Electrical Transport — Unique Thermoelectric Properties Induced by Intrinsic Nanostructuring in a Polycrystalline Thin-Film Two-Dimensional Metal–Organic Framework, Copper Benzenehexathiol

Measurement evidence

Electrical Transport

Unique Thermoelectric Properties Induced by Intrinsic Nanostructuring in a Polycrystalline Thin-Film Two-Dimensional Metal–Organic Framework, Copper Benzenehexathiol · Tsuchikawa R., Lotfizadeh N., Lahiri N. et al. · Physica Status Solidi (A) Applications and Materials Science · 2020 · 2000437

14 measurement groups · 57 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

regular four-terminal electrical conductivity

Cu-BHT four-terminal electrical devices 1-4 · Thin Film

Electrical conductivity measured as a function of temperature for Devices 1-4.

Temperature
approximately 0-300 K
Geometry
four-terminal Cu-BHT thin-film devices
Context
pristine Cu-BHT thin films
Measurement source
rendered page 4 / article p.2000437-4 · Results and Discussion · Figure 3a
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Device 1 sigma near 300 Kapproximately 35 S cm-1 from Figure 3a3500 S m-1visual estimate, about +/-5 S cm-1Figure Axis
Approximate
rendered page 4 / article p.2000437-4 · Results and Discussion · Figure 3a
Device 2 sigma near 300 Kapproximately 13 S cm-1 from Figure 3a1300 S m-1visual estimate, about +/-2 S cm-1Figure Axis
Approximate
rendered page 4 / article p.2000437-4 · Results and Discussion · Figure 3a
Device 3 sigma near 300 Kapproximately 3.5 S cm-1 from Figure 3a350 S m-1visual estimate, about +/-0.7 S cm-1Figure Axis
Approximate
rendered page 4 / article p.2000437-4 · Results and Discussion · Figure 3a
Device 4 sigma near 300 Kapproximately 1000 S cm-1 from Figure 3a right axis100000 S m-1visual estimate, about +/-20 S cm-1Figure Axis
Approximate
rendered page 4 / article p.2000437-4 · Results and Discussion · Figure 3a
room-temperature electrical conductivity rangeMarked as a best value within this paperapproximately 5 to 2000 S cm-1 at room temperatureText
Range
rendered page 4 / article p.2000437-4 · Results and Discussion · Figure 3a-b and Table S1
electrical-conductivity temperature-dependence typesDevices 1-3 insulating superlinear; Device 4 weak sublinearCaption
Qualitative
rendered page 4 / article p.2000437-4 · Results and Discussion · Figure 3a

Arrhenius, VRH, conductive-polymer percolation, and granular-electronic-system model comparison

Cu-BHT four-terminal electrical devices 1-4 · Thin Film

SI replots Devices 1-4 in different transport-model coordinates and discusses fit quality.

Geometry
four-terminal Cu-BHT thin-film devices
Context
pristine Cu-BHT thin films
Measurement source
SI text pp.4-6 · V. Analysis of electrical conductivity · Figures S6-S7
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
activation transport fitArrhenius activation transport does not fit the entire temperature rangeText
Qualitative
SI text p.4 · V. Analysis of electrical conductivity · Figure S6a
Device 4 logarithmic temperature dependence above 100 Ksigma vs ln(T) fits better for T > 100 K100 KCaption
Approximate
SI text p.5 · V. Analysis of electrical conductivity · Figure S7
VRH stretched-exponential fit qualitystretched exponential provides reasonable but still imperfect fits for larger alphaText
Qualitative
SI text p.4 · V. Analysis of electrical conductivity · Figure S6c-e

electrical conductivity with tabulated optical/AFM device dimensions

Chip 10 Dev 1 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 2.4 um; width 10.5 um; thickness 60 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Chip 10 Dev 1 room-temperature electrical conductivity497 S cm-149700 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 10 Dev 1 device length2.4 um2.4 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 10 Dev 1 device thickness60 nm60 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 10 Dev 1 device width10.5 um10.5 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

