Partial recipeSource: Both
Route 1: Liquid Liquid Interface
Supplementary Methods 1.3 Preparation of Ag-MOF
Metal precursorsAgNO3 aqueous solution: 25.5 mg AgNO3 in 1 mL aqueous solution, injected into water using a syringe pump.
Linker precursorsbenzenehexathiol (BHT) in toluene: 0.1 mM BHT/toluene solution, 50 mL.
Solvents30 mL deionised water aqueous layer; 50 mL toluene BHT layer.
Additivesnone reported for Ag-MOF growth; substrate/device processing used piranha solution, O2 plasma, Cr/Au and SU8 photoresist.
Atmospherenot specified
Temperature50
Time1
Substrate orientationAg-MOF formed at a toluene-water liquid-liquid interface and was transferred to hydrophilic pretreated Si/SiO2 by Langmuir-Schaefer technique; device samples used Cr/Au-patterned 2 x 2 cm silicon wafers.
Oxidant / reductantnone intentionally specified for MOF growth; piranha substrate treatment used H2SO4/H2O2 before transfer/device fabrication.
Work-upAfter growth, the silicon wafer was carefully extracted with tweezers. Device fabrication used hydrophilic Si/SiO2 cleaned with DI water, ethanol and acetone; piranha solution H2SO4/H2O2 2:1 for 6 h at room temperature; ultrasonic DI water/ethanol 5 min; nitrogen purge; O2 plasma 100 W for 2 min; Cr/Au 5/30 nm thermal evaporation, SU8 coating, UV-lithography 100 x 200 um window, and 120 C vacuum oven for 5 h.
ActivationNo separate MOF activation reported; microdevices were baked in vacuum oven at 120 C for 5 h after SU8 lithography.
Scalability contextMorphology controlled by reaction time at the confined liquid-liquid interface; no yield or scale-up data reported beyond 100 mL vial, 30 mL water and 50 mL toluene solution.
Show 8 structured reagent records
| Role | Reagent | Amount / concentration | Source |
|---|---|---|---|
| Metal Source | Silver nitrate (AgNO3, 98%, Aldrich) | 25.5 mg in 1 mL aqueous solution | Supplementary Methods 1.3 Preparation of Ag-MOF |
| Linker | benzenehexathiol (BHT) | 50 mL toluene solution · 0.1 mM | Supplementary Methods 1.3 Preparation of Ag-MOF |
| Solvent | deionized water | 30 mL in 100 mL vial | Supplementary Methods 1.3 Preparation of Ag-MOF |
| Solvent | toluene (99.8%, Aldrich) | 50 mL | Supplementary Methods 1.3 Preparation of Ag-MOF |
| Acid | H2SO4 in piranha solution for substrate pretreatment | 2:1 H2SO4/H2O2 mixture; 6 h room temperature · 95-98% H2SO4 | Supplementary Methods 1.3 Preparation of Ag-MOF |
| Oxidant | H2O2 in piranha solution for substrate pretreatment | 2:1 H2SO4/H2O2 mixture; 6 h room temperature · 30% H2O2 | Supplementary Methods 1.3 Preparation of Ag-MOF |
| Other | Si/SiO2 wafer substrate | 2 x 2 cm | Supplementary Methods 1.3 Preparation of Ag-MOF |
| Other | SU8 photoresist for microdevice patterning | spin-coated; 100 x 200 um window etched | Supplementary Methods 1.3 Preparation of Ag-MOF |