Select metal cation size and electronic structure
Use isostructural series to tune S...S distances, ligand redox hopping and band/VRH behaviour through the metal ion.
Claimed effects: Cation identity can change both magnitude and mechanism of conductivity.
Controlling variables: metal cation identity · ionic radius · electronic configuration · intermolecular contact distance
Representative materials: (H2NMe2)2[M2(C6O4Cl2)3] · M2(TTFTB)
Caveat: Requires genuinely isostructural comparisons; conductivity trends may combine electronic and packing effects.
2246 · 2.1.5 Electronic Structure and Size of Metal Ions · Table 7
Use extended pi-conjugated ligands
Build planar 2D sheets from ligands such as HHB, HHTP, HIB, HITP and BHT to support in-plane conjugation and interlayer contacts.
Claimed effects: Extended conjugation facilitates charge transport and can yield high or metallic-like conductivity in selected 2D MOFs.
Controlling variables: linker core size · metal coordination geometry · layer stacking · measurement orientation · film or crystal morphology
Representative materials: Cu3(HHTP)2 · Ni3(HITP)2 · Ni3(HIB)2 · [Cu3(BHT)]n
Caveat: Conductivity is sensitive to stacking, film thickness, contact geometry and anisotropy; not every conjugated 2D framework is highly conductive.
2240 · 2.1.2 Extended Conjugated Organic Ligands · Table 2
Generate mixed-valence metal centres
Use partial oxidation/reduction or mixed-valence metal frameworks to create low-barrier electron-transfer pathways.
Claimed effects: Mixed-valence states can substantially increase conductivity and reduce activation barriers.
Controlling variables: metal oxidation state · air exposure or chemical oxidation · redox couple identity · activation energy
Representative materials: Fe2(BDT)3 · [Fe(tri)2(BF4)x] · Cu[Cu(pdt)2]
Caveat: Air oxidation or post-synthetic doping may complicate stability and phase/composition assignment.
2246 · 2.1.4 Mixed-Valence Metal Ions · Table 6
Insert electroactive molecular guests
Use guest donors/acceptors such as BEDT-TTF, TCNQ or iodine to alter carrier density or add guest-mediated pathways in pores/interlayers.
Claimed effects: Can yield large conductivity increases while preserving porous host scaffolds.
Controlling variables: guest loading · guest ordering · donor-acceptor interaction · channel geometry · post-synthetic versus in situ incorporation
Representative materials: BEDT-TTF oxalate framework · TCNQ@HKUST-1 · I2@[Zn3(D,L-lac)2(pybz)2]
Caveat: The conductive pathway may be guest-dominated and not intrinsic framework transport; loading uniformity and stability need verification.
2250 · 2.2.2 Molecular Guests · Table 10
Exploit pi-pi stacking interactions
Design frameworks with aromatic ligands close enough to create interchain, interlayer or intraframework pi-pi transport routes.
Claimed effects: Pi-stacked motifs can provide through-space conduction pathways even when metal-ligand overlap is limited.
Controlling variables: aromatic plane distance · interpenetration · desolvation · packing geometry
Representative materials: [Cd(DPNDI)(OH2)4](NO3)1.3.nDMA · [ZnNa2(ABEDBA)2(DEF)2].DEF
Caveat: Through-space contributions may be difficult to disentangle from framework-derived transport and solvent effects.
2247 · 2.1.6 pi...pi Stacking Interactions · Table 8
Polymerise conducting polymers inside MOF channels
Adsorb monomers into pores/channels and oxidatively polymerise them to form PEDOT, PPy or PANI pathways.
Claimed effects: Pore-confined conducting polymers can provide continuous conjugated pathways and dramatically raise conductivity over insulating hosts.
Controlling variables: monomer loading · oxidant/dopant · pore confinement · polymer location · host pore size
Representative materials: PEDOT@MIL-101(Cr) · PPy@UiO-66 · PANI@MIL-101(Cr)
Caveat: At high loading, polymers may cover surfaces rather than remain confined, so transport cannot automatically be assigned to internal MOF channels.
2251 · 2.2.3 Organic Conducting Polymers Guests · Table 11
Incorporate redox-active noninnocent ligands
Use ligands with accessible oxidation states and frontier orbitals matched to transition metals to create mixed-valence/hopping pathways.
Claimed effects: Can create efficient transport through ligand mixed valence and modulate conductivity by changing carrier density and mobility.
Controlling variables: ligand oxidation state · degree of reduction/oxidation · metal-ligand frontier orbital overlap · cation removal/insertion conditions
Representative materials: (NBu4)2[Fe2(dhbq)3] · (Me2NH2)2[Fe2(C6O4Cl2)3] · (Me4N)2[Mn2(C6O4Cl2)3]
Caveat: Reduction does not always improve conductivity; loss of mixed valence or added vacancies may reduce mobility.
2239 · 2.1.1 Incorporation of Redox-Active Ligands · Table 1
Tune hard/soft donor atom-metal overlap
Replace hard donor motifs with softer S, Se or related donor atoms and pair them with suitable transition metals to increase covalency and orbital overlap.
Claimed effects: Better orbital energy matching increases charge delocalisation and through-bond conductivity.
Controlling variables: donor atom identity · metal oxidation state · metal d-orbital energy · M-X chain continuity
Representative materials: [Fe2(DSBDC)] · [Mn2(DSBDC)] · [Cu3(C6Se6)]n
Caveat: Soft donor substitution alone is insufficient if topology, metal identity or framework packing are unfavourable.
2241 · 2.1.3 Use of Hard/Soft Donor Atoms · Table 3
Fabricate oriented or device-compatible conductive MOF films
Use exfoliation, layer-by-layer, interfacial, electrochemical or electrophoretic methods to prepare MOF films on conductive or device substrates.
Claimed effects: Thin-film processing enables device integration and can control thickness, orientation and electrode contact quality.
Controlling variables: substrate functionalisation · film thickness · growth interface · deposition voltage · orientation and continuity
Representative materials: HKUST-1 films · Ni3(HITP)2 thin films · TCNQ@Cu-BTEC films
Caveat: Film measurements are sensitive to substrate, contacts and morphology; device performance does not necessarily prove bulk framework conductivity.
2253 · 4. Thin Film Fabrication of MOFs