Chip 10 Dev 4 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 2 um; width 4.5 um; thickness 60 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Chip 10 Dev 4 room-temperature electrical conductivity485 S cm-148500 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 10 Dev 4 device length2 um2 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 10 Dev 4 device thickness60 nm60 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 10 Dev 4 device width4.5 um4.5 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

Chip 11 Dev 1 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 2.5 um; width 11.6 um; thickness 60 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Chip 11 Dev 1 room-temperature electrical conductivity62 S cm-16200 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 1 device length2.5 um2.5 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 1 device thickness60 nm60 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 1 device width11.6 um11.6 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

Chip 11 Dev 2 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 2.6 um; width 9.8 um; thickness 70 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Chip 11 Dev 2 room-temperature electrical conductivity56 S cm-15600 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 2 device length2.6 um2.6 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 2 device thickness70 nm70 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 2 device width9.8 um9.8 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

Chip 11 Dev 3 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 2 um; width 8 um; thickness 70 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Chip 11 Dev 3 room-temperature electrical conductivity87 S cm-18700 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 3 device length2 um2 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 3 device thickness70 nm70 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 3 device width8 um8 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

Chip 11 Dev 4 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 2.6 um; width 8.2 um; thickness 70 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Chip 11 Dev 4 room-temperature electrical conductivity73 S cm-17300 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 4 device length2.6 um2.6 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 4 device thickness70 nm70 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Chip 11 Dev 4 device width8.2 um8.2 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

P11_T2 Device 7 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 3 um; width 3.5 um; thickness 100 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
P11_T2 Device 7 room-temperature electrical conductivity1749 S cm-1174900 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P11_T2 Device 7 device length3 um3 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P11_T2 Device 7 device thickness100 nm100 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P11_T2 Device 7 device width3.5 um3.5 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

P11_T2 Device 8 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 3 um; width 3 um; thickness 70 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
P11_T2 Device 8 room-temperature electrical conductivity1505 S cm-1150500 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P11_T2 Device 8 device length3 um3 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P11_T2 Device 8 device thickness70 nm70 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P11_T2 Device 8 device width3 um3 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

P7_T3_1_C25 Device 2 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 1.7 um; width 2.4 um; thickness 70 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
P7_T3_1_C25 Device 2 room-temperature electrical conductivity266 S cm-126600 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P7_T3_1_C25 Device 2 device length1.7 um1.7 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P7_T3_1_C25 Device 2 device thickness70 nm70 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
P7_T3_1_C25 Device 2 device width2.4 um2.4 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

RT sample 2b spot 2 Dev 1 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 1 um; width 3.2 um; thickness 80 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
RT sample 2b spot 2 Dev 1 room-temperature electrical conductivity326 S cm-132600 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
RT sample 2b spot 2 Dev 1 device length1 um1 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
RT sample 2b spot 2 Dev 1 device thickness80 nm80 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
RT sample 2b spot 2 Dev 1 device width3.2 um3.2 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

Sample 1 Dev 2 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 1.8 um; width 6 um; thickness 20 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Sample 1 Dev 2 room-temperature electrical conductivity87.7 S cm-18770 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Sample 1 Dev 2 device length1.8 um1.8 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Sample 1 Dev 2 device thickness20 nm20 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Sample 1 Dev 2 device width6 um6 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1

electrical conductivity with tabulated optical/AFM device dimensions

Sample 3 Dev 1 · Thin Film

Room-temperature conductivity for a Cu-BHT device not shown in the main text; length and width from optical image, thickness from AFM before dry etch.

Temperature
300
Geometry
length 28 um; width 54 um; thickness 400 nm
Context
pristine Cu-BHT thin film
Measurement source
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
PropertyReported valueNormalised valueUncertaintyOrigin and qualitySource
Sample 3 Dev 1 room-temperature electrical conductivityMarked as a best value within this paper2100 S cm-1210000 S m-1SI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Sample 3 Dev 1 device length28 um28 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Sample 3 Dev 1 device thickness400 nm400 nmSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1
Sample 3 Dev 1 device width54 um54 umSI Table
Exact Reported
rendered SI page 11 · V. Analysis of electrical conductivity · Table S1