Electrical Transport — Millimeter-scale semiconductive metal-organic framework single crystal for X-ray imaging

3 measurement groups · 9 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

SCU-15 SC device · Single Crystal

SCU-15 SC and SCU-15 PP bias-dependent photocurrent curves fitted to obtain carrier mobility-lifetime product and diffusion length.

Geometry: Ag-contacted single-crystal and pellet X-ray detector devices
Context: pristine SCU-15 single-crystal device and pristine SCU-15 pellet device
Measurement source: main p.6 and p.10 · Comparison of optoelectronic properties; Charge mobility and mt calculations · Figures 4E-4F

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
SCU-15 SC mu_tau improvement over PP	nearly five times higher than pelleted polycrystalline device	—	—	Text Approximate	main p.6 · Comparison of optoelectronic properties · Figures 4E-4F
SCU-15 PP carrier diffusion length	34.2 um	—	—	Text Exact Reported	main p.6 · Comparison of optoelectronic properties · Figure 4F
SCU-15 PP charge-carrier mobility-lifetime product	4.78 x 10^-4 cm2 V^-1	—	—	Text Exact Reported	main p.6 · Comparison of optoelectronic properties · Figure 4F; Table S4
SCU-15 SC carrier diffusion lengthMarked as a best value within this paper	74.8 um	—	—	Text Exact Reported	main p.6 · Comparison of optoelectronic properties · Figure 4E
SCU-15 SC charge-carrier mobility-lifetime productMarked as a best value within this paper	2.18 x 10^-3 cm2 V^-1	—	—	Text Exact Reported	main p.6 · Comparison of optoelectronic properties · Figure 4E; Table S4

SCU-15 SC device · Single Crystal

Dark I-V curves from -10 V to 10 V with 0.2 V sweeping step; SCU-15 SC and SCU-15 PP compared.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
SCU-15 PP resistivity	4.79 x 10^12 Ohm cm	—	—	Text Exact Reported	main p.5 · Comparison of optoelectronic properties · Figure S13; Table S4
SCU-15 SC bulk resistivity	6.18 x 10^11 Ohm cm	—	—	Text Exact Reported	main p.5 · Comparison of optoelectronic properties · Figure S13; Table S4

SCU-15 SC device · Single Crystal

SCU-15 SC I-V curves from -4 to +4 V under X-ray irradiation with different tube voltages and currents; tungsten anode RAD SOURCE RS 2000X.

Geometry: vertical photoconductor in cathode irradiation configuration; Ag/SCU-15 single crystal/Ag
Context: pristine SCU-15 single-crystal device
Measurement source: main p.5 and p.10 · Comparison of optoelectronic properties; X-ray detection measurement · Figure 4D

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
SCU-15 SC I-V behaviour under X-ray	Linear dependence; Ohmic contact between single crystal and electrodes	—	—	Text Qualitative	main p.5 · Comparison of optoelectronic properties · Figure 4D
SCU-15 SC I-V sweep range under X-ray	-4 to +4 V	—	—	Text Exact Reported	main p.5 · Comparison of optoelectronic properties · Figure 4D