Primary studyCore evidenceThermoelectric

Oriented growth of semiconducting TCNQ@Cu3(BTC)2MOF on Cu(OH)2: crystallographic orientation and pattern formation toward semiconducting thin-film devices

Okada K., Mori K., Fukatsu A. et al. · Journal of Materials Chemistry A · 2021 · 19613-19618

3materials
5samples
3synthesis routes
8measurements
25results
6claims and caveats

Evidence map

Open a family to keep every result attached to its sample, method and conditions.

Author interpretations and caveats

Paraphrased for this database from the authors’ stated interpretations — never quoted verbatim — and kept separate from reported measurements.

Application RelevanceSupport assessment: Medium

The oriented TCNQ@Cu3(BTC)2 thin film on flexible polyimide retains broadly similar electrical response under bending to 8.25 mm radius, supporting flexible thin-film device relevance.

Caveat: Bend-test current values are read from plots and no cycling stability data are reported here.

19617 · 2.3 Anisotropic conductivity · Figure 5 · Linked to 3 structured results

Application RelevanceSupport assessment: High

Combining Cu(OH)2-supported epitaxial growth with UV lithography enables oriented Cu3(BTC)2 MOF patterns.

Caveat: Electrical measurements of patterned TCNQ@Cu3(BTC)2 devices are not reported.

19617 · 3 Conclusions · Figure 3; Figure S8 · Linked to 2 structured results

CaveatSupport assessment: Medium

The underlying Cu(OH)2 nanobelt film is not the dominant source of conductivity in the TCNQ@Cu3(BTC)2 device.

Caveat: The text gives a fold difference but not a full calculated Cu(OH)2 conductivity value.

19617 · 2.3 Anisotropic conductivity · Figure S10 · Linked to 2 structured results

Phase AssignmentSupport assessment: High

The oriented Cu3(BTC)2 films have three-dimensional crystallographic orientation, with {111} lattice planes present both parallel and perpendicular to the substrate.

19615 · 2.1 Oriented growth of Cu3(BTC)2 on Cu(OH)2 · Figures 1-2 · Linked to 2 structured results

Synthesis MechanismSupport assessment: High

Cu3(BTC)2 orientation is controlled by both lattice matching and interface bonding/spatial matching of Cu atoms at the Cu3(BTC)2/Cu(OH)2 interface.

Caveat: Cu(OH)2 nanobelt preparation itself is referenced to prior work rather than detailed.

19615 · 2.1 Oriented growth of Cu3(BTC)2 on Cu(OH)2 · Figures S6-S7 · Linked to 4 structured results

Transport MechanismSupport assessment: High

The higher in-plane conductivity of oriented TCNQ@Cu3(BTC)2 arises from alignment of the conductive {111} lattice planes/TCNQ pathways with the measurement direction.

Caveat: Small CuTCNQ-like particulates are observed after TCNQ loading but are reported to be discrete and not expected to contribute to conductivity.

19617 · 2.3 Anisotropic conductivity · Figure 4; Figure S11 · Linked to 3 structured results

Material identities

Names and aliases are kept exactly within the paper’s own identity model.

MaterialCompositionStructure contextSource
Oriented Cu3(BTC)2 thin filmBrowse family: HKUST-1 / Cu₃(BTC)₂Cu3(BTC)2Cu paddlewheel nodes · BTC = 1,3,5-benzenetricarboxylate from H3BTC3D · PristineHKUST-1-type Cu3(BTC)2 grown epitaxially on aligned Cu(OH)2 nanobelts; two orientation relationships reported: [111bar](112)Cu3(BTC)2//[001](010)Cu(OH)2 and [001](110)Cu3(BTC)2//[001](010)Cu(OH)2.19614-19615 · 2.1 Oriented growth of Cu3(BTC)2 on Cu(OH)2 · Figures 1 and 2
Oriented Cu(OH)2 nanobelt filmCu(OH)2Cu in copper hydroxide nanobeltsunknown · UnknownAligned Cu(OH)2 nanobelt film used as epitaxial support and low-conductivity control.2 · Synthesis of Cu3(BTC)2 oriented film
Oriented TCNQ@Cu3(BTC)2 thin filmBrowse family: HKUST-1 / Cu₃(BTC)₂TCNQ@Cu3(BTC)2Cu paddlewheel nodes · BTC framework linker; TCNQ guest = 7,7,8,8-tetracyanoquinodimethane3D · PristineGuest-loaded oriented Cu3(BTC)2 film where the {111} lattice plane/conducting path is present parallel and perpendicular to the substrate.19616 · 2.3 Anisotropic conductivity of the oriented TCNQ@Cu3(BTC)2 film · Figure 4

Sample register

Sample form, processing state and composition status define the context for measurements.

Show 5 sample records
SampleForm and roleProcessing and geometrySource
Cu(OH)2 nanobelt film electrical controlresearch_0373__mat__mat_cuoh2Thin Film · Pristine Control · Unknownoriented Cu(OH)2 nanobelt film before Cu3(BTC)2 conversion or TCNQ loadingpolyimide substrate with Pt electrodes · not reported11 · Figure S10 caption · Figure S10
Three-dimensionally oriented Cu3(BTC)2 thin filmresearch_0373__mat__mat_cu_btcThin Film · Pristine Control · Pristine FrameworkCu(OH)2 nanobelt film converted to Cu3(BTC)2 by immersion in H3BTC ethanol-water solution; washed with ethanol and air-dried.aligned Cu(OH)2 nanobelts on Si, glass or polyimide substrate depending on experiment · ~300 nm19614 · 2.1 Oriented growth of Cu3(BTC)2 on Cu(OH)2 · Figure 1
Oriented Cu3(BTC)2 photolithographic patternsresearch_0373__mat__mat_cu_btcThin Film · Target Sample · Pristine Frameworkphotoresist patterns on Si; Cu(OH)2 oriented film deposited and patterned by acetone sonication; converted to Cu3(BTC)2.Si wafer with UV photoresist-derived patterns and oriented Cu(OH)2 pattern support · not separately reported; based on oriented Cu3(BTC)2 film process19616 · 2.2 Oriented Cu3(BTC)2 patterns · Figure 3
Oriented TCNQ@Cu3(BTC)2 film measured parallel to {111}research_0373__mat__mat_tcnq_cu_btcThin Film · Target Sample · Guest Loadedoriented Cu3(BTC)2 on polyimide desolvated, infiltrated with saturated TCNQ/dichloromethane, washed and air-dried.polyimide substrate with Pt electrodes; orientation chosen so measurement direction is parallel to {111} lattice planes · average film thickness of 300 nm assumed for conductivity calculation19616 · 2.3 Anisotropic conductivity · Figure 4
Oriented TCNQ@Cu3(BTC)2 film measured vertical to {111}research_0373__mat__mat_tcnq_cu_btcThin Film · Target Sample · Guest Loadedoriented Cu3(BTC)2 on polyimide desolvated, infiltrated with saturated TCNQ/dichloromethane, washed and air-dried.polyimide substrate with Pt electrodes; orientation chosen so measurement direction is vertical/perpendicular to {111} lattice planes · average film thickness of 300 nm assumed for conductivity calculation19616 · 2.3 Anisotropic conductivity · Figure 4