Electrochemistry Application — A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

Measurement evidence

Electrochemistry Application

A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection · Cao L.-A., Yao M.-S., Jiang H.-J. et al. · Journal of Materials Chemistry A · 2020 · 9085-9090

3 measurement groups · 13 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Zero-bias photodetection control

Ag/n-Si/Al control Schottky diode · Electrode

Ag/n-Si/Al control diode at zero bias voltage under light of different wavelengths.

Geometry
Ag/n-Si/Al
Context
control device without EC-MOF
Measurement source
p003 / article p.9087 · Results and discussion · Fig. 1b and S13a, cited in main
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Zero-bias Ag/n-Si/Al photoresponseno response to light of any wavelengthText
Qualitative
p003 / article p.9087 · Results and discussion · Fig. 1b and S13a, cited in main

Self-powered photodetection measurement

Ag/Cu3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOF · Electrode

Photodetection at 0 V bias under wavelength-dependent illumination; detailed setup used Keithley 4200 SCS, Lake Shore probe station, and Quanta Master fibre optic spectrometer light source.

Geometry
Ag/Cu3(C18H6(NH)6)2/n-Si/Al
Context
application device with pristine EC-MOF interlayer
Measurement source
p003 / article p.9087 · Results and discussion · Fig. 4a-d
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Cu3(C18H6O6)2 device zero-bias photosensingalmost no photosensing ability at a zero bias voltageText
Qualitative
p004 / article p.9088 · Results and discussion · Fig. S13c cited in main
Specific detectivity3.2 x 10^11 JonesText
Exact Reported
p004 / article p.9088 · Results and discussion · Fig. 4d
External quantum efficiency at 450 nm, 0 VMarked as a best value within this paper84%0.84 fractionText
Exact Reported
p003 / article p.9087 · Results and discussion · Fig. 4a; Table S1 cited
Fall time30 ms / 0.03 s0.03 sText
Exact Reported
p004 / article p.9088 · Results and discussion · Fig. 4c
On-off ratio at 450 nm, 0 VMarked as a best value within this paper533Text
Exact Reported
p003 / article p.9087 · Results and discussion · Fig. 4a
Photodetection switching repeatability10 cycles with little performance degradationText
Exact Reported
p004 / article p.9088 · Results and discussion · Fig. 4d
Responsivity at 450 nm, 0 VMarked as a best value within this paper300 mA W-10.3 A W-1Text
Exact Reported
p003 / article p.9087 · Results and discussion · Fig. 4b
Rise time7 ms / 0.007 s0.007 sText
Exact Reported
p004 / article p.9088 · Results and discussion · Fig. 4c
Detectable spectrum rangeMarked as a best value within this paper250-1500 nmText
Range
p001 / article p.9085 · Abstract · Fig. 4a

Self-powered photodetection measurement

Ag/Ni3(C18H6(NH)6)2/n-Si/Al Schottky diode with 20 nm EC-MOF · Electrode

Keithley 4200 SCS semiconductor parameter analyser and Lake Shore probe station; Quanta Master fibre optic spectrometer light source; 450 nm wavelength, 0 V bias for reported metrics.

Geometry
Ag/Ni3(C18H6(NH)6)2/n-Si/Al
Context
application device with pristine EC-MOF interlayer
Measurement source
p003 / article p.9087 · Results and discussion · Fig. 4a-b
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
External quantum efficiency at 450 nm, 0 V1.5%0.015 fractionText
Exact Reported
p003 / article p.9087 · Results and discussion · Fig. 4a
On-off ratio at 450 nm, 0 V2.2Text
Exact Reported
p003 / article p.9087 · Results and discussion · Fig. 4a and S13b
Responsivity at 450 nm, 0 V5 mA W-10.005 A W-1Text
Exact Reported
p003 / article p.9087 · Results and discussion · Fig. 4a-b