Diffraction Structure — A highly oriented conductive MOF thin film-based Schottky diode for self-powered light and gas detection

4 measurement groups · 5 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cu3(C18H6(NH)6)2-20 nm thin film on functionalised n-Si · Thin Film

Out-of-plane and in-plane GIXRD; X-ray wavelength 1.0000 A, in-plane incident angle 0.12, exposure time 20 s.

Geometry: 20 nm film
Context: pristine EC-MOF thin film
Measurement source: p003 / article p.9087 · Results and discussion; Experimental - Characterization · Fig. 2f

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Film orientation	1D channel perpendicular to the substrate	—	—	Text Qualitative	p003 / article p.9087 · Results and discussion · Fig. 2f
GIXRD phase assignment	crystalline pure-phase Cu3(C18H6(NH)6)2	—	—	Text Qualitative	p003 / article p.9087 · Results and discussion · Fig. 2f

Cu3(C18H6O6)2 20 nm thin film · Thin Film

HR-TEM image of Cu3(C18H6O6)2 thin film.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(C18H6O6)2 lamellar film morphology	distinct lamellar film	—	—	Qualitative Qualitative	p005 · Figure S4 paragraph · Fig. S4c

Cu3(C18H6(NH)6)2-20 nm thin film on functionalised n-Si · Thin Film

HR-TEM image of Cu3(C18H6(NH)6)2 thin film.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu3(C18H6(NH)6)2 lamellar film morphology	distinct lamellar film	—	—	Qualitative Qualitative	p005 · Figure S4 paragraph · Fig. S4b

Ni3(C18H6(NH)6)2 20 nm thin film · Thin Film

HR-TEM image of Ni3(C18H6(NH)6)2 thin film; lattice fringe spacing reported in SI text.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Ni3(C18H6(NH)6)2 lattice fringe spacing	1.8 nm	—	—	Text Exact Reported	p005 · Figure S4 paragraph · Fig. S4a