Primary studyCore evidenceThin Film Device

A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

Cao L.-A., Yao M.-S., Jiang H.-J. et al. · Journal of Materials Chemistry A · 2020 · 9085-9090

5materials
11samples
5synthesis routes
22measurements
65results
6claims and caveats

Evidence map

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Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: Medium

The porous, highly oriented Cu3(C18H6(NH)6)2 interlayer enables zero-bias photo-assisted gas sensing, with selectivity strongest for NH3.

Caveat: Non-NH3 selectivity values are visual estimates from Fig. 4f because exact numbers are not printed in the main text.

p004 / article p.9088 · Results and discussion · Fig. 4e-f · Linked to 5 structured results

Application RelevanceSupport assessment: High

The Ag/Cu3(C18H6(NH)6)2/n-Si/Al diode operates as a self-powered photodetector with high EQE, broad spectral range, high on-off ratio, and fast rise/fall times.

Caveat: The cross-literature leaderboard comparison is in missing Table S1 and cannot be independently checked from the assigned main article alone.

p004 / article p.9088 · Conclusions · Fig. 4; Table S1 cited · Linked to 6 structured results

Phase AssignmentSupport assessment: High

The LBL-grown Cu3(C18H6(NH)6)2-20 nm film is crystalline pure-phase and highly oriented with 1D channels perpendicular to the substrate.

Caveat: Assigned from main-text interpretation of GIXRD; raw diffraction data and SI figures are not available.

p003 / article p.9087 · Results and discussion · Fig. 2f · Linked to 2 structured results

Structure Property LinkSupport assessment: High

Substituting EC-MOF composition tunes work function and Schottky barrier height in Ag/EC-MOF/n-Si junctions.

Caveat: Thermionic-emission calculation details are in the assigned SI.

p003 / article p.9087 · Results and discussion · Fig. 3b-d · Linked to 6 structured results

Synthesis MechanismSupport assessment: Medium

The paper reports the first preparation of a Cu3(C18H6(NH)6)2 thin film by LBL liquid-phase epitaxy.

Caveat: Novelty claim is accepted from the article text; no external literature check was performed.

p002 / article p.9086 · Results and discussion · Fig. 2 · Linked to 2 structured results

Transport MechanismSupport assessment: Medium

The 20 nm Cu3(C18H6(NH)6)2 interlayer balances increased Schottky barrier with carrier transport because its thickness is below the reported carrier diffusion length.

Caveat: Carrier diffusion length and series-resistance calculation details are in the assigned SI.

p004 / article p.9088 · Results and discussion · Fig. S14-S15 cited · Linked to 4 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
Ag/n-Si and Ag/EC-MOF/n-Si/Al Schottky diode stacksAg / EC-MOF / n-Si / AlNot applicable to the full device stack · Conductive MOF interlayers are Ni3(C18H6(NH)6)2, Cu3(C18H6(NH)6)2, or Cu3(C18H6O6)2unknown · CompositeSandwich-structured Schottky junction devices with semitransparent Ag top electrode and Al back electrode.p005 / article p.9089 · Experimental - Preparation of Ag/EC-MOFs/n-Si/Al photodetector and gas sensing devices · Fig. 3a
Cu3(C18H6O6)2 conductive MOFCu3(C18H6O6)2Cu nodes from copper acetate monohydrate · HHTP / 2,3,6,7,10,11-hexahydroxytriphenylene2D · PristineTriphenylene-based isostructural graphene-like honeycomb EC-MOF thin film.p005 / article p.9089 · Experimental - Preparation of the Cu3(C18H6O6)2 thin film
Cu3(C18H6(NH)6)2 conductive MOFCu3(C18H6(NH)6)2Cu nodes from copper acetate monohydrate or copper sulfate pentahydrate · HITP / 2,3,6,7,10,11-hexaaminotriphenylene2D · PristineCrystalline pure-phase, highly oriented graphene-like honeycomb EC-MOF; 1D channel perpendicular to substrate in the 20 nm film.p003 / article p.9087 · Results and discussion · Fig. 2f
Triphenylene-based electronically conductive MOF family M3(C18H6X6)2M3(C18H6X6)2 where M = Ni or Cu and X = O or NHNi or Cu nodes · Triphenylene-based C18H6X6 linkers; X = NH for HITP-derived frameworks and X = O for HHTP-derived frameworks2D · PristineIsostructural graphene-like honeycomb porous EC-MOFs.p002 / article p.9086 · Results and discussion · Fig. 1
Ni3(C18H6(NH)6)2 conductive MOFNi3(C18H6(NH)6)2Ni nodes from nickel chloride hexahydrate · HITP / 2,3,6,7,10,11-hexaaminotriphenylene2D · PristineTriphenylene-based isostructural graphene-like honeycomb EC-MOF thin film.p002 / article p.9086 · Results and discussion · Fig. 1

