| Ag/Cu3(C18H6O6)2/n-Si/Al Schottky diode with 20 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stack | Electrode · Composite Sample · Composite | Cu3(C18H6O6)2 interlayer inserted before Ag evaporation; Al back electrode added.commercial n-type Si (100) wafer · EC-MOF 20 nm; Ag ~20 nm; Al about 50 nm | p004 / article p.9088 · Results and discussion · Fig. S13c and S14, cited in main |
| Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stack | Electrode · Composite Sample · Composite | Cu3(C18H6(NH)6)2 interlayer inserted before Ag evaporation; Al back electrode added. Dense Ag was replaced by window-like Ag for gas sensing.commercial n-type Si (100) wafer · EC-MOF 20 nm; Ag ~20 nm for photodetector or window-like Ag for gas sensing; Al about 50 nm | p004 / article p.9088 · Results and discussion · Fig. 4 |
| Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 40 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stack | Electrode · Composite Sample · Composite | Thicker Cu3(C18H6(NH)6)2 interlayer device used to test transport limitation.commercial n-type Si (100) wafer · EC-MOF 40 nm; Ag ~20 nm; Al about 50 nm | p004 / article p.9088 · Results and discussion · Fig. S13d and S14, cited in main |
| Ag/Ni3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stack | Electrode · Composite Sample · Composite | Ni3(C18H6(NH)6)2 interlayer inserted before Ag evaporation; Al back electrode added.commercial n-type Si (100) wafer · EC-MOF 20 nm; Ag ~20 nm; Al about 50 nm | p003 / article p.9087 · Results and discussion · Fig. 4a-b |
| Ag/n-Si/Al control Schottky dioderesearch_0340__mat__mat_ag_nsi_schottky_stack | Electrode · Model System · Model | Semitransparent Ag top electrode thermally evaporated on n-Si; Al back electrode evaporated on the back side.commercial n-type Si (100) wafer · Ag ~20 nm; Al about 50 nm | p005 / article p.9089 · Experimental - Preparation of Ag/EC-MOFs/n-Si/Al photodetector and gas sensing devices · Fig. 3c |
| Cu3(C18H6O6)2 20 nm thin filmresearch_0340__mat__mat_cu_hhtp | Thin Film · Pristine Control · Pristine Framework | Same LBL spray route as Cu3(C18H6(NH)6)2 except HHTP ligand and no ammonium hydroxide; ten deposition cycles.Functionalised n-Si substrate in device context · 20 nm | p005 / article p.9089 · Experimental - Preparation of the Cu3(C18H6O6)2 thin film |
| Cu3(C18H6(NH)6)2-100 nm thin filmresearch_0340__mat__mat_cu_hitp | Thin Film · Pristine Control · Pristine Framework | Layer-by-layer liquid-phase epitaxy spray film with thickness controlled by deposition cycles.not specified in the FTIR result; quartz substrates used for UV-vis measurements · 100 nm | p002 / article p.9086 · Results and discussion · Fig. 2e |
| Cu3(C18H6(NH)6)2-20 nm thin film on functionalised n-Siresearch_0340__mat__mat_cu_hitp | Thin Film · Target Sample · Pristine Framework | Layer-by-layer liquid-phase epitaxy spray film; rinsed with ethanol and dried by N2 between deposition steps.Functionalised n-type Si substrate; quartz substrates also used for UV-vis measurements · 20 nm | p002 / article p.9086 · Results and discussion · Fig. 2 |
| Cu3(C18H6(NH)6)2-x nm thin-film series (x = 40, 60, 80, 100)research_0340__mat__mat_cu_hitp | Thin Film · Target Sample · Pristine Framework | Layer-by-layer liquid-phase epitaxy spray films with thickness controlled by deposition cycles.functionalised n-Si substrates for SEM/AFM thickness series · 40, 60, 80, and 100 nm | p007 · Figure captions · Fig. S7 and Fig. S8 |
| Cu3(C18H6(NH)6)2 powderresearch_0340__mat__mat_cu_hitp | Powder · Pristine Control · Pristine Framework | Room-temperature aqueous precipitation followed by washing and vacuum drying. | p005 / article p.9089 · Experimental - Preparation of Cu3(C18H6(NH)6)2 powders · Fig. 2e |
| Ni3(C18H6(NH)6)2 20 nm thin filmresearch_0340__mat__mat_ni_hitp | Thin Film · Pristine Control · Pristine Framework | Black-blue film formed at the air/liquid interface by heating HITP/NiCl2 aqueous solution and adding ammonium hydroxide.not specified for air/liquid film in main experimental section; used on n-Si in device context · 20 nm | p005 / article p.9089 · Experimental - Preparation of Ni3(C18H6(NH)6)2 thin films |