity, dark	4.72 x 10^-5 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Schottky device conductivity, light	5.06 x 10^-5 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2

Current-voltage Schottky diode analysis and Cheung method

Electrical conductivity

ITO/2/Al Schottky thin-film device · Thin Film

ITO/2/Al thin-film device under dark and light conditions; bias range +/-1.5 V.

Geometry: ITO/2/Al, 5 um film, 3 x 3 mm2 diode area
Context: pristine CP thin film between ITO and Al contacts
Measurement source: 20953 · Electrical Characterization · Table 2; Figures 6-7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Barrier height, dark	0.74 eV	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Barrier height, light	0.71 eV	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Photo sensitivity	1.35	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Rectification ratio, dark	8.99	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Rectification ratio, light	16.70	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Series resistance from dV/dlnI, dark	23677 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Series resistance from dV/dlnI, light	5608 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Schottky device conductivity, dark	1.10 x 10^-4 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Schottky device conductivity, light	1.80 x 10^-4 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2

Current-voltage Schottky diode analysis and Cheung method

Electrical conductivity

ITO/3/Al Schottky thin-film device · Thin Film

ITO/3/Al thin-film device under dark and light conditions; bias range +/-1.5 V.

Geometry: ITO/3/Al, 5 um film, 3 x 3 mm2 diode area
Context: pristine CP thin film between ITO and Al contacts
Measurement source: 20954 · Electrical Characterization · Table 2; Figure 7

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Barrier height, dark	0.75 eV	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Barrier height, lightMarked as a best value within this paper	0.70 eV	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Photo sensitivityMarked as a best value within this paper	5.79	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Rectification ratio, darkMarked as a best value within this paper	13.5	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Rectification ratio, lightMarked as a best value within this paper	17.60	—	—	Table Exact Reported	20954 · Electrical Characterization · Table 2
Series resistance from dV/dlnI, darkMarked as a best value within this paper	16757 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Series resistance from dV/dlnI, lightMarked as a best value within this paper	2477 Ohm	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Schottky device conductivity, darkMarked as a best value within this paper	1.12 x 10^-4 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2
Schottky device conductivity, lightMarked as a best value within this paper	1.93 x 10^-3 S m^-1	—	—	Table Exact Reported	20953 · Electrical Characterization · Table 2

SCLC analysis of forward-bias I-V characteristics

Electrical conductivity Space-charge-limited current analysis

ITO/1/Al Schottky thin-film device · Thin Film

Charge transport parameters from I vs V2, capacitance-frequency and ln I vs ln V analyses.

Geometry: ITO/1/Al, 5 um film
Context: pristine CP thin film device
Measurement source: 20955-20956 · Electrical Characterization · Tables 3-4; Figures 8-9

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Diffusion constant, light	7.04 x 10^-6	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Relative dielectric constant	0.338	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Effective carrier mobility, dark	2.67 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Effective carrier mobility, light	2.72 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Transit time, light	4.36 ns	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Trap energy, light	121.98 meV	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 4

SCLC analysis of forward-bias I-V characteristics

Electrical conductivity Space-charge-limited current analysis

ITO/2/Al Schottky thin-film device · Thin Film

Charge transport parameters from I vs V2, capacitance-frequency and ln I vs ln V analyses.

Geometry: ITO/2/Al, 5 um film
Context: pristine CP thin film device
Measurement source: 20955-20956 · Electrical Characterization · Tables 3-4; Figures 8-9

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Diffusion constant, light	1.71 x 10^-5	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Relative dielectric constant	0.506	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Effective carrier mobility, dark	5.01 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Effective carrier mobility, light	6.62 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Transit time, light	3.97 ns	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Trap energy, light	64.75 meV	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 4

SCLC analysis of forward-bias I-V characteristics

Electrical conductivity Space-charge-limited current analysis

ITO/3/Al Schottky thin-film device · Thin Film

Charge transport parameters from I vs V2, capacitance-frequency and ln I vs ln V analyses.

Geometry: ITO/3/Al, 5 um film
Context: pristine CP thin film device
Measurement source: 20956 · Electrical Characterization · Tables 3-4

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Diffusion constant, lightMarked as a best value within this paper	2.13 x 10^-5	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Relative dielectric constantMarked as a best value within this paper	1.48	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Effective carrier mobility, darkMarked as a best value within this paper	5.03 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Effective carrier mobility, lightMarked as a best value within this paper	8.24 x 10^-4 m2 V^-1 s^-1	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Transit time, lightMarked as a best value within this paper	1.37 ns	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 3
Trap energy, lightMarked as a best value within this paper	172.75 meV	—	—	Table Exact Reported	20956 · Electrical Characterization · Table 4