Reported material

Ag/n-Si and Ag/EC-MOF/n-Si/Al Schottky diode stacks

This group combines only harmless case, dash and spacing variants of the reported identity. It does not assert a broader chemical equivalence without source review.

1primary papers
1material records
5linked samples
8linked measurements
39linked results
2020–2020publication span

Evidence coverage

Paper counts are material-linked through samples and measurements; technique groups are not value rankings.

Publication timeline

Distinct primary papers in this browse group by publication year.

Primary papers

Filter the material-linked paper set while keeping every result in its original dossier.

1 papers

Per-paper identity records

Raw names, formulas and structural assignments remain separate; no consensus value is inferred.

Show 1 material identity record
Paper and reported nameFormula and componentsStructure contextSource
Ag/n-Si and Ag/EC-MOF/n-Si/Al Schottky diode stacks2020 · A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detectionAg / EC-MOF / n-Si / AlNot applicable to the full device stack · Conductive MOF interlayers are Ni3(C18H6(NH)6)2, Cu3(C18H6(NH)6)2, or Cu3(C18H6O6)2unknown · CompositeSandwich-structured Schottky junction devices with semitransparent Ag top electrode and Al back electrode.p005 / article p.9089 · Experimental - Preparation of Ag/EC-MOFs/n-Si/Al photodetector and gas sensing devices · Fig. 3a