Application RelevanceSupport assessment: High
The flexible Ce-BTC/ZnO photodetector maintains strong switching behaviour after bending, retaining 98.6% of the original Ion/Ioff ratio after 160 bending cycles.
Caveat: Bending angles are shown as insets but exact angle values are not extracted in text.
7 · Results and Discussion · Figure 6a and Figure S6 · Linked to 2 structured results
Application RelevanceSupport assessment: High
The rigid Ce-BTC/n-Si self-powered photodetector achieves the paper's highest responsivity, detectivity and fastest decay time among benchmarked MOF-based self-powered photodetectors.
Caveat: Benchmark comparison is against selected literature values in Table 1.
8 · Results and Discussion · Table 1 · Linked to 3 structured results
Structure Property LinkSupport assessment: High
Increasing Ce-BTC film thickness lowers sheet resistance and carrier concentration, raises mobility and band gap, and reduces optical transmittance; 320 nm balances transparency and conductivity for devices.
Caveat: Intermediate electrical values are read approximately from figure axes where not stated in text.
8 · Conclusions · Figure 2 · Linked to 8 structured results
Transport MechanismSupport assessment: High
Ce-BTC films behave as p-type semiconductors, enabling p-n heterojunctions with n-Si and n-ZnO.
Caveat: Carrier type is reported from Hall coefficient but no raw Hall voltage data are tabulated.
3 · Results and Discussion · Figure 2a-c · Linked to 3 structured results
Transport MechanismSupport assessment: Medium
Type-II band alignment and built-in electric fields in Ce-BTC/n-Si and Ce-BTC/ZnO separate photogenerated electron-hole pairs and enable self-powered UV photodetection.
Caveat: Band positions are partly calculated from UPS/Tauc data and literature ZnO values; one Ce-BTC EC value in text appears inconsistent with earlier calculation.
7 · Results and Discussion · Figure 6b · Linked to 5 structured results