Application RelevanceSupport assessment: High
The pristine compound 1 thin film forms an Al/compound 1/ITO Schottky barrier diode with enhanced conductivity, rectification ratio, mobility, and carrier concentration under illumination.
Caveat: Light intensity and spectral conditions are not specified in the main text.
2004 · Conclusions · Linked to 11 structured results
Application RelevanceSupport assessment: High
Compound 1 is classified by the authors as a wide-band-gap semiconductor based on a 3.28 eV optical band gap.
Caveat: Optical gap is from a Tauc plot; no uncertainty is reported.
2001 · Optical characterization · Fig. 2 · Linked to 2 structured results
Structure Property LinkSupport assessment: Medium
The authors attribute the material's electrical conductivity and photosensitivity partly to structural flexibility arising from S-S bond formation.
Caveat: The link is an author interpretation; no direct structure-property perturbation experiment is reported.
1998 · Abstract · Linked to 4 structured results
Synthesis MechanismSupport assessment: High
The monomeric 2-mba ligand dimerises in situ through S-S bond formation to generate the 2,2'-dsb linker, producing the zigzag 1D Cd(II) coordination polymer.
Caveat: Supported by SCXRD, IR peak assignments, and SI structural tables; the oxidation medium is described qualitatively without a separate oxidant.
2000 · Structural descriptions · Scheme 1 · Linked to 4 structured results
Transport MechanismSupport assessment: Medium
Forward-bias transport is assigned to ohmic/thermionic behaviour at low bias and SCLC at higher bias.
Caveat: The paper does not tabulate fitted slopes from Fig. 6; mechanism assignment is based on the authors' qualitative region analysis.
2003 · Electrical characterization and photosensitivity · Fig. 6 · Linked to 3 structured results