SEM-controlled four-probe van der Pauw electrical conductivity
ox-1 single microflake van der Pauw sample · Nanosheet
Home-made four-tip tungsten system under SEM; microflakes on HMDS-modified silicon wafer; measured from low to high temperatures; sample thickness 1 um by AFM.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| ap-1 Arrhenius activation energy from conductivity | 26 meV | 0.026 eV | — | Text Rounded Reported | main p.2, article p.14358 · Electrical conductivity · Figure 3c |
| ap-1 electrical conductivity at 300 K | 2.8 S cm-1 at 300 K | 2.8 S cm-1 | 10% error stated for Figure 3 conductivity | Text Rounded Reported | main p.2, article p.14358 · Electrical conductivity · Figure 3c |
| ap-1 typical V-I resistance at 77 K | 11 kohm | 11000 ohm | — | Caption Rounded Reported | SI p.S8 · S5 Typical V-I plot · Figure S5b |
| ox-1 Arrhenius activation energy from conductivity | 10 meV | 0.01 eV | — | Text Rounded Reported | main p.2, article p.14358 · Electrical conductivity · Figure 3c |
| ox-1 electrical conductivity at 300 KMarked as a best value within this paper | 1.6 x 10^2 S cm-1 at 300 K | 160 S cm-1 | 10% error stated for Figure 3 conductivity | Text Rounded Reported | main p.2, article p.14358 · Electrical conductivity · Figure 3c |
| ox-1 typical V-I resistance at 77 K | 35 ohm | 35 ohm | — | Caption Rounded Reported | SI p.S8 · S5 Typical V-I plot · Figure S5a |
| microflake thickness used for conductivity conversion | 1 um | 1 um | — | Caption Exact Reported | main p.2, article p.14358 · Electrical conductivity · Figure 3 caption |