Measurement evidence
High Thermopower in a Zn-Based 3D Semiconductive Metal-Organic Framework · Park J., Hinckley A.C., Huang Z. et al. · Journal of the American Chemical Society · 2020 · 20531-20535
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
Zn-HAB_NEt3 / TEA 9 equiv as-synthesised powder · Powder
Riken AC-2 photoelectron spectrometer; measured in air.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| HOMO levelMarked as a best value within this paper | 4.54 eV | — | — | Text Exact Reported | 3 · Electrical properties · Figure 3c |
Zn-HAB drop-cast film on glass · Thin Film
Drop-cast Zn-HAB film on glass measured after drying.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Band gap stated in abstract | approximately 1.68 eV | — | — | Text Approximate | 1 · Abstract |
| Optical absorption edge / band gapMarked as a best value within this paper | around 1.82 eV | — | — | Text Approximate | 3 · Electronic structure · Figure 3b |
Zn-HAB_NEt3 / TEA 9 equiv as-synthesised powder · Powder
PHI Versaprobe III with Al Ka radiation; high-resolution C 1s and Zn Auger scans.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| C 1s peak position | 285.8 eV | — | — | Text Exact Reported | 3 · Structure characterisation · Figure 3d |
| Partially oxidized Zn peak | 495.6 eV | — | — | Text Exact Reported | 3 · Structure characterisation · Figure 3e |
| Zn Auger peak position | 499.0 eV | — | — | Text Exact Reported | 3 · Structure characterisation · Figure 3e |