Measurement evidence
From Rigid to Flexible: Ce-BTC-MOF-Enabled Self-Powered Photodetectors with Record-High Responsivity and Detectivity · Sun J., Gao S., Zhang C. et al. · ACS Applied Materials and Interfaces · 2025 · 55143-55152
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
Optimised 320 nm Ce-BTC thin film · Thin Film
Ag/Ce-BTC contact check in SI Figure S4.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Ag/Ce-BTC contact behaviour | linear I-V curve; Ohmic contact assigned | — | — | Figure Axis Qualitative | 3 · Supporting Information · Figure S4 |
Ce-BTC thin films on glass, thickness series · Thin Film
FoMH = Tq/Rs and FoMG approximately -1/(Rs ln T) versus thickness.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| FoMH/FoMG meeting thicknessMarked as a best value within this paper | 320 nm | — | — | Text Exact Reported | 4 · Results and Discussion · Figure 2f |
Ce-BTC thin films on glass, thickness series · Thin Film
Sheet resistance, Hall mobility and carrier concentration measured at room temperature for Ce-BTC films of different thicknesses.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| carrier concentration at 151 nm | ca. 4.8 x 10^16 cm-3 | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2c |
| carrier concentration at 320 nm | ca. 3.2 x 10^16 cm-3 | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2c |
| carrier concentration at 510 nm | ca. 2.2 x 10^16 cm-3 | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2c |
| maximum carrier concentration at 78 nmMarked as a best value within this paper | 5.4 x 10^16 cm-3 | — | — | Text Rounded Reported | 4 · Results and Discussion · Figure 2c |
| minimum carrier concentration at 850 nm | 1.5 x 10^16 cm-3 | — | — | Text Rounded Reported | 4 · Results and Discussion · Figure 2c |
| Hall carrier type | positive Hall coefficient; p-type semiconductor characteristics | — | — | Text Qualitative | 3 · Results and Discussion · Figure 2a-c |
| Hall mobility at 151 nm | ca. 3.1 cm2 V-1 s-1 | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2b |
| Hall mobility at 320 nm | ca. 6.9 cm2 V-1 s-1 | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2b |
| Hall mobility at 510 nm | ca. 10.6 cm2 V-1 s-1 | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2b |
| minimum Hall mobility at 78 nm | 1.6 cm2 V-1 s-1 | — | — | Text Rounded Reported | 4 · Results and Discussion · Figure 2b |
| maximum Hall mobility at 850 nmMarked as a best value within this paper | 15.1 cm2 V-1 s-1 | — | — | Text Rounded Reported | 4 · Results and Discussion · Figure 2b |
| sheet resistance at 151 nm | ca. 7.1 x 10^6 ohm/sq | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2a |
| sheet resistance at 320 nm | ca. 5.7 x 10^6 ohm/sq | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2a |
| sheet resistance at 510 nm | ca. 4.4 x 10^6 ohm/sq | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2a |
| sheet resistance at 78 nm | ca. 1.04 x 10^7 ohm/sq | — | visual estimate from plotted point | Figure Axis Approximate | 4 · Results and Discussion · Figure 2a |
| minimum sheet resistance at 850 nmMarked as a best value within this paper | 3.7 x 10^6 ohm/sq | — | — | Text Rounded Reported | 4 · Results and Discussion · Figure 2a |