| ap-1 as-prepared stacked nickel bis(dithiolene) nanosheetsresearch_0361__mat__ni_bis_dithiolene_pi_nanosheet_1 | Nanosheet · Target Sample · Pristine Framework | As-prepared stacked nanosheets, average nickel bis(dithiolene) oxidation number -3/4. | main p.2, article p.14358 · Redox control and XPS · Figure 2 |
| single-layered ap-1 deposited on HOPG for PESresearch_0361__mat__ni_bis_dithiolene_pi_nanosheet_1 | Thin Film · Target Sample · Pristine Framework | Single-layered ap-1 deposited ten times on HOPG for photoelectron emission spectroscopy.HOPG substrate attached to copper stage with Ag paste and carbon ink masking · single-layered ap-1 deposited 10 times | SI p.S3 · Photoemission spectroscopy · Figure 4 |
| ap-1 single microflake van der Pauw sampleresearch_0361__mat__ni_bis_dithiolene_pi_nanosheet_1 | Nanosheet · Target Sample · Pristine Framework | Microflake deposited from dichloromethane/ethanol suspension; four tungsten tips positioned under SEM for van der Pauw measurement.HMDS-modified p-doped silicon wafer with thermally grown 100 nm SiO2 · 1 um | SI p.S3 · Electrical conductivity measurement · Figures 3 and S5 |
| ox-1 first-principles periodic modelresearch_0361__mat__ni_bis_dithiolene_pi_nanosheet_1 | Model · Model System · Model | DFT-relaxed structure for zero oxidation state ox-1.not_applicable · Periodic model using experimental lattice constants a = b = 14.1 A, c = 7.6 A | SI p.S3 · First principles calculation · Figure 5 |
| ox-1 oxidised nickel bis(dithiolene) nanosheetsresearch_0361__mat__ni_bis_dithiolene_pi_nanosheet_1 | Nanosheet · Target Sample · Doped | Chemically oxidised from ap-1; nickel bis(dithiolene) units assigned to oxidation state 0. | main p.2, article p.14358 · Redox control and XPS · Figures 2-3 |
| ox-1 single microflake van der Pauw sampleresearch_0361__mat__ni_bis_dithiolene_pi_nanosheet_1 | Nanosheet · Target Sample · Doped | Microflake deposited from dichloromethane/ethanol suspension; four tungsten tips positioned under SEM for van der Pauw measurement.HMDS-modified p-doped silicon wafer with thermally grown 100 nm SiO2 · 1 um | SI p.S3 · Electrical conductivity measurement · Figures 3 and S5 |
| red-1 reduced nickel bis(dithiolene) nanosheetsresearch_0361__mat__ni_bis_dithiolene_pi_nanosheet_1 | Nanosheet · Target Sample · Doped | Chemically reduced from ap-1; nickel bis(dithiolene) units assigned to oxidation state -1. | main p.2, article p.14358 · Redox control and XPS · Figure 2 |