Electrical Transport — Synthesis and structure of a non-van-der-Waals two-dimensional coordination polymer with superconductivity

4 measurement groups · 12 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Cu3BHT single-crystal four-probe device · Electrode

Out-of-plane I-V curves from Cu3BHT single-crystal device at room temperature.

Temperature: 300
Geometry: Ti/Au electrodes perpendicular to crystal long axis; out-of-plane [001]/c-axis transport
Context: pristine single-crystal Cu3BHT device
Measurement source: 3 · Single crystal device characterization · Figure 2b

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Room-temperature I-V contact behaviour	linear voltage-current behaviour; negligible two-probe/four-probe difference	—	—	Qualitative Qualitative	3 · Single crystal device characterization · Figure 2b

Cu3BHT single-crystal four-probe device · Electrode

Resistance change measured at 1.7 K with magnetic field orientation aligned with the current direction; figure axis spans about -9 to +9 T.

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Positive magnetoresistance at 1.7 K	approximately 2% increase	—	approximately	Text Approximate	4 · Single crystal device characterization · Figure 2e

Cu3BHT single-crystal four-probe device · Electrode

Quantum Design PPMS DynaCool with Electrical Transport Option; 0.05-1 K; magnetic field 0-1 T applied along ab plane and supercurrent along c-axis.

Temperature: 0.05-1
Geometry: Custom four-contact probe cell, out-of-plane current
Context: pristine single-crystal Cu3BHT device
Measurement source: 7 · Device fabrication / superconductivity · Figure 3d-f; Supplementary Fig. 20

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Superconducting coherence lengthMarked as a best value within this paper	47 nm	—	—	Text Rounded Reported	5 · Superconductivity characterization and magnetic properties · Figure 3f
Zero-temperature upper critical magnetic fieldMarked as a best value within this paper	0.15 T	—	—	Text Rounded Reported	5 · Superconductivity characterization and magnetic properties · Figure 3f
Superconducting transition temperatureMarked as a best value within this paper	0.25 K	—	—	Text Rounded Reported	5 · Superconductivity characterization and magnetic properties · Figure 3d
Field suppression of superconductivity	At a magnetic field of 1 T, superconductivity completely vanishes	—	—	Text Rounded Reported	5 · Superconductivity characterization and magnetic properties · Figure 3e
Superconducting transition widthMarked as a best value within this paper	Delta Tc of 40 mK	—	—	Text Exact Reported	5 · Superconductivity characterization and magnetic properties · Figure 3d

Cu3BHT single-crystal four-probe device · Electrode

Variable-temperature single-crystal device measurements from 2 to 300 K using attoDRY 2100 with SR830 lock-in amplifier.

Temperature: 2-300
Geometry: Four-probe out-of-plane single-crystal device
Context: pristine single-crystal Cu3BHT device
Measurement source: 4 · Single crystal device characterization · Figure 2c,d; Supplementary Figs. 15-16

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Out-of-plane electrical conductivity at 2 KMarked as a best value within this paper	10^4 S/cm at 2 K	—	—	Text Rounded Reported	3 · Single crystal device characterization · Figure 2b,c
Out-of-plane electrical conductivity at 300 K	approximately 10^3 S/cm at 300 K	—	approximately	Text Approximate	3 · Single crystal device characterization · Figure 2b,c
Residual-resistance ratioMarked as a best value within this paper	RRR value reaching up to 10	—	up to	Text Approximate	4 · Single crystal device characterization · Figure 2c
Linear resistivity regime	rho proportional to T between 20 and 100 K	—	—	Text Range	4 · Single crystal device characterization · Figure 2d
High-temperature resistivity power law exponent	rho proportional to T^0.31 above 100 K	—	—	Text Rounded Reported	4 · Single crystal device characterization · Figure 2d