Electrical Transport — A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

5 measurement groups · 18 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Hall measurement and impedance spectroscopy

Impedance spectroscopy Hall-effect measurements

Cu3(C18H6(NH)6)2-20 nm thin film on functionalised n-Si · Thin Film

Carrier diffusion length in Cu3(C18H6(NH)6)2 derived from Hall and impedance spectroscopy; Hall test performed on Lake Shore 8404 Hall Effect System.

Geometry: Cu3(C18H6(NH)6)2 thin-film interlayer
Context: pristine EC-MOF interlayer in device context
Measurement source: p004 / article p.9088 · Results and discussion · Fig. S15, cited in main

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Carrier diffusion length in Cu3(C18H6(NH)6)2	27.3 nm	—	—	Text Exact Reported	p004 / article p.9088 · Results and discussion · Fig. S15 cited in main

Impedance spectroscopy and Hall measurement

Impedance spectroscopy Hall-effect measurements

Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOF · Electrode

Impedance measured from 1 Hz to 1 MHz with 10 mV oscillation amplitude and 0 V DC under 450 nm light; Hall mobility used for carrier diffusion length calculation.

Geometry: Ag/Cu3(C18H6(NH)6)2/n-Si/Al
Context: device stack with pristine Cu3(C18H6(NH)6)2 interlayer
Measurement source: p001-p002 · Impedance Spectroscopy Measurement · Fig. S15

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(C18H6(NH)6)2 carrier mobility	0.02 cm2 V-1 s-1	—	—	Text Exact Reported	p002 · Impedance Spectroscopy Measurement · Fig. S15
Carrier lifetime under 450 nm illumination	0.12 microseconds	—	—	Text Exact Reported	p002 · Impedance Spectroscopy Measurement · Fig. S15

Current-voltage measurement and thermionic-emission Schottky-barrier calculation

Electrical conductivity

Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOF · Electrode

I-V curves of Ag/n-Si/Al and Ag/EC-MOF-20 nm/n-Si/Al sandwich devices; Al back electrode forms ohmic contact with n-Si.

Geometry: Ag/EC-MOF/n-Si/Al sandwich-structured diode
Context: device stacks with pristine EC-MOF interlayers
Measurement source: p003 / article p.9087 · Results and discussion · Fig. 3c-d

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Schottky barrier height for Ag/Cu3(C18H6O6)2/n-SiMarked as a best value within this paper	1.01 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3d
Schottky barrier height for Ag/Cu3(C18H6(NH)6)2/n-Si	0.95 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3d
Schottky barrier height for Ag/Ni3(C18H6(NH)6)2/n-Si	0.92 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3d
Schottky barrier height for Ag/n-Si	0.67 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3d
Schottky barrier height for 40 nm Ag/Cu3(C18H6(NH)6)2/n-Si deviceMarked as a best value within this paper	1.11 eV	—	—	Text Exact Reported	p004 / article p.9088 · Results and discussion · Fig. S13d and S14, cited in main

Kelvin probe force microscopy (KPFM)

Cu3(C18H6(NH)6)2-20 nm thin film on functionalised n-Si · Thin Film

KPFM in air at room temperature using HOPG reference work function 4.48 eV; work functions reported for Ag, EC-MOFs, and Ag/EC-MOFs.

Temperature: room temperature
Atmosphere: air
Geometry: EC-MOF films and Ag/EC-MOF surfaces
Context: pristine EC-MOF films and Ag/EC-MOF interfaces
Measurement source: p003 / article p.9087 · Results and discussion · Fig. 3b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Work function of Ag/Cu3(C18H6O6)2Marked as a best value within this paper	4.55 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3b
Work function of Ag/Cu3(C18H6(NH)6)2	4.38 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3b
Work function of Ag/Ni3(C18H6(NH)6)2	4.29 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3b
Work function of pristine Ag	4.23 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3b
Work function of Cu3(C18H6O6)2Marked as a best value within this paper	4.98 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3b
Work function of Cu3(C18H6(NH)6)2	4.69 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3b
Work function of Ni3(C18H6(NH)6)2	4.59 eV	—	—	Text Exact Reported	p003 / article p.9087 · Results and discussion · Fig. 3b

Series-resistance calculation from device data

Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOF · Electrode

Series resistance values calculated with details in missing Fig. S14/ESI; compared across Cu3(C18H6(NH)6)2, Cu3(C18H6O6)2, and thicker Cu3(C18H6(NH)6)2 devices.

Geometry: Ag/EC-MOF/n-Si/Al
Context: device stacks with EC-MOF interlayers
Measurement source: p004 / article p.9088 · Results and discussion · Fig. S14, cited in main

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Series resistance of Ag/Cu3(C18H6O6)2/n-Si/Al	31 254 ohm	—	—	Text Exact Reported	p004 / article p.9088 · Results and discussion · Fig. S14 cited in main
Series resistance of Ag/Cu3(C18H6(NH)6)2/n-Si/AlMarked as a best value within this paper	254 ohm	—	—	Text Exact Reported	p004 / article p.9088 · Results and discussion · Fig. S14 cited in main
Series resistance of 40 nm Ag/Cu3(C18H6(NH)6)2/n-Si/Al	18 865 ohm	—	—	Text Exact Reported	p004 / article p.9088 · Results and discussion · Fig. S13d and S14 cited in main