DFT electronic band structure and density of states using VASP 5.4.4, GGA-PBEsol and HSEsol06 band-gap correction
Ga9(HOTP)4 HOTP4- electronic-structure model · Model
Unrestricted GGA-PBEsol, 500 eV plane-wave cutoff; ionic convergence 0.005 eV A-1 and electronic convergence 1e-6 eV; Gamma-only optimisation; 2x2x2 single-point k-grid for EBS/DOS; HSEsol06 Gamma-point single point used to adjust band gap.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| DFT band-dispersion anisotropy | Bands along A-Gamma are more dispersed than those along Gamma-K-M | — | — | Caption Qualitative | main p.229 · Figure caption · Figure 5A |
| Calculated electronic band gapMarked as a best value within this paper | 0.38 eV | 0.38 eV | — | Caption Exact Reported | main p.229 · Figure caption · Figure 5A |
| DFT plane-wave cutoff | 500 eV | 500 eV | — | Text Exact Reported | SI p.7 · Computational methods |
| Frontier-band orbital character | Frontier bands composed exclusively of ligand carbon- and oxygen-originated orbitals | — | — | Caption Qualitative | main p.229 · Figure caption · Figure 5A |
| Rejected HOTP3- model behaviour | unrealistic metallic band structure with many nearly flat bands at and around the Fermi level | — | — | Text Qualitative | SI p.6 · Computational methods |