Measurement evidence
Synthesis of a Cd(ii) based 1D coordination polymer by: In situ ligand generation and fabrication of a photosensitive electronic device · Dutta B., Jana R., Sinha C. et al. · Inorganic Chemistry Frontiers · 2018 · 1998-2005
Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.
Al/compound 1/ITO Schottky barrier diode thin film · Thin Film
Capacitance vs. frequency plot used to estimate dielectric constant for transport-parameter calculations.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|
Al/compound 1/ITO Schottky barrier diode thin film · Thin Film
-2 V to +2 V under dark and light conditions at room temperature.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| conductivity under dark conditions | 6.60 x 10^-4 S m^-1 | 0.00066 S m^-1 | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| conductivity increase after illumination | 1.62 times | — | — | Text Rounded Reported | 2002 · Electrical characterization and photosensitivity |
| conductivity under light conditionsMarked as a best value within this paper | 10.71 x 10^-4 S m^-1 | 0.001071 S m^-1 | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| active film thickness | ~1 um | 0.000001 m | — | Text Approximate | 1999 · Device fabrication and characterization |
| effective diode area | 7.065 x 10^-2 cm2 | 0.000007065 m2 | — | Text Exact Reported | 1999 · Device fabrication and characterization |
| dark current at +2 V from I-V plot | approximately 0.044 A at +2 V | — | — | Visual Estimate Approximate | 2001 · Electrical characterization and photosensitivity · Fig. 4 |
| light current at +2 V from I-V plotMarked as a best value within this paper | approximately 0.066 A at +2 V | — | — | Visual Estimate Approximate | 2001 · Electrical characterization and photosensitivity · Fig. 4 |
| on/off ratio under dark conditions | 45 | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| on/off ratio under light conditionsMarked as a best value within this paper | 65 | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| photosensitivity at +2 VMarked as a best value within this paper | 0.54 at 2 V | — | — | Text Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| rectifying behaviour | device exhibits rectifying behavior characteristic of a Schottky barrier diode | — | — | Text Qualitative | 2002 · Electrical characterization and photosensitivity · Fig. 4 |
| I-V voltage sweep range | -2 V to +2 V | — | — | Text Range | 1999 · Electrical characterization |
Al/compound 1/ITO Schottky barrier diode thin film · Thin Film
Ideality factor, series resistance, and barrier height extracted under dark and light conditions.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| Schottky barrier height under dark conditions | 0.56 eV | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| Schottky barrier height under light conditionsMarked as a best value within this paper | 0.50 eV | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| ideality factor under dark conditions | 1.82 | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| ideality factor under light conditionsMarked as a best value within this paper | 1.58 | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| series resistance from dV/dln I vs. I under dark conditions | 155 ohm | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| series resistance from H(I) vs. I under dark conditions | 144 ohm | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| series resistance from dV/dln I vs. I under light conditionsMarked as a best value within this paper | 101 ohm | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
| series resistance from H(I) vs. I under light conditionsMarked as a best value within this paper | 115 ohm | — | — | Table Exact Reported | 2002 · Electrical characterization and photosensitivity · Table 1 |
Al/compound 1/ITO Schottky barrier diode thin film · Thin Film
Forward-bias I-V curves analysed in low-bias ohmic and high-bias SCLC regions under dark and light conditions.
| Property | Reported value | Normalised value | Uncertainty | Origin and quality | Source |
|---|---|---|---|---|---|
| carrier concentration under dark conditions | 2.86 x 10^-20 eV m^-3 | 2.86e-20 eV m^-3 | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| carrier concentration under light conditionsMarked as a best value within this paper | 3.13 x 10^-20 eV m^-3 | 3.13e-20 eV m^-3 | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| diffusion constant under dark conditions | 2.83 x 10^-6 (S.I.) | 0.00000283 SI (as reported) | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| diffusion constant under light conditionsMarked as a best value within this paper | 4.42 x 10^-6 (S.I.) | 0.00000442 SI (as reported) | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| diffusion length under dark conditions | 443 x 10^-10 m | 4.43e-8 m | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| diffusion length under light conditionsMarked as a best value within this paper | 451 x 10^-10 m | 4.51e-8 m | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| effective charge-carrier mobility under dark conditions | 1.10 x 10^-4 m2 V^-1 s^-1 | 0.00011 m2 V^-1 s^-1 | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| effective charge-carrier mobility under light conditionsMarked as a best value within this paper | 1.71 x 10^-4 m2 V^-1 s^-1 | 0.000171 m2 V^-1 s^-1 | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| mobility-lifetime product under dark conditions | 3.82 x 10^-14 m2 V^-1 | 3.82e-14 m2 V^-1 | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| mobility-lifetime product under light conditionsMarked as a best value within this paper | 3.97 x 10^-14 m2 V^-1 | 3.97e-14 m2 V^-1 | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| charge-transport mechanism assignment | low-bias region ohmic/thermionic emission; high-bias region SCLC with I proportional to V^2 | — | — | Text Qualitative | 2003 · Electrical characterization and photosensitivity · Fig. 6 |
| transit time under dark conditions | 3.47 x 10^-10 s | 3.47e-10 s | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |
| transit time under light conditionsMarked as a best value within this paper | 2.32 x 10^-10 s | 2.32e-10 s | — | Table Exact Reported | 2003 · Electrical characterization and photosensitivity · Table 2 |