Electrical Transport — Conductivity, doping, and redox chemistry of a microporous dithiolene-based metal-organic framework

4 measurement groups · 10 results

Reported values remain attached to the sample, method, conditions, extraction quality and source location that produced them.

Two-point conductivity after air exposure

Electrical conductivity

Air-exposed I2-doped Cu[Ni(pdt)2] film · Thin Film

I2-doped film exposed to air for 12 h, then conductivity noted.

Temperature: room temperature
Atmosphere: air exposure for 12 h
Geometry: Pt IDE on glass
Context: partially de-doped Cu[Ni(pdt)2] film
Measurement source: 2 · Iodine doping

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Conductivity after 12 h air exposure	5 x 10-5 S/cm	—	—	Text Rounded Reported	2 · Iodine doping

In situ two-point conductivity during iodine-vapour doping

Electrical conductivity

I2-doped Cu[Ni(pdt)2] film at 150 degC · Thin Film

Evacuated Cu[Ni(pdt)2] film exposed to iodine vapour at 150 degC; conductivity recorded versus time.

Temperature: 423
Atmosphere: Flowing N2/I2
Geometry: Pt IDE on glass
Context: iodine-doped Cu[Ni(pdt)2] film
Measurement source: 2 · Iodine doping · Figure 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
I2-doped Cu[Ni(pdt)2] conductivity at 150 degC treatment	about 2 x 10-5 S/cm peak from Figure 3 red trace	—	visual estimate from log-axis plot	Figure Axis Approximate	2 · Iodine doping · Figure 3

In situ two-point conductivity during iodine-vapour doping

Electrical conductivity

I2-doped Cu[Ni(pdt)2] film at 50 degC · Thin Film

Evacuated Cu[Ni(pdt)2] film exposed to flowing N2/I2 at 50 degC; conductivity recorded versus time and temperature.

Temperature: 323
Atmosphere: Flowing N2/I2, PI2 = 0.34 torr
Geometry: Pt IDE on glass, 15 um digit spacing, cell constant 0.04 cm-1
Context: iodine-doped Cu[Ni(pdt)2] film
Measurement source: 2 · Iodine doping · Figure 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
I2-doped Cu[Ni(pdt)2] activation energy	Ea = 0.18 eV	—	—	Text Exact Reported	2 · Iodine doping · Figure 3
I2-doped Cu[Ni(pdt)2] conductivity at 50 degC treatmentMarked as a best value within this paper	approximately 1 x 10-4 S/cm	—	approximately	Text Approximate	2 · Iodine doping · Figure 3
Conductivity increase after I2 doping	10^4-fold increase	—	—	Text Rounded Reported	2 · Iodine doping · Figure 3

Two-point conductivity measurement

Electrical conductivity

Cu[Ni(pdt)2] film on Pt interdigitated electrode · Thin Film

Desolvated Cu[Ni(pdt)2] film on Pt IDE; constant current applied and potential recorded; low-temperature measurements under static N2 while cooling at 2 degC/min.

Temperature: room temperature
Atmosphere: N2 or static N2 after desolvation; no air exposure before initial measurement
Geometry: Pt IDE on glass, 15 um digit spacing, cell constant 0.04 cm-1
Context: pristine evacuated Cu[Ni(pdt)2] film
Measurement source: 4 · Doping and Conductivity Measurements · Figure 3

Property	Reported value	Normalised value	Uncertainty	Origin and quality	Source
Cu[Ni(pdt)2] film thickness	on the order of a few microns	—	few microns	Text Approximate	4 · Preparation of Cu[Ni(pdt)2] electrodes
Pt IDE cell constant	0.04 cm-1	—	—	Text Exact Reported	3 · Preparation of Cu[Ni(pdt)2] electrodes
Pt IDE digit spacing	15 um	—	—	Text Exact Reported	3 · Preparation of Cu[Ni(pdt)2] electrodes
Pristine Cu[Ni(pdt)2] activation energy	Ea = 0.49 eV	—	—	Text Exact Reported	1 · Electrical conductivity · Figure 3
Pristine Cu[Ni(pdt)2] room-temperature conductivity	1 x 10-8 S/cm at room temperature	—	—	Text Rounded Reported	1 · Electrical conductivity · Figure 3