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 11 sample records
SampleForm and roleProcessing and geometrySource
Ag/Cu3(C18H6O6)2/n-Si/Al Schottky diode with 20 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stackElectrode · Composite Sample · CompositeCu3(C18H6O6)2 interlayer inserted before Ag evaporation; Al back electrode added.commercial n-type Si (100) wafer · EC-MOF 20 nm; Ag ~20 nm; Al about 50 nmp004 / article p.9088 · Results and discussion · Fig. S13c and S14, cited in main
Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stackElectrode · Composite Sample · CompositeCu3(C18H6(NH)6)2 interlayer inserted before Ag evaporation; Al back electrode added. Dense Ag was replaced by window-like Ag for gas sensing.commercial n-type Si (100) wafer · EC-MOF 20 nm; Ag ~20 nm for photodetector or window-like Ag for gas sensing; Al about 50 nmp004 / article p.9088 · Results and discussion · Fig. 4
Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 40 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stackElectrode · Composite Sample · CompositeThicker Cu3(C18H6(NH)6)2 interlayer device used to test transport limitation.commercial n-type Si (100) wafer · EC-MOF 40 nm; Ag ~20 nm; Al about 50 nmp004 / article p.9088 · Results and discussion · Fig. S13d and S14, cited in main
Ag/Ni3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOFresearch_0340__mat__mat_ag_nsi_schottky_stackElectrode · Composite Sample · CompositeNi3(C18H6(NH)6)2 interlayer inserted before Ag evaporation; Al back electrode added.commercial n-type Si (100) wafer · EC-MOF 20 nm; Ag ~20 nm; Al about 50 nmp003 / article p.9087 · Results and discussion · Fig. 4a-b
Ag/n-Si/Al control Schottky dioderesearch_0340__mat__mat_ag_nsi_schottky_stackElectrode · Model System · ModelSemitransparent Ag top electrode thermally evaporated on n-Si; Al back electrode evaporated on the back side.commercial n-type Si (100) wafer · Ag ~20 nm; Al about 50 nmp005 / article p.9089 · Experimental - Preparation of Ag/EC-MOFs/n-Si/Al photodetector and gas sensing devices · Fig. 3c
Cu3(C18H6O6)2 20 nm thin filmresearch_0340__mat__mat_cu_hhtpThin Film · Pristine Control · Pristine FrameworkSame LBL spray route as Cu3(C18H6(NH)6)2 except HHTP ligand and no ammonium hydroxide; ten deposition cycles.Functionalised n-Si substrate in device context · 20 nmp005 / article p.9089 · Experimental - Preparation of the Cu3(C18H6O6)2 thin film
Cu3(C18H6(NH)6)2-100 nm thin filmresearch_0340__mat__mat_cu_hitpThin Film · Pristine Control · Pristine FrameworkLayer-by-layer liquid-phase epitaxy spray film with thickness controlled by deposition cycles.not specified in the FTIR result; quartz substrates used for UV-vis measurements · 100 nmp002 / article p.9086 · Results and discussion · Fig. 2e
Cu3(C18H6(NH)6)2-20 nm thin film on functionalised n-Siresearch_0340__mat__mat_cu_hitpThin Film · Target Sample · Pristine FrameworkLayer-by-layer liquid-phase epitaxy spray film; rinsed with ethanol and dried by N2 between deposition steps.Functionalised n-type Si substrate; quartz substrates also used for UV-vis measurements · 20 nmp002 / article p.9086 · Results and discussion · Fig. 2
Cu3(C18H6(NH)6)2-x nm thin-film series (x = 40, 60, 80, 100)research_0340__mat__mat_cu_hitpThin Film · Target Sample · Pristine FrameworkLayer-by-layer liquid-phase epitaxy spray films with thickness controlled by deposition cycles.functionalised n-Si substrates for SEM/AFM thickness series · 40, 60, 80, and 100 nmp007 · Figure captions · Fig. S7 and Fig. S8
Cu3(C18H6(NH)6)2 powderresearch_0340__mat__mat_cu_hitpPowder · Pristine Control · Pristine FrameworkRoom-temperature aqueous precipitation followed by washing and vacuum drying.p005 / article p.9089 · Experimental - Preparation of Cu3(C18H6(NH)6)2 powders · Fig. 2e
Ni3(C18H6(NH)6)2 20 nm thin filmresearch_0340__mat__mat_ni_hitpThin Film · Pristine Control · Pristine FrameworkBlack-blue film formed at the air/liquid interface by heating HITP/NiCl2 aqueous solution and adding ammonium hydroxide.not specified for air/liquid film in main experimental section; used on n-Si in device context · 20 nmp005 / article p.9089 · Experimental - Preparation of Ni3(C18H6(NH)6)2 thin films